• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.340-341
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• 2007

Thin film of ZnO was deposited on various substrate by Nd:YAG Pulsed Laser Deposition(PLD) with a wavelength of 355nm. Further more, Thin filme of ZnO conducted by various temperature conditions. The surface morphology of the ZnO thin film was investigated by X-Ray Diffraction(XRD) and Atomic Force Microscopy(AFM). Effects of various substrates and Temperature conditions were analyzed. The best properties were obtained on $600^{\circ}C$ with post-deposition annealing at $600^{\circ}C$ in flowing $O_2$ atmosphere for several hours.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.106-111
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• 2003

Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia($NH_3$) as precursors at temperature of $250^{\circ}C$, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density$(~11.59 g/\textrm{cm}^3$) and lower carbon(~ 3 atomic %) and oxygen(~ 4 atomic %) concentration of impurities.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.643-650
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• 1994

Highly [100]-oriented MgO thin films were deposited on Si(100) single crystal substrates by reactive RF magnetron sputtering. The effects of substrate temperature, gas pressure, RF input powder, and gas composition on the characteristics of MgO thin films were studied. The higher substrate temperature and the lower operating pressure were, the better crystallinity of the deposited MgO thin films were. The influences of the RF input power and oxygen to argon ratio were very complex. The physical characteristics of the films changed dramatically with deposition conditions. Highly smooth and epitaxial MgO films were obtained at the deposition conditions as follows; subatrate temperature, $600^{\circ}C$; operating pressure, 10 mtorr; RF input power density, 2 W/$\textrm{cm}^2$; the percentage of oxygen, 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.109-115
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• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.16-23
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• 1999

Deposition of parylene (PA) films has been explored at substrate temperatures below 2$0^{\circ}C$ and pressures below 4 torr. The film thickness was measured using AFM and the film thickness measured was 3,500-12,000$\AA$ and the growth rate was 20-70$\AA$/min. T도 dielectric constant of the deposited PA films was found to be 2.66 and the dielectric strength was in excess of 2$\times$105V/cm. The growth rate became a maximum at a precursor decomposition temperature of $600^{\circ}C$. It was found that the growth rate decreased with increasing substrate temperature, whereas it increased with increasing pressure. At a precursor decomposition temperature of 75$0^{\circ}C$ or at a deposition pressure above 1 Torr the film surface became rough due to particle formation in the gas phase. The condensation of a p-xylylene monomer on the substrate surface turned out to be a rate-limiting step in the growth of the PA films.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.