• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.1-4
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• 2005

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

• Journal of Radiation Protection and Research
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• v.25 no.1
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• pp.11-19
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• 2000

The sensitivity analysis of input parameters for a dynamic food chain model DYNACON was conducted as a function of deposition date for the long-lived radionuclides $(^{137}Cs,\;^{90}Sr)$. Also, the influence of input parameters for the short and long-terms contamination of selected foodstuffs (cereals, leafy vegetables, milk) was investigated. The input parameters were sampled using the LHS technique, and their sensitivity indices represented as PRCC. The sensitivity index was strongly dependent on contamination period as well as deposition date. In case of deposition during the growing stages of plants, the input parameters associated with contamination by foliar absorption were relatively important in long-term contamination as well as short-term contamination. They were also important in short-term contamination in case of deposition during the non-growing stages. In long-term contamination, the influence of input parameters associated with foliar absorption decreased, while the influence of input parameters associated with root uptake increased. These phenomena were more remarkable in case of the deposition of non-growing stages than growing stages, and in case of $^{90}Sr$ deposition than $^{137}Cs$ deposition. In case of deposition during growing stages of pasture, the input parameters associated with the characteristics of cattle such as feed-milk transfer factor and daily intake rate of cattle were relatively important in contamination of milk.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.105-112
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• 2002

We studied the optical and structural properties of conventional and ion-beam-assisted-deposition (IBAD) Nb$_2$O$_{5}$ films which were evaporated by an electron beam gun. The vacuum-to-air spectral shift and the cross sectional SEM images of the Nb$_2$O$_{5}$ films were investigated. The results show that the IBAD Nb$_2$O$_{5}$ films have a higher packing density than the conventional Nb$_2$O$_{5}$ films. The average refractive index of IBAD Nb$_2$O$_{5}$ films was increased, while the extinction coefficient was decreased compared with the conventional films. As the oxygen flow was increased, the average refractive index and extinction coefficient of the conventional and IBAD films decreased. Both the conventional and IBAD Nb$_2$O$_{5}$ films showed inhomogeneity in refractive index, and the degree of inhomogeneity of the IBAD Nb$_2$O$_{5}$ films became larger as the ion current density was increased. All Nb$_2$O$_{5}$ films were found to be amorphous by x-ray diffraction (XRD) analysis, and hence the crystal structure of Nb$_2$O$_{5}$ films was not changed by IBAD.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.478-483
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• 1999

The effects of the composition on the consolidation temperature and refractive index of the glass thin film fabricated by aerosol flame deposition method in SiO$_2$-B$_2$O$_3$-CaO-P$_2$O\ulcorner system were investigated. When the amount of CaO was constant in SiO$_2$-B$_2$O$_3$-CaO system the consolidation temperature of glass thin film decreased with increasing the amount of B$_2$O$_3$. Also, when the amount of SiO$_2$ and B$_2$O$_3$ was constant the consolidation temperature of glass thin film increased with increasing the amount of CaO. P$_2$O\ulcorner was added to 72.5SiO$_2$-25B$_2$O$_3$-2.5CaO in order to decrease its consolidation temperature. As the amount of P$_2$O\ulcorner increased its consolidation temperature decreased and the refractive index linearly increased from 1.4649 to 1.4684. When the amount of CaO and P$_2$O\ulcorner was constant in SiO$_2$-B$_2$O$_3$-CaO-P$_2$O\ulcorner system the consolidation temperature of glass thin film decreased with increasing the ratio of SiO$_2$/B$_2$O$_3$.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.44-51
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• 1995

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.28-29
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• 1995

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.739-745
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• 1998

The objective of this paper is to provide experimental data of Er(rare- earth)doped $SiO_2$thin film made by sputtering methods. The deposition rate of silica glass by sputtering method was 55$\AA$/min. In EDD measurements, the average Er concentration in the deposited film was 0.77(wt%). After annealing at $900^{\circ}C$, the Cl concentration decreased from 3.79(wt%) to 1.52(wt%). The refractive indices of the core $n_1$, cladding $n_2$ were 1.458, 1.558 respectively at 632.8 nm. The refractive index difference between core and cladding, $\Delta$n was 0.1. The refractive index profile of core and cladding interface shows step profile. In the study, $SiO_2$ glass films of Si wafer were successfully doped with active erbium. Therefore, this experimental data will be applicable for fabrications of Er doped planar integrated optical device.