• Journal of the Korean Geotechnical Society
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• v.23 no.4
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• pp.5-13
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• 2007

Many construction projects adopt grouting technology to prevent the leakage of groundwater or to improve the shear strength of the ground. Recognition as a feasible field procedure dates back to 1925. Since then, developments and field use have increased rapidly. According to improvement of grout materials, theoretical study on grout penetration characteristics is demanded. Fluid of grout always tends to flow from higher hydraulic potential to lower one and the motion of grout is also a function of formation permeability. Viscosity of pout is changed by chemical action while grout moves through pores. Due to the increment of viscosity, permeability is decreased. Permeability is also reduced by grout particle deposits to the soil aggregates. In this paper, characteristics of new cement grout material that has been developed recently are studied: injectable volume of new grout material is tested in two different grain sizes of sands; and the method to calculate injectable volume of grout Is suggested with consideration of change in viscosity and clogging phenomena. The calculated values are compared with injection test results. Viscosity of new grout material is found to increase as an exponential function of time. And lumped parameter $\delta$ of new grout material to be used for assessing deposition characteristics is estimated by comparing deposit theory with injection test results considering different soil types and different injection pressures. Injection test results show that grout penetration rate is decreased by the increase of grout viscosity and clogging phenomena.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.