• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.143-147
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• 2002

In this paper, we investigated the deposition condition of Bragg reflector formation that will be expected to play an important role in future FBAR device applications. The thin films were deposited using an RF/DC magnetron sputtering technique. The material characteristics such as deposition rates, grain structures and surface roughnesses of the deposited silicon dioxide (SiO$_2$) and tungsten (W) films were investigated for various deposition conditions. As a result, it was found that the deposition condition could significantly affect the material characteristics of the deposited films and also the optimization of the deposition process is essentially important to obtain the desirable Brags reflector structure consisted of high-quality in films.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.62-67
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• 2013

The influence of internal stress and joint strength(shear, tensile) according to the deposition conditions was investigated by the Polyimide substrate and ZnO thin film. Deposition thickness and temperature affect the internal stress and the internal stress was minimum at the 60nm and $200^{\circ}C$ of the deposition conditions. Tensile strength is large at the deposition condition that shear strength is large and the shear strength was about 50% of the tensile strength. The shear strength and tensile strength were large at deposition condition that internal stress was small. Crack occurred near the joint interface of Polyimide substrate and progressed along the interface until the final fracture.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.457-457
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• 2012

We presented plasma processing using a DC Arc Plasmatron for diamond deposition on Al2O3 ceramic substrates. Plasma surface treatments were conducted to improve deposition condition before processing for diamond deposition. The Al2O3 ceramic substrates deposited, $5{\times}15mm^2$, were investigated by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Diffraction (XRD). Properties of diamond (111), (220) and (311) peaks were shown in XRD. We identified nanocrystalline diamond films on substrates. The results showed that deposition rate was approximately $2.2{\mu}m/h$ after plasma surface treatments. Comparing the above result with a common processing, deposition rate was improved. Also, the surface condition was improved more than a common processing for diamond deposition on Al2O3 ceramic substrates.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.539-549
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• 1989

Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.279-282
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• 2002

In this paper, we discuss influence of process condition on contact resistance in WSix deposition process. In the WSix deposition process, we confirmed that word line to bit line contact resistance(WBCR) due to temperature of word line WSix deposition among various process condition split experiment. RTP treatment, d-poly ion implantation dose and thickness was estimated a little bit influence on contact resistance. Also, life time of shower head in the process chamber for WSix deposition related to contact resistance. The results obtained in this study are applicable to process control and electrical characteristics for high reliability and high density DRAM's.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.671-676
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.37-40
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• 2007

Diesel autothermal reforming(ATR) is an effective method for hydrogen production. But, diesel ATR has several problems such as the sulfur poisoning of catalyst and carbon deposition during reforming reactor. Especially, carbon deposition is a severe problem, which causes rapid performance degradation, in the reforming reaction. Ethylene among the reformate gas is a carbon precursor. Effective decomposition of ethylene is an important issue. In this paper, we investigated the carbon deposition from ethylene in the reforming reaction for proper reaction condition of diesel ATR. We achieved relatively high performance of diesel ATR under $H_{2}O/C=0.8$, $O_{2}/C=3$ condition that was based on the experiment of ethylene reforming reaction.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.14-17
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• 2005

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.