• Asian Journal of Atmospheric Environment
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• v.7 no.1
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• pp.17-24
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• 2013

Fog deposition onto the cool-temperate deciduous forest around Lake Mashu in northern Japan was estimated by the inferential method using the parameterizations of deposition velocity and liquid water content of fog (LWC). Two parameterizations of fog deposition velocity derived from field experiments in Europe and numerical simulations using a detailed multi-layer atmosphere-vegetation-soil model were tested. The empirical function between horizontal visibility (VIS) and LWC was applied to produce hourly LWC as an input data for the inferential method. Weekly mean LWC computed from VIS had a good correlation with LWC sampled by an active string-fog collector. By considering the enhancement of fog deposition due to the edge effect, fog deposition calculated by the inferential method using two parameterizations of deposition velocity agreed with that computed from throughfall data. The results indicated that the inferential method using the current parameterizations of deposition velocity and LWC can provide a rough estimation of water input due to fog deposition onto cool-temperature deciduous forests. Limitations of current parameterizations of deposition velocity related to wind speed, evaporation loss of rain and fog droplets intercepted by tree canopies, and leaf area index were discussed.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.1
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• pp.19-29
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• 2001

Atmospheric concentrations of acidic pollutant were measured by the 4 stage filter pak method at Chunchon and by the 3 stage filter pack method at Seoul and Anmyon-do from January to December 1998. The sample was collected for 24 hours on every Wednesday. Concentrations of particulate matters were highest at Anmyon-do. The particulate concentration was much higher during the warm season than other seasons. While the particulate concentration was higher during the warm season, the concentration of gaseous matter was higher in winter. Dry deposition flux was calculated by using reported deposition velocities and concentration of pollutants measured in this study. The dry deposition velocities used in this study for SO$_2$, SO$_{4}^{2}$, HNO$_3$,NO$_{3}^{-}$ and NH$_3$ were 0.29, 0.15, 2.08( 2.13 only for Anmyon-do), 0.20 and 1.00cm/sec, respectively. At Chunchon, annual sulfur flux originated from dry deposition was 384 kg/$textrm{km}^2$, and the flux from wet deposition was 782kg/$textrm{km}^2$. Dry deposition of sulfur was 33% of total sulfur deposition. The annual nitrogen flux originated from dry deposition was 1,892kg/$textrm{km}^2$. And the flux from wet deposition was 1,066kg/$textrm{km}^2$. Dry deposition of nitrogen was 64% of total nitrogen deposition. Dry deposition as well as wet deposition have to be considerd in the study on acidification of environment such as soil or watershed.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.5
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• pp.445-451
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• 2000

To estimate dry deposition flux of 12 elements in aerosols, aerosol particles were sampled by a low-pressure impactor(LPI) and a dust jar. The concentrations of 12 elements in aerosol particle and dry deposition were analyzed by a PIXE analysis using as a 2.0 MeV-proton beam. The mean dry deposition velocities of 12 elements were estimated by ranges of 0.74∼2.62 cm/sec. The results showed that the highest value was 3.26 cm/sec for Ca and the lowest value 0.74 cm/sec for Fe. The dry deposition flux for elements was calculated as a function of particle size by 1-step method and 12-step method. In this work, dry deposition velocities were computed with the two existing models; the coarse-particle fraction(4∼30 mm diameter) using the dry deposition velocity model of the Noll and Fang(1998) and the fine-particle fraction (0.05∼4mm diameter) using the Shemel and Hodgson(1980) model. The ratios of the mean calculated/measured fluxes were 3.59 for 1-step method and 0.60 for 12-step method respectively.

• Journal of Welding and Joining
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• v.20 no.5
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• pp.120-126
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• 2002

Ni-5%Al alloy powder is widely used as the bond coating powder to improve the adhesive strength between the substrate and coating. The important properties in the bond coating are the deposition efficiency and surface roughness. In this study, it was tried to optimize the plasma spray parameters to maximize the deposition efficiency and surface roughness. In the first step, spray current and hydrogen gas flow rate were optimized in order to increase the deposition efficiency. In the next step, the seven plasma spray variables were selected and optimized to improve both the deposition efficiency and surface roughness using the Taguchi experimental method. By these optimization, the deposition efficiency was improved from about 10 % at the frist time to 51.2 % by the optimization of spray current and hydrogen gas flow rate and finally to 65.2 % by the Taguchi experimental method. The average surface roughness was increased from about $12.9\mu\textrm{m}$ to $15.4\mu\textrm{m}$.

• Journal of Korea Society of Digital Industry and Information Management
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• v.15 no.4
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• pp.63-70
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• 2019

The subject of the simultaneous measuring system of base pattern and deposition pattern is a new research topic on a defect inspection of OLED. In this paper, we propose a new OLED inspection method that simultaneously measures standard and deposition pattern images. This method reduces unnecessary processes and tac time during OLED inspection. For an additional reduction of the tac time during pattern measurement, the ROI was configured to measure only in the designated ROI area instead of measuring the entire area of an image. During the ROI set-up, the value of effective deposition pattern area is included so that if the deposition pattern is out of the ROI zone, it would be treated as a defect before measuring the size and center point of the pattern. As a result, the tac time and inspection process could be shortened. The proposed method also could be applied to the OLED manufacturing process. Production of OLED could be increased by reducing tac time and inspection process.

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.