• 한국표면공학회지
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• 제21권3호
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• pp.114-129
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• 1988

The principles of the physical vapour deposition processes(PVC); evaporation, sputting, and ion plating are presented and compared with each other with respect to coating properties, deposition rate and process control. The significance of coating sources and vacuum equipment for hard materials coating is discussed.

• 한국대기환경학회지
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• 제16권6호
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• pp.675-684
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• 2000

A novel dry and wet deposition collector, which can overcome the several problems such as water evaporation cartridge cracks and high costs founded in the previous collector systems, has been constructed. ENVI-18 SPE adsorption cartridge has been used to measure atmospheric deposition of polycylic aromatic hydrocarbons (PAHs). A surrogate surface, consisted of water and methanol, was filled in the dry deposition funnel to simulate dry deposition onto water surface. A water supply system in order to compensat evaporation of the surrogate surface was used and it was consisted of a piston pump, a tubing pump, a overflow tube and a chamber system. A novel water vaporizing system to supply water onto the wet SPE cartridge system with a constant flow rate was developed. The novel water vaporizing system, consisted of a vacuum pump, a water supply reserviour and tube and a mini space heater, could prevent the PAHs adsorption cartridge cracks occurred in the previous collector and effectively adsorb PAHs. The novel dry and wet deposition collector showed a good adsorption, desorption, and recovery rates of PAHs. By reducing the number of pumps used and employing polypyopylene (PP) instead of teflon as a material of collection funnel, the total construction costs were much reduced as compared with the previous dry and wet deposition collectors.

• 한국표면공학회지
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• 제47권6호
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• pp.303-310
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• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• 한국생산제조학회지
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• 제26권1호
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• pp.44-49
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• 2017

Titanium has been used in various fields due to its good corrosion and erosion resistance, and superior mechanical properties. The process for selective electro-deposition on a titanium surface using laser beam is proposed in this paper. The process consists of laser irradiation, electro-deposition, and ultrasonic cleaning. Laser irradiation can change the surface morphology of titanium. Through laser irradiation, the surface cleaning effect and a rough surface can be achieved. The surface roughness of titanium was measured according to the laser beam conditions. The characteristics of selective electro-deposition on titanium surface according to surface roughness are investigated by various analytical methods such as SEM, and EDS.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 한국세라믹학회지
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• 제37권2호
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• 한국표면공학회지
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• 제50권2호
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• pp.72-84
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• 2017

In this work, electrophoretic paint (E-paint) was deposited on AZ31 Mg alloy after four different surface pretreatments: knife abrading, SiC paper abrading, deionized (DI) water immersion and NaOH immersion. The deposition process of E-paint was studied by analyses of voltage-time and current-time curves, amount of deposited paint, current efficiency and surface oxide film resistance and the adhesion of E-paint was examined by tape test before and after immersion in DI water for 500 h at $40$^{\circ}C$. It was found that the induction time for the deposition, the amount of deposited paint and the current efficiency are inversely proportional to the resistances of surface films prepared by different surface pretreatment methods. The electrophoretic painting showed longer inductance time, larger amount of deposited paint and higher current efficiency on the highly conducting surfaces, such as knife-abraded and SiC-abraded surfaces than on the less conducting surfaces, such as DI water-immersed and NaOH-immersed samples. Excellent adhesion was observed on the E-paintings deposited onto knife-abraded and SiC-abraded AZ31 Mg alloy samplesSiC-abraded AZ31 Mg alloy samples.

• Asian Journal of Atmospheric Environment
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• 제11권4호
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• pp.270-282
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• 2017

To evaluate the deposition amount on a ground surface, mesoscale numerical models coupled with atmospheric chemistry are widely used for larger horizontal domains ranging from a few to several hundreds of kilometers; however, these models are rarely applied to high-resolution simulations. In this study, the performance of a dry and wet deposition model is investigated to estimate the amount of deposition via computational fluid dynamics (CFD) models with high grid resolution. Reynolds-averaged Navier-Stokes (RANS) simulations are implemented for a cone and a two-dimensional ridge to estimate the dry deposition rate, and a constant deposition velocity is used to obtain the dry deposition flux. The results show that the dry deposition rate of RANS generally corresponds to that observed in wind-tunnel experiments. For the wet deposition model, the transport equation of a new scalar concentration scavenged by rain droplets is developed and used instead of the scalar concentration scavenged by raindrops falling to the ground surface just below the scavenging point, which is normally used in mesoscale numerical models. A sensitivity analysis of the proposed wet deposition procedure is implemented. The result indicates the applicability of RANS for high-resolution grids considering the effect of terrains on the wet deposition.

• 한국기계가공학회지
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• 제7권1호
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• pp.67-74
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• 2008

In this paper, the surface characteristics of the AIP-TiN coated of the SKH51 and SKD11 steels under various deposition times are presented with emphasis on the comparison of the two materials. The micro-particle, the surface roughness, the micro-hardness, the coated layer thickness, the atomic distribution of Ti, N and Fe elements and the adhesion are measured for various deposition times. It has been shown that the micro-particle, the surface roughness, the coated layer thickness and the atomic distribution of Ti, N and Fe elements are similar for the two cases regardless of the test deposition time from 10 to 180 minutes. However, it has been shown that the micro-hardness and the adhesion of the SKH51 steel are higher than the SKD11 steel, indicating that they are much affected by the hardness of the material to be coated.

• 한국표면공학회지
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• 제29권5호
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.