• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Journal of Welding and Joining
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• v.35 no.3
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• pp.28-34
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• 2017

The authors derived the criteria on the process parameters of laser depositions with metal powers(SUS316L & IN718) by evaluating the surface and cross-section properties of the deposition layers. The surface characteristics of the deposition layer are investigated through optical microscopy by controlling the process parameters of laser output, powder feeding rate and gas feeding rate. The cross-section characteristics were also analyzed after polishing and chemical etching process. As the gas feeding rate increased, the amount of powder loss increased and the difference in the dilution ratio and heat affected zone depending on laser outputs was observed. In addition, the powder feeding rate used in the experiment did not interfere with the energy absorption of the base material.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.206-212
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• 1994

In this paper, We discuss the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time. The factors acted with $POCI_3$ doping are gas flow rate deposition temperature and time etc. Among them the temperature is the most important factor. For the $POCI_3$ flow rate, it should not exceed the resistivity saturation point developed on poly surface by annealing treatment. Therefore, this study suggests the optimum conditions of Poly-silicon treatments with the $POCI_3$ flow rate.

• Journal of the Korean institute of surface engineering
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• v.22 no.3
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• pp.118-127
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• 1989

The rate of electrodeposition Zinc-nickel alloy on to electrolytic ione in sulface solution both under an inter and air atmospherss has studied by use of a rotating disc geometry. The kinetics shows 1st order reaction, and the rate constants are proportional to the square root of rpm, however, they are less than the valuse suggested by Levich. The rate constants of zinc deposition approach the total mass transfer rate constants with increasing potential and deviate with increasing rotaing speed, but those of nickel deposition are constant. Below $40^{\circ}C$ the activation engrgies of zinc deposition and nikel deposition were 4.4Kcal/mol and 6.3Kcal/mol respectively. There results show that overall reaction rate of zinc-nickel plaeting is controlled by mixed reaction and zinc deposotion is more affected by mass transfer reaction than nickel. The current density for the zinc-nickel plating was less in an air atmosphere than in a nitrogen atmosphere. The cathode efficiency increased with decreasing cathode rotating speeds, potentials, and increasing temperatures. Zzinc-nickel platings are more improved in microhardnss than zinc platings.

• Asian Journal of Atmospheric Environment
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• v.11 no.4
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• pp.270-282
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• 2017

To evaluate the deposition amount on a ground surface, mesoscale numerical models coupled with atmospheric chemistry are widely used for larger horizontal domains ranging from a few to several hundreds of kilometers; however, these models are rarely applied to high-resolution simulations. In this study, the performance of a dry and wet deposition model is investigated to estimate the amount of deposition via computational fluid dynamics (CFD) models with high grid resolution. Reynolds-averaged Navier-Stokes (RANS) simulations are implemented for a cone and a two-dimensional ridge to estimate the dry deposition rate, and a constant deposition velocity is used to obtain the dry deposition flux. The results show that the dry deposition rate of RANS generally corresponds to that observed in wind-tunnel experiments. For the wet deposition model, the transport equation of a new scalar concentration scavenged by rain droplets is developed and used instead of the scalar concentration scavenged by raindrops falling to the ground surface just below the scavenging point, which is normally used in mesoscale numerical models. A sensitivity analysis of the proposed wet deposition procedure is implemented. The result indicates the applicability of RANS for high-resolution grids considering the effect of terrains on the wet deposition.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.457-457
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• 2012

We presented plasma processing using a DC Arc Plasmatron for diamond deposition on Al2O3 ceramic substrates. Plasma surface treatments were conducted to improve deposition condition before processing for diamond deposition. The Al2O3 ceramic substrates deposited, $5{\times}15mm^2$, were investigated by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Diffraction (XRD). Properties of diamond (111), (220) and (311) peaks were shown in XRD. We identified nanocrystalline diamond films on substrates. The results showed that deposition rate was approximately $2.2{\mu}m/h$ after plasma surface treatments. Comparing the above result with a common processing, deposition rate was improved. Also, the surface condition was improved more than a common processing for diamond deposition on Al2O3 ceramic substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.