• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2247-2254
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• 2010

The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1532-1535
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• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.9-10
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• 2005

We report on the fabrication and characterization of self- and artificially-controlled ZnO nanostructures have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanostructures on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing metalorganic chemical vapor deposition (MOCVD) in addition with a focused ion beam (FIB) technique. Widely well-aligned two-dimensional ZnO nanodot arrays ($4{\sim}10^4$ nanodots of 130-nm diameter and 9-nm height over $150{\sim}150{\mu}m^2$ with a period of 750 nm) have been realized by MOCVD on $SiO_2/Si$ substrates patterned by FIB. A low-magnification FIB nanopatterning mode allowed the periodical nanopatterning of the substrates over a large area in a short processing time. Ga atoms incorporated into the surface areas of FIB-patterned nanoholes during FIB engraving were found to play an important role in the artificial control of ZnO, resulting in the production of ZnO nanodot arrays on the FIB-nanopatterned areas. The nanodots evolved into dot clusters and rods with increasing MOCVD growth time.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.269-276
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• 2011

Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

• Corrosion Science and Technology
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• v.17 no.1
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• pp.1-5
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• 2018

As structural materials, magnesium (Mg) alloys have been widely used in the fields of aviation, automobiles, optical instruments, and electronic products. There are few studies on the effect of coating conditions on the compositional variation during the formation process of the conversion coatings. Rare-earth based conversion coating on AZ91 magnesium alloy was prepared in ceric sulfate and hydrogen peroxide contained solution. The element composition and valence as well as their distribution in the coating were analyzed with energy dispersive X-ray spectroscopy (EDS), Electron probe micro-analyzer (EPMA), X-ray photoelectron spectroscopy (XPS). The effect of treating process on the element composition were also studied. It was found that the conversion coating surface consists of Mg, Al, O, Ce, and the weight content of Ce in the coating was affected by the treating solution concentration and immersion time; the Ce element was distributed in the coating non-uniformly and existed in the form of $Ce^{+3}$ and $Ce^{+4}$, while the O element existed in the form of $OH^-$, $O^{2-}$, $H_2O$. Based on microscopic analysis results, the electrochemical deposition mechanism on the micro-anode and micro-cathode in the process of the coating growth was suggested.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• Korean Journal of Poultry Science
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• v.29 no.1
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• pp.37-43
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• 2002

This experiment was conducted to study the effect of early-life feed restriction with diet dilution on compensatory growth, feed efficiency and abdominal fat pad deposition in broilers. In this study, the chicks were randomly assigned to five treatments. Twenty chicks were assigned to each floor pen, and each dietary treatment was replicated with three pens. Birds In control group (C) were full-fed a starter diet throughout the experimental period, and all birds in four dietary treatments (T1-T4) were fed as starter diet diluted with 50% rice hulls. Birds in T1 were fed with a diluted starter diet ad libitum from 7- to 74-d. In T2,the feeding program was 1-d withdrawal alternating with 3-d feed and in T3 1-d withdrawal alternating with 2-d feed. The feeding Program in T4 was alternate days withdrawal and feeding. The feeding with the diluted starter diet (T1) did not significantly affect to growth rate as compared to the birds of C. When periods of 24 h feed withdrawal were Imposed in conjunction with the diluted diets, birds were under weight at 49 d. As the diluted diet treatment was combined with feed withdrawal (T2-T4), there were further less growth. During the 22 to 49 d Period,T1 birds had greater weight gain compared to other treatments (P<0.05) . Birds consumed less feed from 7- to 49-d when the rice hull dilution was used, and this effect was increased by imposition of feed withdrawal (P<0.07) . If rice hull was excluded from the calculation of feed intake (assumed indigestible) then Intake of the starter diet was markedly less for restricted vs. control birds. After 22 d and from 7 to 49 d, restricted birds had superior feed conversion (P<0.05) compared to control birds. Abdominal fat pad deposition and mortality were not influenced by early feed restriction by diluted diet (P<0.05) .