• 제목/요약/키워드: Defect distribution

검색결과 352건 처리시간 0.025초

AOI 데이터를 이용한 효과적인 Defect Size Distribution 구축방법: 반도체와 LCD생산 응용 (Effective Construction Method of Defect Size Distribution Using AOI Data: Application for Semiconductor and LCD Manufacturing)

  • 하정훈
    • 산업공학
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    • 제21권2호
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    • pp.151-160
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    • 2008
  • Defect size distribution is a probability density function for the defects that occur on wafers or glasses during semiconductor/LCD fabrication. It is one of the most important information to estimate manufacturing yield using well-known statistical estimation methods. The defects are detected by automatic optical inspection (AOI) facilities. However, the data that is provided from AOI is not accurate due to resolution of AOI and its defect detection mechanism. It causes distortion of defect size distribution and results in wrong estimation of the manufacturing yield. In this paper, I suggest a size conversion method and a maximum likelihood estimator to overcome the vague defect size information of AOI. The methods are verified by the Monte Carlo simulation that is constructed as similar as real situation.

히스토그램 분포 모델링 기반 TFT-LCD 결함 검출 (TFT-LCD Defect Detection based on Histogram Distribution Modeling)

  • 구은혜;박길흠;이종학;류강수;김정준
    • 한국멀티미디어학회논문지
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    • 제18권12호
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    • pp.1519-1527
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    • 2015
  • TFT-LCD automatic defect inspection system for detecting defects in place of the visual tester does pre-processing, candidate defect pixel detection, and recognition and classification through a blob analysis. An over-detection result of defects acts as an undue burden of blob analysis for recognition and classification. In this paper, we propose defect detection method based on the histogram distribution modeling of TFT-LCD image to minimize over-detection of candidate defective pixels. Primary defect candidate pixels are detected estimating the skewness of the luminance distribution histogram of the background pixels. Based on the detected defect pixels, the defective pixels other than noise pixels are detected using the distribution histogram model of the local area. Experimental results confirm that the proposed method shows an excellent defect detection result on the image containing the various types of defects and the reduction of the degree of over-detection as well.

광섬유 표면의 기계적 손상에 대한 잔류응력 분포의 변화 (Gradient of the Residual Stress distribution in the Mechanical Defect on the Optical Fiber Surface)

  • 신인희;김덕영
    • 한국광학회:학술대회논문집
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    • 한국광학회 2005년도 하계학술발표회
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    • pp.206-207
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    • 2005
  • The gradient of the residual stress distribution in the mechanical defect on the optical fiber surface was investigated. This gradient of the residual stress distribution appeared in both of the core and the clad of the mechanical defect region on the optical fiber. The residual stress measurement was suggested as a investigation method of the mechanical defect on the optical fiber.

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명암도 분포 및 형태 분석을 이용한 효과적인 TFT-LCD 필름 결함 영상 분류 기법 (An effective classification method for TFT-LCD film defect images using intensity distribution and shape analysis)

  • 노충호;이석룡;조문신
    • 한국멀티미디어학회논문지
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    • 제13권8호
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    • pp.1115-1127
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    • 2010
  • TFT-LCD 생산 과정에서 발생하는 결함을 정확하게 분류하여 결함 유형에 따라 폐기, 사용가능 등의 의사결정을 적절하게 내리는 것은 수율 증가 및 생산성 향상에 필수적인 요소이다. 본 논문에서는 TFT-LCD 생산 라인에서 획득한 결함 영상에 대하여 명암도 분포(intensity distribution) 및 결함 영상의 형태 특징(shape feature)을 분석하여 효과적으로 필름 결함 유형을 분류하는 기법을 제시한다. 본 연구에서는 먼저 필름 결함 영상을 결함 영역과 결함이 아닌 배경 영역으로 이진화하고, 결함 영역에서 결함의 선형성(linearity), 명암도 분포를 고려한 형태 특징 등의 여러 가지 특징을 분석하여 기준 영상(referential image) 데이터베이스를 구축하였으며, 분류하고자 하는 결함 영상과 데이터베이스에 저장된 기준 영상과의 매칭 비용 함수(matching cost function)를 정의하여 적절히 매칭시킴으로써 결함의 유형을 결정하였다. 제시한 기법의 성능을 검증하기 위하여 실제 TFT-LCD 생산 라인에서 획득한 결함 영상들을 대상으로 분류 실험을 수행하였으며, 실험 결과 생산 라인에서 이용할 수 있을 정도의 상당한 수준의 분류 정확도를 달성하였음을 보여주었다.

