• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1998년도 춘계학술발표회논문집(2)
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• pp.216-221
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• 1998

A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO$_2$-Y$_2$O$_3$ (m.p 264O $^{\circ}C$), was conducted with a view developing a new method for nuclear fuel fabrication Before making dense pellets more than 96％TD., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power powder spraying distance, sheath gas composition, probe position, particle size and powders different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11％ theoretical density when the sheath gas flow rate was Ar/H$_2$120/20 l/min, probe position 8cm, particle size -75 ${\mu}{\textrm}{m}$ and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology. particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.72-75
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• 2023

Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국재료학회지
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• 제8권11호
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• pp.1048-1054
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• 1998

Pt 상부 전극 증착온도가 Pb(Zr,Ti)$O_3$(PZT) 박막의 전기적 특성에 미치는 영향에 대하여 연구하였다. Pt 상부 전극을 $200^{\circ}C$이상의 고온에서 증착하는 경우, Pt 전극의 하부에 위치한 PZT 박막은 강유전 특성이 심하게 저하되었으나, Pt 전극이 증착되지 않았던 부분은 강유전 특성이 저하되지 않았다. 이와 같은 현상이 발생된 것은 진공 chamber 내의 수증기가 Pt 상부전극의 촉매 작용에 의해 수소 원자로 분해되고, 이 분해된 수소 원자가 고온에서 Pt 하부의 PZT 박막 내로 확산해 들어가 PZT박막에 산소 공공을 만들어 내기 때문이다. Pt의 촉매 작용이 없이는 수증기의 수소 원자로의 분해가 어려우므로 Pt 전극이 덮여져 있지 않는 PZT 박막은 강유전 특성이 저하되지 않는다. 이러한 강유전 특성의 저하는 산소 분위기의 RTA(rapid thermal annealing)처리에 의해 회복이 되었다. 한편, 누설전류 특성은 Pt 상부 전극의 증착온도가 증가함에 따라 향상되는 특성을 보였다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2009년도 춘계 학술발표회
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• pp.154-163
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• 2009

The groutability depends on the properties of the grout, its injection processes, and on the mechanical properties of the soil formation. During the process of pouring cement-based grouting into a porous medium, a variation with time occurs in the viscosity of grout suspension. In addition the particle filtration phenomenon will limit the expansion of the grouted zone because cement particles are progressively stagnant within the soil matrix. In this paper, a closed-form solution was derived by implementing the mass balance equations and the generalized phenomenological filtration law, which can be used to evaluate the deposition of cement-based grout in the soil matrix. The closed-form solution relevant to a particular spherical flow was modified by a step-wise numerical calculation, considering the variable viscosity caused by a chemical reaction, and the decrease in porosity resulting from grout particle deposition in the soil pores. A series of pilot-scale chamber injection tests was performed to verify that the developed step-wise numerical calculation is able to evaluate the injectable volume of grout and the deposition of grout particles. The results of the chamber injection tests concurred well with that of the step-wise numerical calculation. Based on the filtration phenomenon, a new groutability criterion of cement-based grout in a porous medium was proposed, which might facilitate a new insight in the design of the grouting process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• 한국기계가공학회지
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• 제18권3호
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• pp.33-40
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• 2019

FDM 3D printers have become widespread, and investment in the 3D printer industry is increasing. Therefore, many 3D printers are released and the functions of products are emphasized. However, to lower unit prices, open-type 3D printers are sold in kit form, and their performance is very low. If the 3D printer has many heat sources and is sealed, there is the possibility that the main accessories (the main board, power supply, and motor) will be damaged by trapped heat. At the same time, if the ambient temperature is low due to the properties of the material, the output quality deteriorates. In this study, we analyzed the temperature rise of the main accessories and the quality of the output by the heat bed when a chamber was added to an open-type 3D printer. We also compared the quality of the output due to the air flow with the temperature rise of the main accessories. Moreover, we found the optimal value. As a result of the quality analysis, it was finally confirmed that the case with the chamber at $95^{\circ}C$ was the best for the printing condition. In addition, in the absence of the chamber, the bending of the specimen was found to be large, and in the case of the chamber, the degree of bending was slightly decreased by 0.05 mm.

• 한국재료학회지
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• 제15권10호
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.