• Journal of the Semiconductor & Display Technology
• /
• v.3 no.2
• /
• pp.5-9
• /
• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.34 no.6
• /
• pp.435-440
• /
• 2014

Contact-guided-wave tests are impractical for investigating specimens with limited accessibility and rough surfaces or complex geometric features. A non-contact setup with a laser-ultrasonic transmitter and receiver is quite attractive for guided-wave inspection. In the present work, we developed a non-contact guided-wave tomography technique using the laser-ultrasonic technique in a plate. A method for Lamb-wave generation and detection in an aluminum plate with a pulsed laser-ultrasonic transmitter and Michelson-interferometer receiver was developed. The defect shape and area in the images obtained using laser scanning, showed good agreement with the actual defect. The proposed approach can be used as a non-contact online inspection and monitoring technique.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.1
• /
• pp.56-64
• /
• 2006

This paper proposes a new and simple input prediction method for robust servo system. A robust tracking control system for optical disk drives to reject disk runout was recently proposed based on both Coprime Factorization(CF) and Zero Phase Error Tracking(ZPET) control. The CF control system can be designed simply and systematically. Moreover, this system has not only stability but also robustness to parameter uncertainties and disturbance rejection capability. Since optical disk tracking servo systems can detect only racking error, it was proposed that the reference input signal for ZPET could be estimated from tracking errors. In this paper, we propose a new control structure for the ZPET controller. It requires less memory than the previously proposed method for the reference signal generation. Therefore, it is very effective in runout control. Furthermore, this method can be applied to defective optical disk like surface defects on disk. Numerical simulation and experimental result show the proposed method effective.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2022.10a
• /
• pp.168-169
• /
• 2022

As the electric vehicle market has grown rapidly, the battery market has grown exponentially. Due to the gap between the generation speed of quality control technology and battery mass production speed for batteries mounted on electric vehicles, many durability problems have arisen for batteries. Most accidents are caused by electrical factors, but there is no technology to quickly inspect them. In this paper, we are going to propose a quick analysis of battery cell defects using the GAN model.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.2
• /
• pp.60-64
• /
• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.1 s.173
• /
• pp.173-181
• /
• 2000

Depending upon the method of the surface generation and the quality of the boundary curves provided, the resulting surfaces may have global or local irregularities in many cases. Thus it would be necessary for the designer to evaluate the surface quality and to modify the surface. This capability is very important because the defect of the surface requires the rework of the dies that causes a big loss in cost and delivery time. To simulate the reflection line test in the actual production line, a faster generation algorithm is presented. Among., various surface interrogation methods using reflection lines, Blinn-Newell type of reflection mapping is applied to generate reflection lines on the trimmed NURBS surface. The generation of reflection lines is formulated as a surface-plane intersection problem, and solved by surface-contouring techniques. In addition, a modified reflection map is proposed to eliminate the discontinuity of reflection lines due to the configuration of the reflection map. A fast reflection line algorithm is developed utilizing an efficient traced contouring technique, and proved to be well suited for real-time quality-assessment task.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2007.11a
• /
• pp.350-353
• /
• 2007

In this study, the genetic algorithm has been used for the real-time defect diagnosis on the operation of the aircraft gas-turbine engine. The component elements of the gas-turbine engine for consideriation of the performance deterioration is consist of the compressor, the gas generation turbine and the power turbine, repectively. Compared to the on-design point on the sea-level condition, the learning data has been increased 200 times in case of the off-design conditions for the altitude, the flight mach number and the fuel consumption. Therefore, enormous learning time has been required for the satisfied convergence. The optimum division has been proposed to decrease learning time as well as to obtain high accuracy. As results, the RMS errors of the defect diagnosis using the genetic algorithm have been estimated under 5 %.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.3 no.3
• /
• pp.165-169
• /
• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.28 no.2
• /
• pp.118-126
• /
• 2006

In oral and maxillofacial surgery, bone graft is very important procedure for functional and esthetic reconstruction. So, many researcher studied about bone graft material like autogenous bone, allograft bone and artificial bone materials. The purpose of this study is to evaluate the quantity of bone generation induced by $Grafton^{(R)}$ graft, human allogenic demineralized bone matrix. Total 24 sites of artificial bony defects prepared using trephin bur(diameter 8 mm) on parietal bone of six adult New Zealand White rabbits. Experimental group had six defect sites which grafted $Grafton^{(R)}$(0.1 cc). Active control group had nine defect sites, into which fresh autogenous bone harvested from own parietal bone was grafted and passive control group had nine defect sites without bone graft. After six weeks postoperatively, the rabbits were sacrificed. The defects and surrounding tissue were harvested and decalcified in 10% EDTA, 10% foamic-acid. Specimens were stained with H&E. New bone area percentage in whole defect area was measured by IMT(VT) image analysis program. Quantity of bone by $Grafton^{(R)}$ graft was smaller than that of autograft and larger than that of empty defects. In histologic view $Grafton^{(R)}$ graft site and autograft site showed similar healing progress but it was observed that newly formed bone in active control group was more mature. In empty defect, quantity and thickness of new bone formation was smaller than in $Grafton^{(R)}$-grafted defect. $Grafton^{(R)}$ is supposed to be a useful bone graft material instead of autogenous bone if proper maintenance for graft material stability and enough healing time were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.489-492
• /
• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.