• Journal of Chest Surgery
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• v.13 no.4
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• pp.442-447
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• 1980

A 8-year-old boy underwent surgical correction of complete transposition S.D.D. of great arteries combined with subaortic ventricular septal defect and pulmonary stenosis [infundibular and valvular]. The operation consisted of an internal baffling connecting the left ventricle to the aorta through the ventricular septal defect. The pulmonary stenosis was corrected with the method of external connection, the right ventricle to the pulmonary artery using the conduit valve [20 mm] contained Hancock due to abnormal distribution of left coronary artery of which conduit due to abnormal distribution of left coronary artery of which the circumflex branch crossed the portion of right ventricular outflow tract. This case was suitable for corrective surgery-Rastelli operation-and the patient`s condition in very good until present [post-operative 5 months].

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.42-45
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• 2002

General wheel mark in mono-crystalline silicon wafer finding is able to be expected because it depends on radius ratio and angular velocity ratio of wafer and wheel. The pattern is predominantly determined by the contour of abrasive grits resulting from a relative motion. Although such a wheel mark is made uniform pattern if the process parameters are fixed, sub-surface defect is expected to be distributed non-uniformly because of characteristic of mono-crystalline silicon wafer that has diamond cubic crystal. Consequently it is considered that this phenomenon affects the following process. This paper focused on kinematic analysis of wafer grinding process and simulation program was developed to verify the effect of process variables on wheel mark. And finally, we were able to predict sub-surface defect distribution that considered characteristic of mono-crystalline silicon wafer

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.334-335
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• 2006

Solid insulation exposed to voltage is degraded by electrical tree process. And the degradation of the insulation is accelerated by voltage application. For this experimental, specimen of electrical tree model is made by XLPE (cross-linked polyethylene). And the size of the specimen is 7*5*7 $mm^3$. Distance of needle and plane is 2 mm. Voltages applied for acceleration test are 12 kV to 15 kV. And distribution characteristic of degraded stage is studied too. As a PD detecting and data process, discharge data acquire from PD detecting system (Biddle instrument). The system presents statistical distribution as phase resolved. Moreover the processing time of electrical tree is recorded to know the speed of degradation according to voltage.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2011.06a
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• pp.185-185
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• 2011

CNCO-W 케이블의 절연결함 형태의 추정을 위해 곡률반경은 10 ${\mu}m$의 침(needle) 및 트래킹(tracking) 결함을 모의하고 부분방전 펄스의 위상분포를 분석하였다. 트래킹 결함에서는 $40^{\circ}{\sim}120^{\circ}$ 및 $200^{\circ}{\sim}285^{\circ}$에 분포하였으며, 침 결함과 비교하여 트래킹 결함에서는 펄스수가 증가하였으며, 정극성에서 넓게 분포하였다.

• Current Applied Physics
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• v.18 no.11
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• pp.1447-1450
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• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

• The Journal of Advanced Prosthodontics
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• v.8 no.3
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• pp.229-234
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• 2016

PURPOSE. The purpose of this study was to investigate the demographic patterns of maxillofacial prosthetic treatment to identify the characteristics and geographic distribution of patients with maxillofacial prosthetics in the capital region of Korea. MATERIALS AND METHODS. This retrospective analytical multicenter study was performed by chart reviews. This study included patients who visited the department of prosthodontics at four university dental hospitals for maxillofacial prosthetic rehabilitation. Patients with facial and congenital defects or with insufficient medical data were excluded. The patients were classified into three categories based on the location of the defect. Patients' sex, age, and residential area were analyzed. Pearson's chi-square test with a significance level of 0.05 was used to analyze the variables. RESULTS. Among 540 patients with maxillofacial prosthetics, there were 284 (52.59%) male patients and 256 (47.41%) female patients. The number of the patients varied greatly by hospital. Most patients were older than 70, and the most common defect was a hard palate defect. Chi-square analysis did not identify any significant differences in sex, age, and distance to hospital for any defect group (P>.05). CONCLUSION. The results of this study indicated that there was imbalance in the distribution of patients with maxillofacial prosthetic among the hospitals in the capital region of Korea. Considerations on specialists and insurance policies for the improvement of maxillofacial prosthetics in Korea are required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.49-51
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• 2009

Photonic crystal is a dielectric materials or a set of different dielectric materials with periodic structure of refractive index. Line defect obtained by leaving out a row of rod along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found a small group velocity. Characteristic of the small group velocity described by electric field distribution. As the phase variation, small group velocity confirmed from positive to negative.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.46-52
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• 1993

The estimation of yield for semiconductor devices requires not only establishment of critical area but also a new parameter of process defect density that contains inspection mean defect density related cleanness of manufacure process line, minimum feature size and the total number of mask process. We estimate the repaired yield of memory devide, leads the semiconductor technique, repaired by redundancy scheme in relation with defect density distribution function, and we confirm the repaired yield for different devices as this model. This shows the possibility of the yield estimation as statistical analysis for the condition of device related cleanness of manufacture process line, design and manufacture process.

• Journal of the Korean Society for Nondestructive Testing
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• v.35 no.6
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• pp.407-413
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• 2015

Ultrasonic infrared thermography is an active thermography methods. In this method, mechanical energy is introduced to a structure, it is converted into heat energy at the defects, and an infrared camera detects the heat for inspection. The heat generation mechanisms are dependent on many factors such as structure characteristics, defect type, excitation method and contact condition, which make it difficult to predict heat distribution in ultrasonic infrared thermography. In this paper, a method to simulate frictional heating, known to be one of the main heat generation mechanisms at the closed defects in metal structures, is proposed for ultrasonic infrared thermography. This method uses linear vibration analysis results without considering the contact boundary condition at the defect so that it is intuitive and simple to implement. Its advantages and disadvantages are also discussed. The simulation results show good agreement with the modal analysis and experiment result.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.370-374
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• 2005

Doppler broadening spectrometer for positron annihilation experiment(DBPAS) has been used to characterize nano size defect structures in materials. DBPAS measures the concentration, spatial distribution, and size of open volume defects in the rare-earth intensifying screen materials. The screens were exposed by X-ray varying the exposed doses from 3, 6, 9, and 12 Gy with 6 W and 15 MV respectively and also irradiated by 37 MeV proton beams ranging from 0 to $10^{12}ptls$. The S parameter values increased as the exposed time and the energies increased, which indicated the defects were generated more. The S parameters of the samples with X-rays varied from 0.5098 to 0.5108, on the other hand, as proton beams varied from 0.4804 to 0.4821.