• IMMUNE NETWORK
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• v.24 no.2
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• pp.17.1-17.16
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• 2024

We have reported that anterior cruciate ligament (ACL) injury leads to the differential dysregulation of the complement system in the synovium as compared to meniscus tear (MT) and proposed this as a mechanism for a greater post-injury prevalence of post traumatic osteoarthritis (PTOA). To explore additional roles of complement proteins and regulators, we determined the presence of decay-accelerating factor (DAF), C5b, and membrane attack complexes (MACs, C5b-9) in discarded surgical synovial tissue (DSST) collected during arthroscopic ACL reconstructive surgery, MT-related meniscectomy, osteoarthritis (OA)-related knee replacement surgery and normal controls. Multiplexed immunohistochemistry was used to detect and quantify complement proteins. To explore the involvement of body mass index (BMI), after these 2 injuries, we examined correlations among DAF, C5b, MAC and BMI. Using these approaches, we found that synovial cells after ACL injury expressed a significantly lower level of DAF as compared to MT (p<0.049). In contrast, C5b staining synovial cells were significantly higher after ACL injury (p<0.0009) and in OA DSST (p<0.039) compared to MT. Interestingly, there were significantly positive correlations between DAF & C5b (r=0.75, p<0.018) and DAF & C5b (r=0.64 p<0.022) after ACL injury and MT, respectively. The data support that DAF, which should normally dampen C5b deposition due to its regulatory activities on C3/C5 convertases, does not appear to exhibit that function in inflamed synovia following either ACL injury or MT. Ineffective DAF regulation may be an additional mechanism by which relatively uncontrolled complement activation damages tissue in these injury states.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.641-646
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• 2001

The $CoSi_2$ layers have been in-situ grown on undoped poly-Si by the reactive chemical vapor deposition of $Co({\Eta}^5-C_5H_5)(CO)_2$ at $650^{\circ}C$ and their thermal stabilities have been investigated in the temperature range of 800 to $1000^{\circ}C$. The $CoSi_2$ layer grown by the in-situ method had grains with large area of (111) plane, while grains with little area of (111) plane appeared on the $CoSi_2$ layer grown by the conventional two-step method where $CoSi_2$ formed first and transformed to $CoSi_2$. The thermal stability of the $CoSi_2$ layer grown by the in- situ process was improved by more than $100^{\circ}C$ higher than that of the $CoSi_2$ layer grown by the conventional two-step process. The $CoSi_2$ layer grown in situ on a large-grained Poly-Si was stable up to $950^{\circ}C$. The effect of stability improvement by the in situ growth was more pronounced when the grain sizes of the poly-Si substrate were small. The improved thermal stability of the in-situ grown $CoSi_2$ layer could be mainly due to the formation of a uniform $CoSi_2$ layer with the $CoSi_2$ grains, which are in the form of epitaxial-like growth on the each poly-Si grains, causing a reduction of the interfacial energy of the system.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.6 no.3
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• pp.217-224
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• 2008

In deep geological disposal system, the integrity of a disposal canister having spent fuels is very important factor to assure the safety of the repository system. This disposal canister is one element of the engineered barriers to isolate and to delay the radioactivity release from human beings and the environment for a long time so that the toxicity does not affect the environment. The main requirement in designing the deep geological disposal system is to keep the buffer temperature below 100$^{\circ}C$ by the decay heat from the spent fuels in the canister in order to maintain the integrity of the buffer material. Also, the disposal canister can endure the hydraulic pressure in the depth of 500 m and the swelling pressure of the bentonite as a buffer. In this study, new concept of the disposal canister for the CANDU spent fuels which were considered to be disposed without any treatment was developed and the thermal stability and the structural integrity of the canister were analysed. The result of the thermal analysis showed that the temperature of the buffer was 88.9$^{\circ}C$ when 37 years have passed after emplacement of the canister and the spacings of the disposal tunnel and the deposition holes were 40 m and 3 m, respectively. In the case of structural analysis, the result showed that the safety factors of the normal and the extreme environment were 2.9 and 1.33, respectively. So, these results reveal that the canister meets the thermal and the structural requirements in the deep geological disposal system.

