• Title/Summary/Keyword: Degree of ionization

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Screening and broadening effects on the mobilities for p-type Si and Ge (Screening 현상 및 broadening 현상이 p형 Si과 Ge의 이동도에 미치는 효과)

  • 전상국
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.581-588
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    • 1997
  • The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

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The Study on Emission Spectrum Characteristics of Atmosphere Pressure Plasma (상압 플라즈마의 광 방출 스펙트럼 특성조사에 관한 연구)

  • Park, Sung-Jin
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.2
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    • pp.77-83
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    • 2013
  • In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

Analysis of Textbook Contents and Chemistry Teachers' Cognition about Species of Strong Acid in Water (강산 수용액에서의 화학종에 대한 교과서 내용 및 화학 교사의 인식 분석)

  • Go, Hyung-Suk;Kim, Kyung-Eun;Paik, Seoung-Hey
    • Journal of the Korean Chemical Society
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    • v.56 no.5
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    • pp.628-637
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    • 2012
  • In this research, the textbook contents related to the ionization degree of strong acid in water were analyzed from 1945 year syllabus to chemistry II textbook in 2009 revised curriculum. Fifty chemistry teachers' cognition related to the species of strong acid in water, and the relationship between the degree of ionization was surveyed by a questionnaire and interviews. As results, most of the teachers thought the species of strong acid in water based on the degree of ionization represented on the chemistry II textbooks. They didn't recognize the conflict of the degree of ionization and definition of strong acid on the textbooks, and then they awakened the conflict, they could not solve the problem.

Variation of Dose due to the Wound Electrode of Ionization Chamber (굴곡이 있는 전리함 집전극에 기인한 선량 변화)

  • Lee, Byung-Koo;Kim, Jung-Nam
    • The Journal of the Korea Contents Association
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    • v.8 no.11
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    • pp.203-209
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    • 2008
  • Nowadays the risk of radiation is getting more serious, so we must know the exact dose that was irradiated, Because very high radiation dose is used in radiation therapy field. We used the ionization chamber which measure the radiation dose in this study. We tried to know the incorrect result from the distortion of geometric structure of ionization chamber and we studied how to find the distortion of geometric structure of ionization chamber. We used a radio fluoroscopy to find the wound degree of electrode of ionization chamber and a reconstructed 3D CT image to analyze the wound degree of electrode quantitatively. we measured degree of distortion by comparing with absorbed dose of normal electrode and wound electrode. The comparative result is not absolute dosimetry at specific point but relative dosimetry between thats. We measured 4 MV, 10MV photon with same absorbed dose and dose rate. The degree of distortion of wound electrode was totally $5.5{\sim}7.2%$, and there was no difference between two energies. The variation induced from radiation dose to be irradiated and dose rate, and the degree of distortion from wound direction also was almost similar value. We could find that the geometric structure of ionization chamber that can influence a basic measurement of radiation dose can be changed by old usage and inattention of management in this study, especially winding of electrode can be happened, in radiation therapy field, It is very important to keep precise radiation dose quantitatively.

Ionization of Hydrogen in the Solar Atmosphere

  • Chae, Jongchul
    • Journal of Astronomy and Space Sciences
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    • v.38 no.2
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    • pp.83-92
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    • 2021
  • The ionization degree of hydrogen is crucial in the physics of the plasma in the solar chromosphere. It specifically limits the range of plasma temperatures that can be determined from the Hα line. Given that the chromosphere greatly deviates from the local thermodynamic equilibrium (LTE) condition, precise determinations of hydrogen ionization require the solving of the full set of non-LTE radiative transfer equations throughout the atmosphere, which is usually a formidable task. In many cases, it is still necessary to obtain a quick estimate of hydrogen ionization without having to solve for the non-LTE radiative transfer. Here, we present a simple method to meet this need. We adopt the assumption that the photoionizing radiation field changes little over time, even if physical conditions change locally. With this assumption, the photoionization rate can be obtained from a published atmosphere model and can be used to determine the degree of hydrogen ionization when the temperature and electron density are specified. The application of our method indicates that in the chromospheric environment, plasma features contain more than 10% neutral hydrogen at temperatures lower than 17,000 K but less than 1% neutral hydrogen at temperatures higher than 23,000 K, implying that the hydrogen temperature determined from the Hα line is physically plausible if it is lower than 20,000 K, but may not be real, if it is higher than 25,000 K. We conclude that our method can be readily exploited to obtain a quick estimate of hydrogen ionization in plasma features in the solar chromosphere.

