• 대한화학회지
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• 제38권7호
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• pp.473-479
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• 1994

저압 화학 기상 증착법을 사용하여 $WF_6$의 환원반응으로 텅스텐 박막을 p형 실리콘 (100)표면위에 증착하였다. Cold-wall조건에서는 실리콘 기판과 $SiH_4$를 각각 이용하여 $WF_6$를 환원시켜 텅스텐 박막을 증착하였으며 hot-wall 조건에서는 $WF_6$를 $SiH_4$로 환원시켜 증착하였다. 박막의 결정구조는 어느 조건에서나 체심입방구조를 이루었으며, 증착조건에 따른 박막의 물리적 및 전기적 특성을 조사하였다. 증착된 박막을 온도 $800^{\circ}C$에서 열처리한 결과 hot-wall 조건의 박막이 $WSi_2$로 변화하였다. Hot-wall과 cold-wall조건에서의 박막을 분석한 결과 박막의 특성은 cold-wall조건이 우수하나 hot-wall조건에서는 열처리 방법에 의하여 실리콘 기판과 적합성이 우수한 것으로 알려진 $WSi_2$ 박막의 제조가 가능함을 알 수 있었다.

• Corrosion Science and Technology
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• 제13권3호
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• pp.107-111
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• 2014

Electroless plated Ni-Co-P films have been used to suppress the electromagnetic waves from magnetic recording media, and the suppression is known to be achieved with films made with optimized plating composition and plating condition. Effects of complexing agents on the deposition rate and bath stability of Ni-Co-P film were studied using sodium citrate, sodium tartrate and multi-complex agents containing both of them. Deposition of electroless Ni-Co-P platings was dependent upon the complexing agents. Deposition rate was twice when using sodium tartrate compared to that using sodium citrate. And it was slightly slower with multi-complex agents than with sodium tartrate, bath stability being declined in the former. Deposition rate increased with increasing pH until pH 11. Excellent bath stability and good deposition rate were obtained using multi-complex agent as sodium citrate 0.10 mol/L and sodium tartrate 0.15 mol/L in the electroless Ni-Co-P plating films.

• 한국기계가공학회지
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• 제20권1호
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• pp.16-24
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• 2021

A laser-engineered net shaping (LENS) process is a representative directed energy deposition process. Deposition characteristics of the LENS process are greatly dependent on the process parameters. The present paper preliminarily investigates deposition characteristics of Inconel 718 superalloy on S45C structural steel using a LENS process. The influence of process parameters, including the laser power and powder feed rate, on the characteristics of the bead formation and the dilution in the vicinity of the deposited region is examined through repeated experiments. A processing map and feasible deposition conditions are estimated from viewpoints of the aspect ratio, defect formation, and the dilution rate of the deposited bead. Finally, an appropriate deposition condition considering side angle, deposition ratio, and buy-to-fly (BTF) is predicted.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.531-534
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• 2002

NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10$^{\circ}$. The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$.

• 한국진공학회지
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• 제7권4호
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• pp.314-319
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• 1998

반응성 스퍼터링 방법을 사용해서 SKD 61강 기판상에 TiN박막을 제조하였으며, 다 양한 증착조건의 변수에 따른 박막의 증착거동 및 제조된 박막의 물성을 평가하였다. 챔버 내의 가스압력 및 RF인가전압이 높을수록 증착속도는 급격하게 증가하였다. 반면에 혼합가 스의 질소함량이 높을수록 증착속도는 감소하였으며, 박막의 표면에 hillock이 발생하였다. 대표적인 증착조건으로 제조된 TiN박막의 경우(111) 우선배향성을 보였으며, 비교적 순수한 TiN의 화학양론비를 충족하는 박막임을 알 수 있었다.

• 한국응용과학기술학회지
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• 제14권1호
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• pp.89-93
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• 1997

In this research, ultra-thin films of organic charge transfer complex were deposited on to ordinary microscope slide-glass subtrates with a Langmuir-Blodgett technique. ${\pi}$-A isotherm characteristics of these complex were studied in order to find optimum conditions of deposition by varying temperature of subphase, compression speed, and spreading amount. Transfer ratio of these films were studied during the process of deposition. The UV-visible absorbance spectra of LB films were measured to find state of deposition by varing layer number. The observed optimum conditions of surface, pressure, spreading amount, and dipping speed for depositing LB films(Y-type) were 38m/Nm, $150{\mu}l$ and 5mm/min, respectively. Since the tansfer ratio is close to 100%, the monolayer on the subphase seems to be well transferred to the solid substrate. The thickness of the film was well-controlled as the UV-vis absorbance of films were changed linear according to the number of layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.37-40
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• 2002

Superconductor wire fabricated by electrophoresis showed its critical current density depended on parameters such as applied voltage and deposition time. Substrate and suspension solutions. and its properties are also important parameters. When same optimal parameter and condition was used, deposition density of superconductor film affect directly its critical current density. In this study, therefore, electrophoretic deposition technique was utilized for a densification of YBCO superconducting wire, and researches on electrophoretic suspension solutions and additive were experimentally performed for an improvement of the critical current density of fabricated electrophoretically superconducting wire. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density.