• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.362-364
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• 2001

The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.561-564
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• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.367-370
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• 2000

In this study, thin films of 70/30 and 80/20 mol% P(VDF-TrFE) copolymers were fabricated by physical vapor deposition method. In order to determine the optimum deposition condition, the copolymer thin films were fabricated in the heating temperature of 260$^{\circ}C$, 280$^{\circ}C$, and 300$^{\circ}C$. The deposition rate was measured in a real time by thickness monitor. The surface image of prepared thin films was analyzed by using AFM. From the results of TG-DTA,70/30 and 80/20 mol% P(VDF-TrFE) copolymers were observed the Curie transition point below the melting point. As the results of AFM and FT-IR analysis, we determined that the optimum deposition temperature was 300$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.224-227
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• 1999

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.162-164
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• 2004

Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.127-142
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• 2000

The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

• 한국환경과학회지
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• 제15권2호
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• pp.121-131
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• 2006

Atmospheric bulk (wet and dry) samples were monthly collected in Masan and Heangam areas of Korea, to assess the deposition flux and seasonal variation of polycyclic aromatic hydrocarbons (PAHs). Deposition fluxes of PAHs in bulk samples were determined using gas chromatography coupled to mass spectrometer detector (GC/MSD). Particle deposition fluxes from Masan and Haengam areas varied from 13 to $87\;g/m^2/year$ and from 5 to $52\;g/m^2/year$, respectively. PAHs deposition fluxes in atmospheric bulk samples in Masan and Haengam areas ranged from 135 to $464\;{\mu}g/m^2/year$ and from 62.2 to $194\;{\mu}g/m^2/year$, respectively. Atmospheric deposition fluxes of particles and PAHs in this study were comparable to or slightly lower values than those from different locations in Korea and other countries. PAHs profiles of atmospheric deposition bulk samples showed slightly different from two sampling areas, however the predominant species of PAHs were similar. Indeno (1,2,3-c,d)pyrene, benzo(g,h,i)perylene, phenanthrene compounds were the most detected PAHs in deposition bulk samples. Carcinogenic PAHs occupied the contribution of approximately $30-40\%$ of the total PAHs deposition fluxes. The non-metric multi-dimensional scaling (MDS) was used, to assess the differentiation of PAHs source between two sampling areas. The result suggests that PAHs contamination sources were different according to the location and season surveyed. There was no an apparent relationship between the PAHs deposition flux against temperature and rainfall amount, even though summer season with the highest temperature and the largest amount of precipitation showed the lowest PAHs deposition flux. Benzo(e)pyrene/benzo(a)pyrene ratio indicated that the photo-degradation process was one of important factors to the seasonal variation of PAHs with the lower deposition fluxes.

• 대한기계학회논문집
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• 제19권5호
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• pp.1319-1332
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• 1995

Numerical analysis was performed to characterize the particle deposition behavior on a horizontal free-standing wafer with thermophoretic effect under the turbulent flow field. A low Reynolds number k-.epsilon. turbulence model was used to analyze the turbulent flow field around the wafer, and the temperature field for the calculation of the thermophoretic effect was predicted from the energy equation introducing the eddy diffusivity concept. The deposition mechanisms considered were convection, diffusion, sedimentation, turbulence and thermophoresis. For both the upper and lower surfaces of the wafer, the averaged particle deposition velocities and their radial distributions were calculated and compared with the laminar flow results and available experimental data. It was shown by the calculated averaged particle deposition velocities on the upper surface of the wafer that the deposition-free zone, where the deposition velocite is lower than 10$^{-5}$ cm/s, exists between 0.096 .mu.m and 1.6 .mu.m through the influence of thermophoresis with positive temperature difference of 10 K between the wafer and the ambient air. As for the calsulated local deposition velocities, for small particle sizes d$_{p}$<0.05 .mu.m, the deposition velocity is higher at the center of the wafer than at the wafer edge, whereas for particle size of d$_{p}$ = 2.0 .mu.m the deposition takes place mainly on the inside area of the wafer. Finally, an approximate model for calculating the deposition velocities was recommended and the calculated deposition velocity results were compared with the present numerical solutions, those of Schmidt et al.'s model and the experimental data of Opiolka et al.. It is shown by the comparison that the results of the recommended model agree better with the numerical solutions and Opiolka et al.'s data than those of Schmidt's simple model.