Infrared Spectroscopic Studies on the Ionization of Perfluorostearic Acid (적외선 분광법을 이용한 Perfluorostearic Acid의 이온화 연구)

  • Kim, Uk-Soo;Ha, Ki-Ryong
    • Applied Chemistry for Engineering
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    • v.19 no.1
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    • pp.111-116
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    • 2008
  • Collapsed perflurostearic acid (PFS) films were prepared on the different pH and the various metal ion ($Na^+$, $Ca^{2+}$, $La^{3+}$) containing subphase using Langmuir-Blodgett (LB) trough. The degree of ionization of collapsed PFS film formed from floating monolayer has been determined by Fourier transform infrared (FTIR) spectroscopy. The intensity of C = O of -COOH peaks of collapsed PFS decreased with increasing pH of subphase. The order of ionization of collapsed PFS on the subphase of the same pH was $La^{3+}$ > $Ca^{2+}$ > $Na^+$. The degree of ionization of collapsed PFS on the Deionized (D.I.) water subphase is above 50% even at subpahse pH 3, which is much higher degree of ionization than that of stearic acid.

PROPERTIES OF PIB-CU FILMS ACCELERATION VOLTAGE AND IONIZATION POTENTIAL

  • Kim, K.H.;Jang, H.G.;Han, S.;Choi, S.C.;Choi, D.J.;Jung, H.J.;Koh, S.K.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.570-576
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    • 1996
  • Cu films for future ULSI metallization were prepared by partially ionized beam (PIB) deposition and characterized in terms of preferred orientation, grain size, roughness and resistivity. PIB-Cu films were prepared on Si (100) at pressure of $8 \times 10^{-7}$~$1 \times 10^{-6}$ Torr. Effects of acceleration voltage and ionization potential on the properties of PIB-Cu films have been investigated. As the acceleration voltage increased at constant ionization potential of 400 V, the degree of preferred orientation and surface smoothness of the Cu film increased. At the ionization potential of 450 V, the degree of preferred orientation at the acceleration voltage higher than 2 kV decreased and surface roughness increased with acceleration voltage. Grain size of Cu films increased to 1100 $\AA$ initially up to applied acceleration voltage of 1 kV, above which a little increase occurred with the acceleration voltage. There was no indication of impurities such as C, O in all sample. Resistivity of Cu film had the same trends as the surface roughness with acceleration voltage and ionization potential. The increase of electrical resistivity of PIB-Cu films was explained in terms of grain size and surface roughness

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CHARGE EXCHANGE EFFECTS IN COLLISIONAL IONIZATION EQUILIBRIUM OF C, N, AND O IONS (탄소, 질소 및 산소의 충돌이온화평형에서의 전하교환 효과)

  • Seon, Kwang-Il
    • Journal of Astronomy and Space Sciences
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    • v.21 no.4
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    • pp.343-350
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    • 2004
  • The charge exchange (or transfer) due to collision with hydrogen has important effects on the physical characteristics of astrophysical plasma. In this paper, collisional ionization equilibrium in the temperature range of ${\sim}1,000--80,000K$ are investigated for C, N, and O ions including the effects of charge exchange. The calculated ionic abundance fractions are compared with those of previous works. The ionic abundance fractions calculated in the paper can be used in understanding the spectroscopic properties of warm interstellar medium. It is also found that the ratio between the degree of ionization of oxygen and that of hydrogen shows big difference with the previously well-known result for the environment where the collisional ionization is not important. This implies that investigations on the collisional ionization in the warm interstellar medium are required.

Study of the Mobility for Strained p-type $Si_{1-x}Ge_x$ Alloys (변형 힘을 받는 p형 $Si_{1-x}Ge_x$의 이동도 연구)

  • 전상국
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.3
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    • pp.181-187
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    • 1998
  • The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

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