• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.104-109
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• 2008

A simple and efficient way of modeling backgating in GaAs MESFET's is presented through depletion width modulation of Schottky junction and channel-substrate interface. It is shown semi-empirically that such a modulation of depletion widths causes serious troubles in designing precision circuits since backgating drastically reduces threshold voltage of MESFET as well as drain current. Finally, some of the results are compared with reported experimental results. This model may serve as a starting point for rigorous characterization of backgating effect on various device parameters of GaAs MESFET's.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.289-292
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• 2005

New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

• Journal of Korea Water Resources Association
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• v.51 no.2
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• pp.99-107
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• 2018

This study was to evaluate the stream depletion due to groundwater pumping from 17 wells near the Anseongcheon upper stream using the Baalousha's analytical solution (2012) which directly considers stream width and streambed hydraulic conductivity. The input hydraulic values of aquifer and streambed were obtained from the pumping tests and seepage experiments. The estimated streamflow depletion rates divided by pumping rate (dimensionless stream depletion) showed a range from 0.23 to 0.89 for 5 year pumping. In particular, the results revealed that the groundwater pumping has insignificant effects on streamflow when the stream depletion factor (SDF) is higher than 1,000 with values of dimensionless stream depletion lower than 0.4. A more simple Hunt's solution (1999) also applied to the same wells, and the results showed that the difference between the dimensionless stream depletions calculated by using both solutions could be negligible. From the comparison of the Baalousha's solution (2012) with the Hunt's solution (1999) with total 3,000 cases of simulations with combinations of various aquifer and stream properties, the stream-well distance should be more longer than stream width for reducing the discrepancy between both solutions.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.10a
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• pp.315.1-315.1
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• 2003

• KSCE Journal of Civil and Environmental Engineering Research
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• v.40 no.6
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• pp.555-561
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• 2020

In this study, the applicability of Hunt's analytical solution for a two-layered leaky aquifer system, which was developed to estimate stream depletion due to the groundwater pumping of the upper shallow aquifer, was evaluated. The 5-year averaged stream depletions were estimated using Hunt's analytical solution for various combinations of hydraulic characteristic values such as transmissivity, storage coefficient of the two aquifers, interlayer leakage coefficient, stream-well distance, hydraulic conductivity of the streambed, and stream width. Through comparison with the numerical solution accurately simulated with a MODFLOW groundwater flow model, the analytical solution derived by regarding the stream width as a point was evaluated. It was found that the error in the stream depletion calculated by the analytical solution can be reduced to less than 0.05 when the stream-well distance is greater than the stream width or when the stream depletion factor (SDF) is more than about 3,000 days. In addition, when the streambed hydraulic conductivity is less than 1 m/d, the hydraulic diffusion coefficient of the lower aquifer layer is less than 100 ㎡/d, the hydraulic diffusion coefficient ratio of the upper and lower aquifer layers is 5 or more, and the leakage coefficient between the layers is less than 0.0004 m/d, the overall analytical solutions were overestimated compared with the numerical solutions.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1337-1339
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• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.2
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• pp.109-115
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• 2017

Using the computational fluid dynamics (CFD) technique, we performed a numerical simulation in anodesupported solid oxide fuel cell (SOFC). The effect of gas channel/rib width on the cell performance and temperature uniformity was investigated in planar type SOFC. The open source CFD toolbox, OpenFOAM, was used as a numerical analysis tool. As a result, the effect of gas channel/rib width on the cell performance and temperature uniformity was not significant if the oxygen depletion is not occurring. On the other hand, the usage of a wide rib and operation at high current density may lead to performance degradation due to oxygen depletion.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• 전기의세계
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• v.27 no.4
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.