• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.567-572
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• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.37 no.3
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• pp.1-8
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• 2005

Increase in the utilization rate of recycled paper and closing level of papermaking system increased the problem associated with stickies that include decrease in process runnability and product quality. It is required to establish a process for removing the micro stickies to solve the problems associated with stickies. In this study, the application of flotation process as a method to remove micro stickies was examined. Model micro stickies (MMS) were prepared using microcrystalline cellulose (MCC) and pressure sensitive adhesives (PSA), and the influence of three nonionic surfactants on the removal efficiency of MMS from flotation process was examined. Also the effect of surfactants on the deposition of micro stickies that remaining in the papermaking wet end onto wire was examined. Removal efficiency of MMS by flotation was increased when the proportion of nonionic surfactant with propylene oxide (PO) type hydrophilic tail was increased and stock pH was 7. It was suggested that this nonionic surfactant minimized the increase of surface energy of hydrophobic MMS. The MMS with high hydrophobicity remaining in the papermaking system, however, would cause more serious deposition problems on papermaking wet end. Therefore, it is of great importance to increase the removal efficiency of MMS in flotation process for the prevention of papermaking system contamination caused by stickies deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.128-131
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• 2004

In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.6
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• pp.50-59
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• 2022

The design of the substrate significantly affects the thermal history and the residual stress formation in the vicinity of a repaired region by a directed energy deposition (DED) process. The occurrence of defects in the repaired region depends on the thermal history and residual stress formation. The objective of this study was to investigate the influence of the inclined angle and depth of the substrate on the thermal and residual stress characteristics in the vicinity of a repaired region by a DED process through two-dimensional finite element analyses (FEAs). The temperature and residual stress distributions in the vicinity of the repaired region were predicted according to the combination of the inclined angle and depth of the substrate. The effects of the inclined angle and depth on the depth of the heat affected zone and the maximum value of the residual stress were examined. A proper combination of the inclined angle and depth of the substrate was estimated to decrease the residual stress in the vicinity of the repaired region.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.850-855
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• 2002

Silica powders were prepared from $SiCl_4$-$H_2$O system by chemical vapor deposition process, and investigated on size control of the products with reaction conditions. The products were amorphous and nearly spherical particles with 130nm~50nm in size. The size distribution became narrow with the increase of [$H_2$O]/[SiCl$_4$] concentration ratio. The particle size decreased with the increase of reaction temperature, [$H_2$O]/[SiCl$_4$] concentration ratio and total flow rate. The specific surface area measured by BET method was about three times larger than that of electron microscope method.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.7-11
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• 1997

SiC/C functionally gradient material (FGMs) were formed on graphite substrates by hot-wall chemical vapor deposition (CVD) technique using the SiCl$_4$-C$_3$H8-H$_2$ chemistry. Thermochemical equilibrium calculations were carried out to investigate the deposition process. The effect of process variables on the deposition yield and the SiC/C ratio in deposited layers was studied in detail. Calculated results showed a reasonable agreement with the experiment in a qualitative sense. SiC/C FGMs with excellent mechanical and thermal properties could be successfully formed on graphite substrates by carefully controlling the compositions in the deposited layers.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.53-66
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• 1992

Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.