• Title/Summary/Keyword: Deposit thickness

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Calculation of Deposit Thickness Distribution According to Distance between Contact Points of Rack (랙의 접점간 거리에 따른 도금 두께 분포 계산)

  • Lee, Min-Su;Park, Jae-Yeong;Im, Tae-Hong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.162-162
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    • 2016
  • 비전도체를 피도금체로 하여 전기 도금을 하는 경우 우선 피도금체 상에 시드 층을 형성 시키고 이후 여러 번의 전기도금을 거치게 된다. 이때 접점의 위치와 전류 인가 방법은 도금 특성에 영향을 미치게 된다. 이를 고찰하기 위하여 접점간 거리에 따른 도금 두께 분포 계산을 하였다. 본 연구에서는 도금 분포 계산을 위해 Elsyca社의 PlatingMaster를 사용하였다. 방향별 도금 두께 분포의 변화를 극명하게 관찰하기 위하여 종횡비 10:1로 음극과 양극 모델링을 하였고 접점의 개수는 1 ~ 3개, 접점의 위치는 10 mm 간격으로 이동하는 것을 변수로 하였다. 피도금체의 시드 층은 니켈 층으로 두께 $0.4{\mu}m$로 설정하고 유산동 도금 용액을 이용하여 용액 데이터베이스 측정하고 반영하였다. 계산을 위한 전류 밀도는 $50mA/cm^2$, 도금시간은 10분으로 모든 모델에서 동일하게 적용하였다. 도금이 성장한 면의 두께를 폭과 길이 방향으로 비교 관찰한 결과 전극간의 거리는 시드 층이 얇을수록 두께 분포에 큰 영향을 미쳤다. 하지만 하지 도금 층의 두께가 충분히 두꺼운 경우 전극간의 거리는 큰 영향을 미치지 않는다.

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Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation

  • Hamadi Oday A.;Yahia Khaled Z.;Jassim Oday N.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.182-186
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    • 2005
  • In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.

A Study on the Characteristics of Sn-Cu Solder Bump for Flip Chip by Electroplating (전해도금에 의한 플립칩용 Sn-Cu 솔더범프의 특성에 관한 연구)

  • Jung, Seok-Won;Hwang, Hyun;Jung, Jae-Pil;Kang, Chun-Sik
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.11a
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    • pp.49-53
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    • 2002
  • The Sn-Cu eutectic solder bump formation ($140{\mu}{\textrm}{m}$ diameter, $250{\mu}{\textrm}{m}$ pitch) by electroplating was studied for flip chip package fabrication. The effect of current density and plating time on Sn-Cu deposit was investigated. The morphology and composition of plated solder surface was examined by scanning electron microscopy. The plating thickness increased with increasing time. The plating rate increased generally according to current density. After the characteristics of Sn-Cu plating were investigated, Sn-Cu solder bumps were fabricated on optimal condition of 5A/dm$^2$, 2hrs. Ball shear test after reflow was performed to measure adhesion strength between solder bump and UBM (Under Bump Metallization). The shear strength of Sn-Cu bump after reflow was higher than that of before reflow.

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The Improvement of Magnetic Properties of CoCr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 CoCr박막의 자기적 특성 개선에 관한 연구)

  • 공석현;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.419-422
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    • 1999
  • We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

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Characteristics of Cu Thick Films Deposited by High Rate Magnetron Sputtering Source (고속 스퍼터링 소스를 이용한 구리 후막 제조 및 특성 평가)

  • Jeong, Jae-In;Yang, Ji-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.13-14
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    • 2008
  • A high rate magnetron sputtering source (HRMSS) was employed to deposit thick copper films. The HRMSS was manufactured by changing the magnet size, arrangement, and field intensity. For the preparation of thick copper films, the copper sputtering conditions using HRMSS were characterized based on the deposition parameters such as discharge characteristics, I-V characteristics of the source, and change of deposition rate. The deposition rate of copper turned out to be more than 5 times than that of conventional magnetron sputtering source. Thick copper films having thickness of more than $20{\mu}m$ were prepared by using HRMSS. The morphology and orientation of the films were investigated by scanning electron microscopy and x-ray diffraction.

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Numerical Analysis on the Heat Transfer Characteristics of Syngas Cooling System of an IGCC Process (IGCC 합성가스 냉각 시스템의 열전달 특성 연구)

  • Oh, Junho;Ye, In-soo;Park, Sangbin;Ryu, Changkook;Park, Sungku
    • 한국연소학회:학술대회논문집
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    • 2013.06a
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    • pp.65-68
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    • 2013
  • In a syngas cooling system of coal gasification process, fly slag carried by syngas deposit on the surface of heat exchanger. The deposited materials form a fouling layer with several millimeters thickness, disturbing heat transfer between steam and syngas. This study investigates flow and heat transfer characteristics of syngas in helical coil heat exchanger using computational fluid dynamics under clean and fouled surface condition. Process model were also designed and its results are in good agreement with CFD results.

