• Journal of Environmental Health Sciences
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• v.29 no.4
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• pp.10-16
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• 2003

Atmospheric samples were conducted from September 2001 to July 2002 with GPS-l PUF sampler in rural site to concentration distributions of gas/particle PCBs and to calculate dry deposition flux of PCBs. $\Sigma$PCBs concentrations of gas/particle PCBs were 59.29$\pm$48.83, 6.56$\pm$6.59 pg/㎥, respectively. Gas contribution (%) of total PCBs (gas + particle) was 90% which existed gas phase in the atmosphere. The particle contribution (%) of PCB congeners increased relatively more of the less volatile congeners with the highest chlorine number. The correlation coefficients (r) between total PCBs and temperature ($^{\circ}C$) showed negative correlation in - 0.62 (p<0.0l) for particle phase, positive correlation in 0.63 (p<0.01) for gas phase. In other word, particle phase PCBs is enriched in colder weather which could be due to greater in corporation of condensed gas phase at low temperature. The calculated dry deposition of total PCBs (gas + particle) was 0.008, 0.008 $\mu\textrm{g}$ $m^{-2}$ da $y^{-l}$ which showed maximum dry deposition flux in December, minimum data in July Bs in the atmosphere. The calculated dry deposition fluxes of total PCBs were influenced by particle phase PCBs even though PCBs in the atmosphere were present primarily in the gas phase.e.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.169-174
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• 2007

TRISO coated fuel particle is one of the most important materials for hydrogen production using HTGR (high temperature gas cooled reactors). It is composed of three isotropic layers: inner pyrolytic carbon (IPyC), silicon carbide (SiC), outer pyrolytic carbon (OPyC) layers. In this study, TRISO coated fuel particle layers were deposited through CVD process in a horizontal hot wall deposition system. Also the computational simulations of input gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variable (i.e temperature and input gas ratios). As deposition temperature increased, microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation showed that the change of reactant states affected growth rate at each position of the susceptor. The experimental results showed a close correlation with the simulation results.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.84.1-84.1
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• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.1996-2000
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• 2008

In autothermal reforming reaction, oxygen to carbon ratio (OCR) and steam to carbon ratio (SCR) are significant factors, which control temperature and carbon deposition into the reactor. The OCR is more sensitive than the SCR to affect the temperature distribution and reforming efficiency. In conventional operation, hydrocarbon fuel, steam, and oxygen was homogeneously mixed and injected into the reactor in order to get hydrogen-rich gas. The temperature was abruptly raised due to fast oxidation reaction in the former part of the reactor. Deactivation of packed catalysts can be accelerated there. In the present study, therefore, the effect of the oxygen distribution is introduced and investigated to suppress the carbon deposition and to maintain the reactor in the mild operating temperature (e.g., $700{\sim}800^{\circ}C$). In order to investigate the effect numerically, the following models are adopted; heterogeneous reaction model and two-medium model for heat balance.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.4
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• pp.437-444
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• 2012

This paper describes the experimental characteristics on cooling and heating performance of the coil deposition type heat pump using geothermal energy to optimize the design for the operating parameters of this system. The operating parameters considered in this study include subcooling degree, evaporation and condensation temperature in the coil deposition type heat pump using geothermal energy. The main results are summarized as follows : As the evaporation temperature and subcooling degree of the coil deposition type heat pump using geothermal energy increases, and the condensation temperature decreases, the COP of this system increases. The subcooling degree, evaporation and condensation temperature of the coil deposition type heat pump have an effect on cooling and heating COP of this heat pump. Therefore, it is a necessary to determine the optimum operation conditions for the highest COP of this heat pump presented in this study.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.