API 5L X65 배관의 신뢰도 평가를 위한 파열압력 분포 추정에 관한 연구 (A Study on the Estimating Burst Pressure Distributions for Reliability Assessment of API 5L X65 Pipes)

  • 김성준;김도현;김철만;김우식
    • 품질경영학회지
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    • 제48권4호
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    • pp.597-608
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    • 2020
  • Purpose: The purpose of this paper is to present a probability distribution of the burst pressure of API 5L X65 pipes for the reliability assessment of corroded gas pipelines. Methods: Corrosion is a major cause of weakening the residual strength of the pipe. The mean residual strength on the corrosion defect can be obtained using the burst pressure code. However, in order to obtain the pipe reliability, a probability distribution of the burst pressure should be provided. This study is concerned with estimating the burst pressure distribution using Monte Carlo simulation. A response surface method is employed to represent the distribution parameter as a model of the corrosion defect size. Results: The experimental results suggest that the normal or Weibull distribution should be suitable as the probability distribution of the burst pressure. In particular, it was shown that the probability distribution parameters can be well predicted by using the depth and length of the corrosion defect. Conclusion: Given a corrosion defect on the pipe, its corresponding burst pressure distribution can be provided at instant. Subsequently, a reliability assessment of the pipe is conducted as well.

ESPI 를 이용한 곡관 감육 결함부의 변형률 분포 측정 (Strain Distribution Measurement for Wall Thinning Defect in Pipe Bends by ESPI)

  • 아흐터나심;김경석;정성욱;박종현;최정석;정현철
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.120-125
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    • 2007
  • Put Abstract text here The strain distribution measurement for wall thinned pipe bends by ESPI is presented. Defect types observed in the steel piping in the nuclear power plants (NPP) are the crack at the weld part and the wall thinning defect in the pipe bends. Especially, the wall thinning defects in the pipe bends due to the flow-accelerated corrosion (FAC) is a main type of defects observed in the carbon steel piping system. ESPI is one of the optical non-destructive testing methods and can measure the stress and the strain distribution of the object subjected by the tensile loading or the internal pressure. In this paper, the strain distribution of the wall thinned pipe bends due to the internal pressure will be measured by ESPI technique and the results are discussed. From the results, the size of the wall thinning defect can also be measured approximately.

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Nondestructive Detection of Defect in a Pipe Using Thermography

  • Choi, Hee-Seok;Joung, Ok-Jin;Kim, Young-Han
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.1413-1416
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    • 2005
  • An infrared temperature sensor module developed for the detection of defects in a plate was modified to use in a cylinder. A set of optical fiber leads and a mechanism maintaining sensor-object distance constant were utilized for the modification of the IR sensor module. The detection performance was experimentally investigated, and the measured temperature was also compared with computed temperature distribution. The experimental outcome indicates that the detection of a simulated defect is readily available. The temperature distribution is better for defect detection than that with the previous device. In addition, the measured distribution is comparable to the calculated one using a heat conduction equation. The developed device of defect detection is suitable to be utilized in chemical processes where most of vessels and piping systems are in the shape of a cylinder.

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향상된 교차 버전 결함 예측을 위한 베이지안 최적화 프레임워크 (Bayesian Optimization Framework for Improved Cross-Version Defect Prediction)

  • 최정환;류덕산
    • 정보처리학회논문지:소프트웨어 및 데이터공학
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    • 제10권9호
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    • pp.339-348
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    • 2021
  • 최근 소프트웨어 결함 예측 연구는 교차 프로젝트 간의 결함 예측뿐만 아니라 교차 버전 프로젝트 간의 결함 예측 또한 이루어지고 있다. 종래의 교차 버전 결함 예측 연구들은 WP(Within-Project)로 가정한다. 하지만, CV(Cross-Version) 환경에서는 프로젝트 버전 간의 분포 차이의 중요성을 고려한 연구들이 없다. 본 연구에서는 다른 버전 간의 분포 차이까지 고려하는 자동화된 베이지안 최적화 프레임워크를 제안한다. 이를 통해 분포차이에 따라 전이 학습(Transfer Learning) 수행 여부를 자동으로 선택하여 준다. 해당 프레임워크는 버전 간의 분포 차이, 전이 학습과 분류기(Classifier)의 하이퍼파라미터를 최적화하는 기법이다. 실험을 통해 전이 학습 수행 여부를 분포차 기준으로 자동으로 선택하는 방법이 효과적이라는 것을 알 수 있다. 그리고 최적화를 이용하는 것이 성능 향상에 효과가 있으며 이러한 결과 소프트웨어 인스펙션 노력을 감소할 수 있다는 것을 확인할 수 있다. 이를 통해 교차 버전 프로젝트 환경에서 신규 버전 프로젝트에 대하여 효과적인 품질 보증 활동 수행을 지원할 것으로 기대된다.

실리콘에 MaV로 이온주입된 인의 결함분포와 profile에 관한 연구 (A Study of defect distribution and profiles of MeV implanted phosphorus in silicon)

  • 정원채
    • E2M - 전기 전자와 첨단 소재
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    • 제10권9호
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    • pp.881-888
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    • 1997
  • This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

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(-201)면 산화갈륨 단결정 기판 미세 결함 분석 (Characterizations of Microscopic Defect Distribution on (-201) Ga2O3 Single Crystal Substrates)

  • 최미희;신윤지;조성호;정운현;정성민;배시영
    • 한국전기전자재료학회논문지
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    • 제35권5호
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    • pp.504-508
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    • 2022
  • Single crystal gallium oxide (Ga2O3) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga2O3 substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga2O3 substrates to get a basic standard prior to growing Ga2O3 crystals. Etch pit technique was employed to expose the type of defects on the Ga2O3 substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga2O3 single crystals.