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Preparing of the AI electrode for OLED by Sputtering Methode (스퍼터링법을 이용한 OLED용 Al 전극의 제작)

  • Kim, Kyung-Hwan;Keum, Min-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05a
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    • pp.72-75
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    • 2005
  • In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

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White Mica and Chemical Composition of Samdeok Mo Deposit, Republic of Korea (삼덕 Mo 광상에서 산출되는 백색운모 및 화학조성)

  • Yoo, Bong Chul
    • Journal of the Mineralogical Society of Korea
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    • v.32 no.3
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    • pp.223-234
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    • 2019
  • The geology of the Samdeok Mo deposit consists of Paleozoic Hwajeonri formation, Kowoonri formation, Suchangri formation, Iwonri formation, Hwanggangri formation, Cretaceous, leucocratic porphyritic granite and granitic porphyry. This deposit consists of three quartz veins that filled NS oriented fractured zones in Suchangri formation. Quartz veins vary from 0.05 m to 0.3 m in thickness and extend to about 400 m in strike length. Quartz veins occur as massive, breccia, and cavity textures. Wallrock alteration has silicification, sericitization, argillitization and chloritization. The mineralogy of the quartz veins consists of quartz, fluorite, white mica, biotite, apatite, monazite, rutile, ilmenite, molybdenite, chalcopyrite, Fe-Mg-Mn oxide and Fe oxide. White mica from Samdeok Mo deposit occurs as fine or coarse grains in quartz vein and hostrock and has four mineral assemblages (I type: quartz, molybdenite, Fe oxide and Fe-Mg-Mn oxide, II type: quartz, Fe oxide and Fe-Mg-Mn oxide, III type: quartz and biotite, and IV type: quartz). The structural formular of white mica from quartz vein is $(K_{0.89-0.60}Na_{0.05-0.00}Ca_{0.01-0.00}Sr_{0.02-0.00})_{0.94-0.62}(Al_{1.54-1.12}Mg_{0.36-0.18}Fe_{0.26-0.09}Mn_{0.04-0.00}Ti_{0.02-0.00}Cr_{0.02-0.00}Zn_{0.01-0.00})_{1.91-1.72}(Si_{3.40-3.11}Al_{0.92-0.60})_{4.00}O_{10}(OH_{1.68-1.42}F_{0.58-0.32})_{2.00}$, but white mica of I type has higher FeO content, and lower $SiO_2$ and MgO contents than white micas of other types. Also, compositional variations in white mica from the Samdeok Mo deposit are caused by phengitic or Tschermark substitution ($(Al^{3+})^{VI}+(Al^{3+})^{IV}{\leftrightarrow}(Fe^{2+}{\text{ or }}Mg^{2+})^{VI}+(Si^{4+})^{IV}$) and direct $(Fe^{3+})^{VI}{\leftrightarrow}(Al^{3+})^{VI}$ substitution.

Study on Fluid Inclusions in Fluorite from the Sinpo Mine (신포광산(新浦鑛山) 형석(螢石)의 유체포유물(流體包有物에)에 관(關)한 연구(硏究))

  • Lee, Choon Woo
    • Economic and Environmental Geology
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    • v.2 no.4
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    • pp.1-21
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    • 1969
  • The Sin po fluorite deposit is of a fissure vein type which strikes $N75^{\circ}E$, dips $80^{\circ}SE$, and is embedded in the pre-Cambrian crystalline schist. The vein is 1 meter in average in thickness, about 800 meters in length and nearly 400 meters in depth. Narrow veins of crustified fluorites and agatic quartz are discontinuously embedded in the quartz gangue. Two-phase fluid inclusions, which are available for the homogenization method by using the Heating Stage Microscope 350, are found in the fluorite crystals. Most of the fluid inclusions are primary in origin and mainly composed of liquid phase associated with minor gas phase. They are tetrahedral, rounded-tubular, wedge shaped, rectangulartrapezoid, and irregular in shape. The maximum diameter of inclusions is 0.5mm and the minimum, 0.03mm, ranging from 0.2mm to 0.08mm in an average. The homogenization temperatures obtained from the test are $135-147^{\circ}C$, $125-138^{\circ}C$, $121-137^{\circ}C$, $116-133^{\circ}C$ and $106-128^{\circ}C$ in greenish, bluish, violet, light grayish blue, colorless and pinkish fluorites respectively. The range of formation temperatures of fluorites is $106-147^{\circ}C$. Therefore, the fluorite deposit of Sinpo Mine is considered to be of low temperature hydrothermal origin. The isothermal lines were drawn on the longitudinal section of the vein from the data of homogenization test. According to the results, the central and lower parts of the ore shoot in the west ore body show the higher temperatures of $130-138^{\circ}C$ and the peripheral and upper parts of it show the lower temperatures of $108-128^{\circ}C$. It seems that the isothermal trend roughly coinside with the pitch of the ore shoot.

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Tensile Properties of Nickel Electroform(l) (니켈 전주층의 인장 물성(1))

  • Kim I.;Lee J.;Kang K.;Kwon S.C.;Kim M.;Lee J.Y.
    • Journal of the Korean institute of surface engineering
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    • v.38 no.1
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    • pp.21-27
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    • 2005
  • Tensile properties and hardness of nickel electroform from chloride-free nickel sulfamate electrolyte at 50℃ and PH 4.5 were investigated. Current density varied from 20 to 60 mA/㎠. The deposit thicknesses were 360, 480 and 980 ㎛. It was found in 480 ㎛ thick electroform that highest tensile and yield strengths and hardness of 83.7 ksi, 53.6 ksi and 216 DPH, respectively were obtained at a current density of 40 mA/㎠ and they were slightly decreased at 20 and 60 mA/㎠. However the ductility was lowest of 7.9% at 40 mA/㎠. Such a high strength and low ductility at 40 mA/㎠ seems to be related to the narrower columnar structure than those of other current densities. All the deposits exhibited pronounced necking behavior. Tensile strength, yield strength and ductility increased as the nickel electroform thickens. Initial strong (200) texture developed on stainless steel mandrel decreased and (111) and (220) textures increased as deposit thickness increased, whereas (200) texture was preferred as the current density increased.