• 한국기계가공학회지
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• 제14권1호
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• pp.92-97
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• 2015

The design of the glass-carrier was studied using simulations of the temperature distribution of an ITO deposition inline-sputter process. The temperature distribution was simulated in Heating Chamber 7, and in the ITO Deposition Chambers 8 and 9. The temperature distribution of the glass sheets was low in both the lower and upper lines. Moreover, it was observed that the temperature in Chamber 8 significantly affected the temperature in Chamber 9, and that the latter was hotter. The rear of the chambers were subjected to more heating than the fronts, so the temperature range at the back was wider. Redesigning the shape of the carrier made it possible to load more glass sheets on the glass carrier, and to make deposits on the ITO glass at higher temperature, over a wider area.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.145-148
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• 2006

Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold gas dynamic spray is conducted by powder sprayed by supersonic gas jet, and generally called the kinetic spray or cold-spray. Cold-spray was developed in Russia in the early 1980s to overcome the defect of thermal spray method. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but our research team tried to apply this method to macro scale deposition. The macro scale deposition causes deformation of a thin substrate which is usually convex to the deposited side. In this research, the main cause of the deformation was investigated using 6061-T6 aluminum alloy and properties of deposited aluminum layer such as coefficient of thermal expansion, Elastic modulus, hardness, electric conductivity were measured. From the result of the analysis, it was concluded that compressive residual stress was the main reason of substrate deformation while CTE had little effect.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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• pp.113-115
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• 2003

Droplet impinging into a cavity at micro-scale is one of important fluidic issues for microfabrications, e.g. bio-chip applications and inkjet deposition processes in the PLED panel manufacturing. The droplets generally dispensing from an inkjet head, which contains an array of nozzles, have a volume in several picoliters, while each nozzle jets the droplets into cavities with micron-meter size located on substrates. Due to measurement difficulties at micro-scale, the numerical simulation could serve as an efficient and preliminary way to evaluate the micro-sized droplet impinging behavior into a cavity. The micro-fluidic flow is computed by solving the three-dimensional Navier-Stokes equations through a finite volume discretization. The droplet front is predicted by a volume-of-fluid approach, in which the surface tension is modeled as a function of the fluid concentration. This paper discusses the influence of fluid properties, such as surface tension and fluid viscosity, on micro-fluidic characteristics at different jetting speeds in the deposition process via the proposed numerical approach.

• 대한기계학회논문집A
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• 제24권8호
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• pp.1958-1967
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• 2000

Rapid Prototyping( RP ) has been increasingly applied in the process of design and development of new products. RP can shrink the time and expense required to bring a new product from initial concept to production. However, the necessity of using RP for short-run manufacturing is continuously driving a development of a cost-effective technique that will produce completely-finished quality parts in a very short time. To meet these demands, the improvements in production speed, accuracy materials, and cost are crucial. Thus, a new hybrid-RP system performing both deposition and machining in a station is proposed in this paper. It incorporates both material deposition in layers and material removal from the outer surface of the layer to produce the required surface finish. The new hybrid-RP system can dramatically reduce the total build time and fabricate largo-sized and freeform objects because it uses very thick layers, i.e.

• 센서학회지
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• 제14권6호
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• pp.423-429
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• 2005

In this paper, we proposed the fabrication process of the stable e-beam evaporation and the patterning of metals layer on the polydimethylsiloxane (PDMS) substrate. The metal layer was deposited under the various deposition rate, and its effect to the electrical and mechanical properties (e.g.: adhesion-strength of metal layer) was investigated. The influence of surface roughness to the adhesion-strength was also examined via the tape test. Here, we varied the roughness by changing the reactive ion etching (RIE) duration. The electrode patterning was performed through the conventional photolithography and chemical etching process after e-beam deposition of $200{\AA}$ Ti and $1000{\AA}$ Au. As a result, the adhesion strength of metal layer on the PDMS surface was greatly improved by the oxygen plasma treatment. The e-beam evaporation on the PDMS surface is known to create the wavy topography. Here, we found that such wavy patterns do not effect to the electrical and mechanical properties. In conclusion, the metal patterns with minimum $20{\mu}m$ line width was produced well via the our fabrication process, and its electrical conductance was almost similar to the that of metal patterns on the silicon or glass substrates.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.160-160
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• 2011

In the present work, $TiO_2$ fiilms supported by porous silica gel with high surface area synthesized by atomic layer deposition(ALD). Porous structure of silica substrate could be maintained even after deposit large amount of $TiO_2$ (500 cycles of ALD process), suggesting the differential growth mode of $TiO_2$ on top surface and inside the pore. All the $TiO_2$-covered silica samples showed improved MB adsorption abilities, comparing to bare one. In addition, when silica surface was covered with $TiO_2$ films, MB adsorption capacity was almost fully recovered by re-annealing process (500$^{\circ}C$, for 1 hr, in ambient pressure), whereas MB adsorption capacity of bare silica was decreased after re-heaing process. FT-IR study demonstrated that $TiO_2$ film could prevent deposition of surface-bound intermediate species during thermal decomposition of adsorbed MB molecules. Photocatalytic activity of $TiO_2$/silica sample was also investigated.

• 한국재료학회지
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• 제14권6호
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• pp.443-450
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• 2004

Parylene polymer thin film shows excellent homogeneous coverage chracteristics when it was deposited onto very complex three dimensional solid matters, such as deep hole and micro crack. The parylene deposition process can be conducted at room temperature although most of chemical vapor deposition processes request relatively high processing temperature. Therefore, the parylene coating process does not induce any thermal problems. Parylene thin film is transparent and has extremly high chemical stability. For example, it shows high chemical stability with high reactive chemical solutions such as strong acid, strong alkali and acetone. The bio-stability of this material gives good chances to use for a packaging of biomedical devices and electronic devices such as display. In this review article, principle of deposition process, properties and application fields of parylene polymer thin film are introduced.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.675-675
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• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.