• Ocean and Polar Research
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• v.26 no.3
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• pp.385-400
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• 2004

The Lago Sofia Conglomerate encased in the 2km thick hemipelagic mudstones and thinbedded turbidites of the Cretaceous Cerro Toro Formation, southern Chile, is a deposit of a gigantic submarine channel developed along a foredeep trough. It is hundreds of meters thick kilometers wide, and extends for more than 120km from north to south, representing one of the largest ancient submarine channels in the world. The channel deposits consist of four major facies, including stratified conglomerates (Facies A), massive or graded conglomerates (Facies B), normally graded conglomerates with intraformational megaclasts (Facies C), and thick-bedded massive sandstones (Facies D). Conglomerates of Facies A and B show laterally inclined stratification, foreset stratification, and hollow-fill structures, reminiscent of terrestrial fluvial deposits and are suggestive of highly competent gravelly turbidity currents. Facies C conglomerates are interpreted as deposits of composite or multiphase debris flows associated with preceding hyperconcentrated flows. Facies D sandstones indicate rapidly dissipating, sand-rich turbidity currents. The Lago Sofia Conglomerate occurs as isolated channel-fill bodies in the northern part of the study area, generally less than 100m thick, composed mainly of Facies C conglomerates and intercalated between much thicker fine-grained deposits. Paleocurrent data indicate sediment transport to the east and southeast. They are interpreted to represent tributaries of a larger submarine channel system, which joined to form a trunk channel to the south. The conglomerate in the southern part is more than 300 m thick, composed of subequal proportions of Facies A, B, and C conglomerates, and overlain by hundreds of m-thick turbidite sandstones (Facies D) with scarce intervening fine-grained deposits. It is interpreted as vertically stacked and interconnected channel bodies formed by a trunk channel confined along the axis of the foredeep trough. The channel bodies in the southern part are classified into 5 architectural elements on the basis of large-scale bed geometry and sedimentary facies: (1) stacked sheets, indicative of bedload deposition by turbidity currents and typical of broad gravel bars in terrestrial gravelly braided rivers, (2) laterally-inclined strata, suggestive of lateral accretion with respect to paleocurrent direction and related to spiral flows in curved channel segments around bars, (3) foreset strata, interpreted as the deposits of targe gravel dunes that have migrated downstream under quasi-steady turbidity currents, (4) hollow fills, which are filling thalwegs, minor channels, and local scours, and (5) mass-flow deposits of Facies C. The stacked sheets, laterally inclined strata, and hollow fills are laterally transitional to one another, reflecting juxtaposed geomorphic units of deep-sea channel systems. It is noticeable that the channel bodies in the southern part are of feet stacked toward the east, indicating eastward migration of the channel thalwegs. The laterally inclined strata also dip dominantly to the east. These features suggest that the trunk channel of the Lago Sofia submarine channel system gradually migrated eastward. The eastward channel migration is Interpreted to be due to tectonic forcing imposed by the subduction of an oceanic plate beneath the Andean Cordillera just to the west of the Lago Sofia submarine channel.

• Journal of Periodontal and Implant Science
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• v.24 no.1
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• pp.131-143
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• 1994

