• Journal of the Korean Association of Geographic Information Studies
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• v.20 no.3
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• pp.80-89
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• 2017

Due to urban growth and increasing population density, many large cities contain building forests. Moreover, due to increasing demands for pleasant residential environments, there is growing concern over the encroachment of sunshine. Although research on related laws and other related fields is emerging, there is a limit to the extent to which the public can easily determine the amount of sunshine per building without referral to specialized agencies. Therefore, in this study, the duration of sunshine per building object was calculated via a simulation of urban shaded area using a spatial information open platform application programming interface. The study area was the'L'apartment complex located in the new city, Haeundae, Busan, China. To perform the duration of sunshine simulation for three-dimensional urban spatial objects, the building height was extracted from pre-built three-dimensional spatial information data, and the position of the sun was determined from calculations of the altitude and azimuth of the sun. This study provides a more precise and easier method of judging whether sunshine is impeded from reaching buildings by quantitatively analyzing sunshine and classifying the total duration of sunshine and the continuous duration of sunshine on each object.

• Composites Research
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• v.30 no.2
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• pp.84-93
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• 2017

This study investigates thermal and mechanical characterization of environmental barrier coating on the $SiC_f-SiC$ composites. The spherical environmental barrier coating (EBC) powders are prepared using a spray drying process for flowing easily during coating process. The powders consisting of mullite and 12 wt% of Ytterbium silicate are air plasma sprayed on the Si bondcoat on the LSI SiC fiber reinforced SiC composite substrate for protecting the composites from oxidation and water vapor reaction. We vary the process parameter of spray distance during air plasma spray of powders, 100, 120 and 140 mm. After that, we performed the thermal durability tests by thermal annealing test at $1100^{\circ}C$ for 100hr and thermal shock test from $1200^{\circ}C$ for 3000 cycles. As a result, the interface delamination of EBC never occur during thermal durability tests while stable cracks are prominent on the coating layer. The crack density and crack length depend on the spray distance during coating. The post indentation test indicates thermal tests influence on the indentation load-displacement mechanical behavior.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.599-604
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• 2004

The LTCCs (Low-Temperature Co-fired Ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$＜90$0^{\circ}C$ are required. In this study, BaO-N $d_2$ $O_3$-Ti $O_2$ (BNT ： 20∼40 wt％) for ceramic materials and L $a_2$ $O_3$- $B_2$ $O_3$-Ti $O_2$ (LBT ： 80∼60 wt％) for crystallizable glasses were used. The glass/ceramic composites were investigated for sintering behavior, phase evaluation, densities, interface reaction and microwave dielectric properties. It was found that the addition LBT glass frist significantly lowered the sintering temperature to below 90$0^{\circ}C$ and the densification with increasing addition LBT glass frist developed rapidly which was meant to be namely 90％ of relative density. The sintered bodies ekhibited applicable dielectric properties, namely 15 for $\varepsilon$$_{r}$,, 10000 GHz for Q＊ $f_{0}$. The results suggest that the composites have good potential as a new candidate for LTCC materials.

• Journal of Internet Computing and Services
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• v.9 no.3
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• pp.141-158
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• 2008

In this paper, we developed the GML Map Server which visualized the map based on GML as international standard for exchanging the common format map and for interoperability of GIS information. And also, it should transmit effectively GML map into the mobile device by using dynamic map partition and caching. It manages a partition based on the visualization area of a mobile device in order to visualize the map to a mobile device in real time, and transmits the partition area by serializing it for the benefit of transmission. Also, the received partition area is compounded in a mobile device and is visualized by being partitioned again as four visible areas based on the display of a mobile device. Then, the area is managed by applying a caching algorithm in consideration of repetitiveness for a received map for the efficient operation of resources. Also, in order to prevent the delay in transmission time as regards the instance density area of the map, an adaptive map partition mechanism is proposed for maintaining the regularity of transmission time. GML Map Server can trace the position of mobile device with WIPI environment in this paper. The field emulator can be created mobile devices and mobile devices be moved and traced it's position instead of real-world. And we developed POIM(POI Management) for management hierarchically POI information and for the efficiency POI search by using the individual tagging technology with visual interface.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.1
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• pp.43-66
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• 1997

Dental implant may be immediately placed in postextraction socket which has alveolar bone defect. The purpose of this study was to compare the bone regeneration and bone quality around defects adjacent to implants that were placed into extraction sockets according to EFEB, GTAM barrier and GTAM barrier with DFDB. Mandibular P2, P3 and P4 were extracted bilaterally in dogs, and buccal defects were created about 4mm in depth and 3.3mm in width. Screwed pure titanium implants, 3.8mm in diameter and 10mm in length, were placed into the extraction sockets. The experimental groups were divided into four groups : the G group was covered with a GTAM barrier on the defective area, the D+G group was filled with DFEB and covered with a GTAM barrier, the D group was filled with DFDB only and the control group was sutured without any special treatment on the defective area. The experimental animals were killed after 12 weeks and specimens were prepared for light microscopic evaluation and fluorescent dyes were administered daily for 2 weeks after implantation, and injected on the 4th and 11th week for fluorescent microscopic examination to observe new bone formation and bone remodeling. The new Bone height of the buccal defect was measured and compared with the another for bone gain and the removal torque for the implant was measured for the comparison of bone density and bone-implant osseointegration. Results obtained were as follows : 1. Experimental groups showed bone regeneration in oder from D+G, G, D group and control. D+G and G group was significantly from D group and control(P<0.01). 2. In the defective area of control the regenerated alveolar bone showed poorly developed lamellated structure and fibrous tissue intervention into the bone-implant interface but the others showed well developed lamellated structure and osseointegration. 3. All implant groups showed no significaant difference in the removal torque for implant(P>0.05) These results suggest that immediate implants placed in defective sockets were successfully osseointegrated and utilizing placed in defective sockets were successfully osseointegrated and utilizing not only the combination of GTAM and DFDB but also only the GTAM was favorable for the predictable regeneration of the defective area.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.251-259
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• 2005

In order to characterize the influence of the reaction-site density on the cathodic polarization property of LSCF, we chose the porosity of LSCF as a main controlling variable, which is supposed to be closely related with active sites for the cathode reaction. To control the porosity of cathodes, we changed the mixing ratio of fine and coarse LSCF powders. The porosity and pore perimeter of cathodes were quantitatively analyzed by image analysis. The electrochemical half cell test for the cathodic polarization was performed via 3-probe AC-impedance spectroscopy. According to the investigation, the reduction of oxygen at LSCF cathode was mainly controlled by following two rate determining steps; i) surface diffusion and/or ionic conduction of ionized oxygen through bulk LSCF phase, ii) charge transfer of oxygen ion at cathode/electrolyte interface. Moreover, the overall cathode polarization was diminished as the cathode porosity increased due to the increase of the active reaction sites in cathode layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.