• 한국세라믹학회지
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.196-199
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• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• 한국진공학회지
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• 제19권3호
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• pp.230-235
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• 2010

본 논문에서는 TCP-CVD를 이용하여 실리콘 산화막 형성에서 산화막의 특성에 영향을 미치는 전력, 가스 유량, 기판 바이어스 등의 공정조건에 따른 증착률과 굴절률을 제어하고자 한다. 그 결과 기판온도 300 [$^{\circ}C$], $SiH_4$ : $O_2$=50 : 100 [sccm], TCP power 1 [kW], 기판 바이어스 200 [W]를 인가한 조건에서 매우 우수한 균일도(<1 [%]) 및 증착률(0.28 [${\mu}m$/min])과 굴절률 (1.4610-1.4621)을 나타내는 안정된 $SiO_2$ 산화박막을 제조할 수 있었다.

• 한국연소학회지
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• 제22권4호
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• pp.27-34
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• 2017

Various approaches have been proposed to predict the ash deposition (slagging and fouling) propensity of coal, which is essential in maintaining high efficiency and preventing corrosion/damage of a coal-fired boiler. The common method is to establish an index of the ash deposition propensity based on elementary coal composition and advanced characterization of ash properties, which is readily applicable to design, operation and maintenance of coal-fired boilers. Although many indexes have been developed for this purpose, their validity is still not satisfactory in actual applications to particular coal types or operating conditions. This paper reviews the status of predictive approaches for the ash deposition propensity, and assesses the performance of existing indexes by comparing the results for selected coals. This work will contribute to the development of a comprehensive and practical method for prediction of the ash deposition propensity.

• Asian Journal of Atmospheric Environment
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• 제7권1호
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• pp.17-24
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• 2013

Fog deposition onto the cool-temperate deciduous forest around Lake Mashu in northern Japan was estimated by the inferential method using the parameterizations of deposition velocity and liquid water content of fog (LWC). Two parameterizations of fog deposition velocity derived from field experiments in Europe and numerical simulations using a detailed multi-layer atmosphere-vegetation-soil model were tested. The empirical function between horizontal visibility (VIS) and LWC was applied to produce hourly LWC as an input data for the inferential method. Weekly mean LWC computed from VIS had a good correlation with LWC sampled by an active string-fog collector. By considering the enhancement of fog deposition due to the edge effect, fog deposition calculated by the inferential method using two parameterizations of deposition velocity agreed with that computed from throughfall data. The results indicated that the inferential method using the current parameterizations of deposition velocity and LWC can provide a rough estimation of water input due to fog deposition onto cool-temperature deciduous forests. Limitations of current parameterizations of deposition velocity related to wind speed, evaporation loss of rain and fog droplets intercepted by tree canopies, and leaf area index were discussed.

• 한국세라믹학회지
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• 제24권2호
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• pp.170-178
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• 1987

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.

• 한국세라믹학회지
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• 제45권9호
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.1-6
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• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• 한국세라믹학회지
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• 제37권2호
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• pp.117-121
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• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.