• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Solar Energy
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• v.20 no.1
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• pp.11-20
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• 2000

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.

• Journal of Korea Multimedia Society
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• v.24 no.7
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• pp.903-912
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• 2021

Eye tracking research for upper limb disabilities is showing an effect in the aspect of device control. However, the reality is that it is not enough to perform web interaction with only eye tracking technology. In the Eye-Voice interface, a previous study, in order to solve the problem that the existing gaze tracking interfaces cause a malfunction of pointer execution, a gaze tracking interface supplemented with a voice command was proposed. In addition, the reduction of the malfunction rate of the pointer was confirmed through a comparison experiment with the existing interface. In this process, the difficulty of pointing due to the small size of the execution object in the web environment was identified as another important problem of malfunction. In this study, we propose an auto-magnification interface of objects so that people with upper extremities can freely click web contents by improving the problem that it was difficult to point and execute due to the high density of execution objects and their arrangements in web pages.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.807-813
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• 1986

Measurements of interface states in a MOS capacitor by DLTS system using wideband monophase lock-in amplifier are discussed. A new signal analysis method that takes into account the bias pulse width and the gate off width is presented to remove the errors in the measured parameters of interface states resulting from the traditional method which neglects the effect of those widths. Theoretical calculations are made for the parameters related to the rate window, signal to noise ratio, and the energy resolution. On the grounds of this discussion, interface states of the MOS capacitor on p-type substrate of (110) orentation are measured with the optimal gate-off width with respect to the S/N ratio and the energy resolution. The results are interface state density of the order of 10**10 (cm-\ulcornereV**-1) to 10**11 (cm-\ulcornereV**-1) in the energy range of Ev+0.15(dV) to Ev+0.5(eV), and constant capture cross section of the order of 10**-16 (cm\ulcorner.

• Structural Engineering and Mechanics
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• v.86 no.4
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• pp.535-546
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• 2023

In the present paper, multiple interface cracks between a functionally graded orthotropic coating and an orthotropic half-plane substrate under concentrated loading are considered by means of the distribution dislocation technique (DDT). With the use of integration of Fourier transform the problem is reduced to a system of Cauchy-type singular integral equations which are solved numerically to compute the dislocation density on the surfaces of the cracks. The distribution dislocation is a powerful method to calculate accurate solutions to plane crack problems, especially this method is very good to find SIFs for multiple unequal cracks located at the interface. Hence this technique allows considering any number of interface cracks. The primary objective of this paper is to investigate the effects of the interaction of multiple interface cracks, load location, material orthotropy, nonhomogeneity parameters and geometry parameters on the modes I and II SIFs. Numerical results show that modes I/II SIFs decrease with increasing the nonhomogeneity parameter and the highest magnitude of SIF occurs where distances between the load location and crack tips are minimal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Structural Engineering and Mechanics
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• v.30 no.3
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• pp.317-330
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• 2008

Stress intensity factors for a planar crack parallel to a bimaterial interface are considered. The formulation leads to a system of hypersingular integral equations whose unknowns are three modes of crack opening displacements. In the numerical analysis, the unknown displacement discontinuities are approximated by the products of the fundamental density functions and polynomials. The numerical results show that the present method yields smooth variations of stress intensity factors along the crack front accurately. The mixed mode stress intensity factors are indicated in tables and figures with varying the shape of crack, distance from the interface, and elastic constants. It is found that the maximum stress intensity factors normalized by root area are always insensitive to the crack aspect ratio. They are given in a form of formula useful for engineering applications.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1683-1688
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• 2007

This paper presents a novel simple method for introducing gold nanoparticles in a poly(4-vinylpyridine) (PVP) polymer layer over a glassy carbon (GC) electrode with the aim of forming a tunable electrochemical interface against a cationic ruthenium complex. Initially, AuCl4 ? ions were spontaneously incorporated into a polymer layer containing positively charged pyridine rings in an acidic media by ion exchange. A negative potential was then applied to electrochemically reduce the incorporated AuCl4 ? ions to gold nanoparticles, which was confirmed by the FE-SEM images. The PVP layer with an appropriate thickness over the electrode blocked electron transfer between the electrode and the solution phase for the redox reactions of the cationic Ru(NH3)6 2+ ions. However, the introduction of gold nanoparticles into the polymer layer recovered the electron transfer. In addition, the electron transfer rate between the two phases could be tuned by controlling the number density of gold nanoparticles.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.57-63
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• 2009

Interface friction in blanking dies, cold forging and extrusion of aluminum alloys is a major cause of inefficient process. This paper describes an investigation of femtosecond laser texturing for reduction of interface friction on sliding surfaces in forming process. Femtosecond direct writing technology was used to fabricate a laser micro-machined die and to create microgroove patterns with varying size and density on metal forming dies. A systematic approach to find the optimum parameters and computer simulation comparison of friction coefficients are provided to study the relation of friction coefficients and die profiles. In metal forming tests, the effectiveness of various laser-machined patterns for enhancing interface lubrication is determined.