• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.11-14
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국표면공학회지
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• 제41권1호
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• pp.6-11
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• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• 한국세라믹학회지
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• 제28권10호
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.362-364
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• 2001

The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.367-370
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• 2000

In this study, thin films of 70/30 and 80/20 mol% P(VDF-TrFE) copolymers were fabricated by physical vapor deposition method. In order to determine the optimum deposition condition, the copolymer thin films were fabricated in the heating temperature of 260$^{\circ}C$, 280$^{\circ}C$, and 300$^{\circ}C$. The deposition rate was measured in a real time by thickness monitor. The surface image of prepared thin films was analyzed by using AFM. From the results of TG-DTA,70/30 and 80/20 mol% P(VDF-TrFE) copolymers were observed the Curie transition point below the melting point. As the results of AFM and FT-IR analysis, we determined that the optimum deposition temperature was 300$^{\circ}C$.

• 공업화학
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• 제10권1호
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• pp.98-104
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• 1999

본 연구에서는 ECR플라즈마 화학증착법을 이용하여 반응기내 압력의 변화에 따라 수소화된 무정형 실리콘막을 증착하고 박막내 수소의 함량과 결합구조 및 전기적 특성을 조사하였다. 일반적인 CVD에 의해 제조된 a-Si:H막은 증착속도가 증가할수록 광감도는 감소하지만 ECR플라즈마의 경우 증착속도가 증가할수록 광감도가 향상되었다. 마이크로파 출력과 사일렌/수소 희석비, 반응기내 압력등이 동일한 실험 조건에서 증착시간에 따른 막의 두께는 선형적으로 증가하고 막내에 함유된 수소의 농도는 일정하지만, 반응시간이 짧은 경우 막내에 $SiH_2$결합이 SiH결합보다 많이 형성되어 광전도도를 저하시킬 수 있다. 반응기내 압력이 증가함에 따라 박막내에 SiH결합이 증가하여 광학 에너지 갭을 줄여 광전도도를 향상시킬 수 있었으나 암전도도의 증가로 광감도는 감소하였다. 따라서 양질의 박막을 얻기 위해서는 압력이 낮고 수소기체의 양이 적은 조건에서 성장시켜야 한다.

• 터널과지하공간
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• 제10권2호
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• pp.237-248
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• 2000

역학적으로 안정한 공동 및 처분공 간격을 결정하기 위해, 현재 수행 중인 열 해석의 중간 결과를 근거로 범용 해석 프로기램인 ABAQUS 버전 5.8을 이용해 3차원 유한요소해석을 수행하였다. 세 가지 초기지압을 조건으로 공동간격과 처분공 간격을 바꿔가면서 선형탄성해석을 수행하였고. 그 결과를 분석하여 굴착 후 응력재분배에 의한 암반의 거동은 어떤 경향을 가지고 있으며, 적절한 공동 간격 및 처분공 간격은 어느 정도가 좋은지를 분석하였다. 또한 각 경우 역학적인 안전계수는 어느 정도인지도 계산하였다. 국내지압분포를 근거로 도출한 초기지압 하에서는 공동간격 40m, 처분공간격 3m인 경우 안전계수 3.42가 계산되어 아주 안정한 결과를 얻었고, 스웨덴이나 캐나다의 초기지압 경힘식의 경우의 안전계수는 각각 1.19와 1.27로 비교적 낮은 값이지만 1 이상의 값이므로 응력재분배로 인한 파괴는 일어나지 않는다는 결과를 얻었다.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.