• Parasites, Hosts and Diseases
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• v.26 no.3
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• pp.155-162
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• 1988

Surface membrane proteins of virulent RH strain and tissue cyst-forming Fukaya strain of Toxoplasma gondii were analysed by SDS-polyacrylamide gel electrophoresis after LPO-catalyzed surface iodination and lectin blotting, then identified the zoite-specific antigens. Prior to the analyses, purification of RH tachyzoites from mouse peritoneal exudate and of Fukaya bradyzoites from mouse brain tissues were performed by centrifugation - on the discontinuous Percoll density-gradient. Ta- chysoites were obtained at the interface of 50U and 60% Percoll solution and brain cysts were harvested at the interfaces of 40-50% and 50-60%, then bradyzoites were obtained by treating the cysts with hypertonic solution. The LPO-catalyzed iodination detected 15 KDa and 14 KDa proteins o( brady- zoites and 30 KDa protein of tachysoites as major bands with several other minor bands. But Con A blotting revealed some bands of 200 K∼50 KDa glycoproteins of bradyzoites and 52 KDa band as major and minor bands of 33 K∼20 KDa of tachyzoites. Phytohemagglutinin did not detect any band in the two forms. EITB with anti- Fukaya antibody and anti-RH antibody revealed cross-reactivities between the two forms. Despite the cross-reactivity, anti-Fukaya antibody reacted with 15 KDa band of bradyzoites specifically and, anti-RH antibody with 52 KDa, 30 KDa, and 25 KDa bands of tachyzoites, respectively. It was identified that 15 KDa protein in bradyzoite, which was not a glycoprotein, was a major membrane protein with sufficient antigenicity, and in the case of tacky- zoite, 52 KDa surface glycoprotein (gp52) with specific antigenicity might be added to the major surface protein, p30.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.943-948
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• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• Journal of the Korea institute for structural maintenance and inspection
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• v.17 no.5
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• pp.67-76
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• 2013

In this study, the inhibitive effect of electrochemical treatment subjected to fresh and hardened concrete and literature reviews in terms of the treatment were performed. In hardened concrete, chloride ions are mixed during casting to destroy the passivity of steel, and then the current was provided for 2 weeks with 250, 500 and $750mA/m^2$. After completion of electrochemical treatment, the extraction of chloride ions was quantified and repassivation of steel was observed. Simultaneously, the equated levels of current density for 2 weeks were applied to fresh concrete. Steel-concrete interface in concrete was observed by BSE image analysis and the concrete properties in terms of the diffusivity of chloride ions and the resistance of steel corrosion was measured. As the result, electrochemical treatment is very effectiveness to rehabilitate the passive film on the steel surface and 63-73% of chloride ions in concrete were extracted by the treatment. As the treatment was applied to fresh concrete, the resistance of steel corrosion was improved due to the densification of $Ca(OH)_2$ layers in the vicinity of steel. However, an increase in the current density resulted in an increase in surface chloride content of concrete.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.3B
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• pp.247-257
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• 2009

In the present paper, turbulent open-channel flows with alternate vegetated zones are numerically simulated using threedimensional model. The Reynolds-averaged Navier-Stokes Equations are solved with the ${\kappa}-{\varepsilon}$ model. The CFD code developed by Olsen(2004) is used for the present study. For model validation, the partly vegetated channel flows are simulated, and the computed depth-averaged mean velocity and Reynolds stress are compared with measured data in the literature. Comparisons reveal that the present model successfully predicts the mean flow and turbulent structures in vegetated open-channel. However, it is found that the ${\kappa}-{\varepsilon}$ model cannot accurately predict the momentum transfer at the interface between the vegetated zone and the non-vegetated zone. It is because the ${\kappa}-{\varepsilon}$ model is the isotropic turbulence model. Next, the open channel flows with alternate vegetated zones are simulated. The computed mean velocities are compared well with the previously reported measured data. Good agreement between the simulated results and the experimental data was found. Also, the turbulent flows are computed for different densities of vegetation. It is found that the vegetation curves the flow and the meandering flow pattern becomes more obvious with increasing vegetation density. When the vegetation density is 9.97%, the recirculation flows occur at the locations opposite to the vegetation zones. The impacts of vegetation on the flow velocity and the water surface elevation are also investigated.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.412-419
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• 2023

Anion exchange membrane electrolysis is considered a promising next-generation hydrogen production technology that can produce low-cost, clean hydrogen. However, anion exchange membrane electrolysis technology is in its early stages of development and requires intensive research on electrodes, which are a key component of the catalyst-system interface. In this study, we optimized the pressure conditions of the hot-pressing process to manufacture cobalt oxide electrodes for the development of a high uniformity and high adhesion electrode production process for the oxygen evolution reaction. As the pressure increased, the reduction of pores within the electrode and increased densification of catalytic particles led to the formation of a uniform electrode surface. The cobalt oxide electrode optimized for pressure conditions exhibited improved catalytic activity and durability. The optimized electrode was used as the anode in an AEMWE single cell, exhibiting a current density of 1.53 A cm^-2 at a cell voltage of 1.85 V. In a durability test conducted for 100 h at a constant current density of 500 mA cm^-2, it demonstrated excellent durability with a low degradation rate of 15.9 mV kh^-1, maintaining 99% of its initial performance.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.1
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• pp.58-65
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• 2005

The $LaCrO_3$-dispersed Cr alloys for metallic interconnect of solid oxide fuel cell were prepared as a function of $LaCrO_3$ content in the range of 5 to 25 vol.% and were sintered at 1500$^{\circ}C$ under an Ar atmosphere with 5 vol.% $H_2$. The sintering and oxidation behaviors of these alloys were examined. The alloys indicated a good sinterability above 95% relative density at a given sintering condition, and their sintering densities is independent on $LaCrO_3$ content. The $LaCrO_3$ particles of the sintered alloys were concentrated on interfaces of Cr particles, and the size of the Cr particles increased with decreasing $LaCrO_3$ content, which is caused by inhibited grain growth of Cr particle by $LaCrO_3$ particle. The oxidation test showed all $LaCrO_3$-dispersed Cr alloys have good oxidation resistance as compared with pure Cr, which is attributed to presence of $LaCrO_3$ at the interface at which the oxidation reaction occurs rapidly. The Cr alloys with about 15 vol.% $LaCrO_3$ are very resistant to oxidation.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.162-167
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• 1999

GaN epilayers deposited by the OMVPE method on sapphires with 3 different surface orientations were investigated by TEM and their difference in mucrostructure were compared with each other. GaN epilayers were grown on the all three kinds of sapphire substrates; however, the best interfacial state and crystallinity were observed in the specimen using a {0001} substrate The density of defects in GaN epilayers on {0001} substrates was also less than others. No buffer layer was found at the interfaces of all the specimens; however, it was observed that the region which shows lattice distortion at the interface was only a few nonameter wide. Accordingly, TEM investigation revealed that GaN epilayers having some internal defects could be grown on sapphire {1120} and {1102} planes without a buffer layer, and the hetero-epitaxial GaN films were obtained from the specimen using {0001} substrates with the microstructural point of view.