• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1254-1257
• /
• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• Journal of information and communication convergence engineering
• /
• v.5 no.3
• /
• pp.259-264
• /
• 2007

According to the development and wide use of broad band internet etc., diverse application technologies using large capacity data such as images have been progressed and in these systems, for accurate acquisition and precise applications of an original signal, the degradation phenomenon generated in the transmission process etc. should be removed. Noises have become known as the main cause of the degradation phenomenon and especially Gaussian noise represents characteristics occurring dependently in image signals and degrades detail information such as edge. In this paper, we removed Gaussian noise using a subdivided nonlinear function according to a threshold value and analyzed the histogram acquired from an edge image to establish a threshold value adaptively, and strengthened detail information of image by using the postprocessing. In simulation results, the proposed method represented excellent performance from comparison of MSE with existing methods.

• Journal of Conservation Science
• /
• v.36 no.1
• /
• pp.15-27
• /
• 2020

The Main Hall of the Fengguo monastery in Yixian county, Liaoning province, China, is the best preserved and largest wooden Buddhist structure, typical of the Liao dynasty style, in China. However, some degradation to the timber frame of the Main Hall has been noted, and this is causing concern in terms of the long-term preservation of the structure. In this study, wooden pillars showing the degradation phenomena of whitening, for areas in contact with the stone floor, and extensive surface damage at higher locations(mostly above 1 m) have been examined. Samples taken from wooden pillar surfaces were analyzed using X-ray powder diffraction, Fourier-transform infrared spectroscopy(FTIR), ion chromatography, and pH measurements. With respect to the whitening phenomenon, we found inorganic calcium precipitates and oxalate ions, along with higher pH values. These symptoms indicated that chemical changes were taking place in response to alkaline conditions, suggesting that alkaline mixtures with calcium content in the foundations may be responsible. Regarding the upper surface-damaged areas, no valid evidence for chemical degradation was found using FTIR analysis, while damaged areas exhibited the presence of more bat guano-related materials than which were apparent in undamaged areas. The occurrence of this surface-damaged phenomenon has therefore been attributed to physical damage caused by bat activity over long periods of time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.96-99
• /
• 2005

As the demand of internet networks using backbone communication systems recently increased, the researches on the high-speed wideband optical communication systems are required. For high-speed optical communication systems, asymmetric sampled grating distributed feedback laser diodes (DFB-LDs) are developed and the reliability of DFB-LDs is examined. The reliability of DFB-LDs is performed by monitoring I-V and L-I characteristics and two degradation phenomena related to the electrical characteristics of LDs are observed during the life tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operation in lateral blocking layer near active region of lasers. The second degradation phenomenon by decreasing the forward current is considered as activation of non-radiative Auger recombination process by thermal energy and the second degradation phenomenon is recovered after the off-test period at room temperature Eventually, evaluating the reliability of DFB LDs can allow us to improved the manufacturability in high-volume manufacturing.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1258-1261
• /
• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Journal of Korean Society for Quality Management
• /
• v.32 no.1
• /
• pp.113-129
• /
• 2004

The reliability of the product can be improved by making the product less sensitive to noises. Especially, it Is important to make products robust against various noise factors encountered in production and field environments. In this paper, the phenomenon of degradation assumes a simple random coefficient degradation model to present analysis procedures of degradation data for robust experimental design. To alleviate weak points of previous studies, such as Taguchi's, Wasserman's, and pseudo failure time methods, novel techniques for analysis of degradation data using the cross array that regards amount of degradation as a dynamic characteristic for time are proposed. Analysis approach for degradation data using robust experimental design are classified by assumptions on parametric or nonparametric degradation rate(or slope). Also, a simulation study demonstrates the superiority of proposed methods over some previous works.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.157-160
• /
• 2001

Three sets of ZnO ceramic devices (reference samples with Matsuoka\`s composition; added 7o MgO, A1$_2$O$_3$, SiO$_2$) have been prepared by the conventional mixed oxide route. These additives were determined by the factors of valences and ionic radiuses. DC accelerated degradation test was performed for analysis of degradation characteristics versus the various additives. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the Phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine ${\alpha}$. Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.427-430
• /
• 2001

The degradation characteristics versus MgO Additive for the ZnO ceramic devices fabricated by the standard ceramic techniques is investigated in this study. It were made these devices be basic Matsuoka's composition. Especially, MgO were added to analyze the degradation characteristics and sintered in air at 1300$^{\circ}C$. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. The elemental analysis in the microstructures was used by EDS, E-J analysis was used to determine ${\alpha}$ . Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.978-980
• /
• 1999

In this paper, DC degradation of ZnO varistor sintered in the atmospheres of nitrogen and oxygen was investigated. The content of $SiO_2$ containing 0.0, 0.2, 0.5 mol% respectively was addicted for the improvement of degradation property. ZnO varistor was fabricated in the special electrical furnace which had the vacuum system. The temperature and the voltage for the DC degradation test were $115{\pm}2^{\circ}C$, $0.85V_{1mA/cm^2}$. The time conditions for this test were 0, 2, 4, 8 hours and Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are accomplished for the understanding of electrical properties as DC degradation test. In this experiment, We concluded that nonlinear coefficient decreased as the amount of $SiO_2$ addition increased, but degradation rate coefficient increased as the amount of $SiO_2$ addition increased. Also, degradation test with the analysis of equivalent circuit showed that the degradation phenomenon of ZnO varistor wasn't linearity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.5
• /
• pp.383-389
• /
• 2000

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made o matsuoka’s composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. Gases used in sintering process were oxygen nitrogen argon and air. Using XRD and SEM the phase and microstructure of samples were analyzed respectively. The conditions of DC degradation tests were conducted at 115$\pm$2$^{\circ}C$ for 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are performed to understand electrical properties as DC degradation test. From above analysis it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test and degradation phenomenon of ZnO varistor is caused by the change of electrical properties in grain boundary. These results are in accordance with Gupta’s degradation model.