For maintenance of exposed implant in healthy state, it is necessary to treat the surface of implant fixture and provide the surface adjustable to surrounding tissues. Variable techniques have been introduced such as citric acid and air-abrasive system to treat the failed implant. Although when the rough surface of HA coated implant was exposed to oral environment, the surface treatment method with citric acid or air-abrasive system is effective for removal of bacterial endotoxin, it is unsuccessful to prevent plaque deposition due to difficulty in removal of rough surface of HA coated implant. Thus, in this study the method that removes bacterial endotoxin and makes smooch surface without alteration of surface characteristics was studied. HA coated disc manufactured by IMZ Co. Was treated with high speed diamond bur, low speed diamond bur, stone bur, rubber point, jetpolisher. And then its surface state was examined with profilometer and SEM to evaluate the surface smoothness, and its surface component was analyzed with EDX to evaluate wheter the surface characteristics were altered or not. As a result, following results were obtained. When the surface roughness of each implant disc was measured by profilometer, the group I showed a $R_{max}\;2.11{\mu}m$ and the group II, III, IV, V showed a $R_{max2}\;4.17{\mu}m$, $7.28{\mu}m$, $8.61{\mu}m$ and $39.44{\mu}m$ respectively. That is, surface smoothness was highest in the group I and it has been gradually decreased in the group II, III, IV and V. Under the SEM examination, the group I showed relatively smooth surface and the group II showed slightly rougher surface than the group I due to partially remaining HA particles while most HA particle was removed. The group III and IV showed rough topography due to HA particles that was not grinded, and HA coated surface in group V showed very irregular surface with deep groove and prominence. In cross-sectional view, the group I showed uniform surface, and the group III, IV showed rough surface due to remaining HA particles but the thickness of HA coating was remarkably reduced. The group II has similar pattern in group I, and the group V showed about $40{\mu}m$ thickness although it was not constant. By analysis of surface component with EDX, the group II in which the grinding was effective showed a small quantity of calcium and phosphorous and the group III, IV, in which the grinding was incomplete showed calcium and phosphorus peak. In all experimental group, no other than titanium, aluminum, calcium, phosphorus was observed.

• Economic and Environmental Geology
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• v.15 no.2
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• pp.65-88
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• 1982

In the last ten years, marine geological and geophysical survey and research were conducted by Japanese, Russian and American scientists in the East Sea of Korea (Japan Sea). Many research results were published. However, regional research of the geology of the continental margin of the Korean Peninsula was not conducted. This study has made on attempt to classify submarine strata and stratigraphic boundaries. The study has revealed characters of submarine geology and structure. Isopach maps of each identified stratigraphic unit have been constructed as the results of this study. The study was conducted on the basis of analyses of marine seismic surveys carried out in the continental margin of the East Sea between Kangneung and Pohang. Three depositional basins were identified in the study area and they were named as, Mukho Basin, Hupo Basin and Pohang Basin. The Mukho Basin is developed in continental slope and shelf in the area between Kangneung and Samcheog. Quaternary and Pliocene sediments attain a maximum thickness of 900 m. Basement rocks are interpreted as granite and gneiss. They are correlated with granite-gneiss of the Taebaecksan Series of Pre-cambrian age and the Daebo granite of Jurassic age. The Hupo Basin is developed in the continental shelf between Uljin and Youngdeok. Quaternary and Pliocene sediments attain a maximum thickness of 600 m. Basement rocks were interpreted as granite and gneiss and they are correlated with metamorphic rocks of Pre-cambrian age and the Daebo granites, comprising the Ryongnam Massif. The Pohang Basin is developed in the area between Pohang and Gangu. This basin contains Miocene and older sediments. Basement rocks are not shown. Many faults are developed within the continental shelf and slope. These faults strike parallel with the coast line. A north-south direction is predominant in the southern study area. However, in the northern study area the faults strike north, and north-west. The faults are parallel to each other and are step faults down-thrown to the east or west, forming horst and graben structures which develop into sedimentary basins. Such faults caused the development of submarine banks along the boundary between the continental shelf and slope. This bank has acted as a barrier for deposition in the Hupo Basin. Paleozoic sedimentary rocks distributed widely in the adjacent land area are absent in the Mukho Basin. This suggests that the area of the basin was situated above the sea level until the Pliocene time. The study area contains Pliocene sediments in general. These sediments overlie the basement complex composed of metamorphic rocks, granites, Cretaceous (Kyongsang System) sedimentary rocks and Miocene sedimentary rocks. These facts lead to a conclusion that the continental shelf and slope of the study area were developed as a result of displacements along faults oriented parallel to the present coast line in the post Miocene time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.