• Transactions on Electrical and Electronic Materials
• /
• 제7권1호
• /
• pp.7-11
• /
• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.28-28
• /
• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국재료학회지
• /
• 제8권5호
• /
• pp.383-393
• /
• 1998

고효율 박막형 태양전지 제조를 위해 근접승화법에 의한 CdTe박막의 성장을 연구하였다. 내부압력의 변화, 기판과 소스 사이의 거리, 기판과 소스의 온도 등의 변수가 성장속도와 미세구조에 미치는 영향을 관찰했다. 내부압력의 변화에 따라 성장과정이 diffusion limited transport와 sublimation limited transport로 나뉘어지며, 이 두가지 성장방식의 분기점은 기체분자의 평균자유행정거리에 의해 결정되었다. 소스의 형태에 따라서 박막의 성장속도와 미세구조는 큰 차이를 보였으며, 실험을 통해 이러한 차이가 증발표면의 온도강하에 의한 현상임을 규명하였다. 기판과 소스사이의 간격에 따른 성장속도를 해석하기 위해 일방향열해석을 통해 기판과 소스표면의 온도를 계산하였다. X선 회절분석과 표면형상의 관찰을 통해 성장속도가 박막의 미세구조에 영향을 줌을 알았다. 기판의 온도가 증가하면서 박막성장시 (111)로의 우선성장방위가 관찰되었지만 고온이 되면서 다시 random orientation의 경향을 나타냈다.

• Current Photovoltaic Research
• /
• 제2권3호
• /
• pp.88-94
• /
• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• 한국가스학회지
• /
• 제21권1호
• /
• pp.80-86
• /
• 2017

본 논문에서는 유해배출물질 저감장치인 DPF의 문제를 해소하기 위하여 제안된 것으로서, 양방향으로 분기되는 배기가스 유로를 통하여 자동차의 엔진 구동시 발생되는 배기가스를 효율적으로 유도하고 2개의 DPF 장치를 장착함으로서 교번작용을 통한 유해배출물질 정화 및 재생연소특성을 효율적으로 적용할 수 있도록 개발한다. DPF 내부에 입자상물질 적층현상으로 인한 배기가스의 내부압력 증가를 피할 수 있고, 출력저하 및 연비효율이 떨어지는 등의 문제를 획기적으로 개선하여 고효율의 출력을 유도할 수 있는 자동차 배기가스 정화 시스템을 제공하려는데 그 목적이 있다.

• Current Photovoltaic Research
• /
• 제10권2호
• /
• pp.33-38
• /
• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.

• 한국추진공학회지
• /
• 제2권2호
• /
• pp.14-23
• /
• 1998

본 연구에서는 제트 추진 기관의 터빈 익렬에서의 유동과 대기중에 부유되어 있는 입자들이 제트엔진 내부로 유입될 경우 이에 따른 압축기 날개의 마모 및 충돌 부위를 예측하기 위하여 수치해석을 수행하였다. 일반적으로 각종 항공기의 추진 기관용 가스 터빈 엔진은 대기중에 부유되어 있는 각종 입자들의 영향을 받게 된다. 특히, 화산 지역, 먼지 입자 부유물이 많은 공업지대 또는 사막지역을 비행하는 항공기의 경우는 모래 알갱이, 먼지, 및 연소 입자의 직접적인 영향을 받아 각 요소들에 심각한 부식 및 마모가 발생됨으로써 성능 저하 및 냉각통로의 막힘, 압축기와 터빈 날개의 손상 등이 예측되어 진다. 이러한 손상들은 초기에는 미세하게 발생하지만, 손상 정도가 점점 누적됨에 따라서 항공기의 안전 운전에 심각한 위험 요소로서 작용할 수 있으며, 경제적으로도 기관의 유지 보수비용의 증가를 가져 올 수 있다. 따라서 압축기에 화산재 또는 대기중에 부유되어 있는 금속 입자나 먼지 입자 등이 유입되었을 경우, 압축기 날개의 손상 부위와 정도를 예측하는 것이 필요하다. 따라서 본 연구에서는 다양한 입자의 유입각에서 라그랑지안 방법을 적용하여 압축기 날개 유로로 부유된 입자의 궤적을 예측하고 입자의 충돌에 의한 충격량을 계산하였다. 아울러 정량적인 충돌량을 해석하기 위하여 입자 충돌 계수를 정의하여 압축기 날개 표면의 충돌특성을 해석하였다. 세라믹과 연강에 대한 날개 표면의 마모량을 계산하였으며, 이러한 예측들을 통하여 표면에의 코팅 등의 개선책을 찾을 수 있었다.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
• /
• pp.79-79
• /
• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.