• 한국결정성장학회지
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• 제15권4호
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• pp.135-140
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• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.74-80
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• 2009

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

• 터널과지하공간
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• 제10권2호
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• pp.237-248
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• 2000

역학적으로 안정한 공동 및 처분공 간격을 결정하기 위해, 현재 수행 중인 열 해석의 중간 결과를 근거로 범용 해석 프로기램인 ABAQUS 버전 5.8을 이용해 3차원 유한요소해석을 수행하였다. 세 가지 초기지압을 조건으로 공동간격과 처분공 간격을 바꿔가면서 선형탄성해석을 수행하였고. 그 결과를 분석하여 굴착 후 응력재분배에 의한 암반의 거동은 어떤 경향을 가지고 있으며, 적절한 공동 간격 및 처분공 간격은 어느 정도가 좋은지를 분석하였다. 또한 각 경우 역학적인 안전계수는 어느 정도인지도 계산하였다. 국내지압분포를 근거로 도출한 초기지압 하에서는 공동간격 40m, 처분공간격 3m인 경우 안전계수 3.42가 계산되어 아주 안정한 결과를 얻었고, 스웨덴이나 캐나다의 초기지압 경힘식의 경우의 안전계수는 각각 1.19와 1.27로 비교적 낮은 값이지만 1 이상의 값이므로 응력재분배로 인한 파괴는 일어나지 않는다는 결과를 얻었다.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.18-22
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• 2006

Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.145-145
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• 2011

Recently, multi-hole electrode RF capacitively coupled plasma discharge is being used in the deposition of microcrystalline silicon for thin film solar cell to increase the speed of deposition. To make efficient multi-hole electrode RF capacitively coupled plasma discharge, the hole diameter is to be designed concerning the plasma parameters. In past studies, the relationship between plasma parameters such as pressures and gas species, and hole diameter for efficient plasma density enhancement is experimentally shown. In the presentation, the relationship between plasma deriving frequency and hole diameter for efficient multi-hole electrode RF capacitively coupled plasma discharge is shown. In usual capacitively coupled plasma discharge, plasma parameter, such as plasma density, plasma impedence and plasma temperature, change as frequency increases. Because of the change, the optimum hole diameter of the multi-hole electrode RF capacitively coupled plasma for high density plasma is thought to be modified when the plasma deriving frequency changes. To see the frequency effect on the multi-hole RF capacitively coupled plasma is discharged and one of its electrode is changed from a plane electrode to a variety of multi-hole electrodes with different hole diameters. The discharge is derived by RF power source with various frequency and the plasma parameter is measured with RF compensated single Langmuir probe. The shrinkage of the hole diameter for efficient discharge is observed as the plasma deriving frequency increases.

• 센서학회지
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• 제27권1호
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• pp.55-58
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• 2018

Low-cost and large-scale fabrication method of nanohole array, which comprises nanoscale voids separated by a few tens to a few hundreds of nanometers, has opened up new possibilities in biomolecular sensing as well as novel frontier optical devices. One of the key aspects of the nanohole array research is how to control the hole size following each specific needs of the hole structure. Here, we report the extensive study on the fine control of the hole size within the range of 500-2500 nm via surface-catalyzed chemical deposition. The initial hole structures were prepared via conventional photo-lithography, and the hole size was decreased to a designed value through the surface-catalyzed chemical reduction of the gold ion on the predefined hole surfaces, by simple dipping of the hole array device into the aqueous solution of gold chloride and hydroxylamine. The final hole size was controlled by adjusting reaction time, and the optimal experimental condition was obtained by doing a series of characterization experiments. The characterization of size-controlled hole array was systematically examined on the image results of optical microscopy, field emission scanning electron microscopy(FESEM), atomic-force microscopy(AFM), and total internal reflection microscopy.

• 한국분무공학회지
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• 제17권1호
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• pp.14-19
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• 2012

The present study conducts experimental investigation on spreading and deposition characteristics of a $4.3{\mu}l$ de-ionized (DI) water droplet impacting upon aluminum (Al 6061) flat and textured surfaces. The micro-textured surface consisted the micro-hole arrays (hole diameter: $125{\mu}m$, hole depth: $125{\mu}m$) fabricated by the conventional micro-computer numerical control (${\mu}$-CNC) milling machine process. We examined the surface effect of texture area fraction ${\varphi}_s$ ranging from 0 to 0.57 and impact velocity of droplet ranging from 0.40 m/s to 1.45 m/s on spreading and deposition characteristics from captured images. We used a high-speed camera to capture sequential images for investigate spreading characteristics and the image sensor to capture image of final equilibrium deposition droplet for analyze spreading diameter and contact angle. We found that the deposition droplet on textured surfaces have different wetting states. When the impact velocity is low, the non-wetting state partially exists, whereas over 0.64 m/s of impact velocity, totally wetting state is more prominent due to the increase kinetic energy of impinging droplet.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• 터널과지하공간
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• 제9권2호
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• pp.102-113
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• 1999

결정질 암반에 설치되는 처분공과 처분터널의 구조적 안정성을 평가하기 위해 UDEC과 3DEC을 이용하여 2차원해석과 3차원 해석의 결과를 비교 분석함으로써 불연속면의 존재, 처분공 사이의 간격 등이 처분터널과 처분공의 안정성에 미치는 영향을 파악하고자 하였다. 2차원 및 3차원 불연속 해석모델에서 최대주응력 및 파괴발생 가능성이 큰 지점은 터널과 불연속면 사이의 암반이다. 또한 처분공을 포함하는 해석단면에 대한 2차원 및 3차원 해석결과, 합리적인 결과를 얻기 위해서는 3차원 해석이 필요함을 제시할 수 있었다. 그리고 처분공 간격이 8m에서 3m로 감소하더라도 처분터널의 역학적인 안정성에는 큰 변화가 발생하지 않는 것으로 나타났다