• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• 한국결정성장학회지
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• 제1권1호
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• pp.17-25
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• 1991

The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit $4{\times}10^{2}-7{\times}10^{3}cm^{-2}$ and $6{\times}10^{14}-4{\times}10^{15}cm^{-3}$, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient ($dT/dx-10^{\circ}/cm$) and slower rates of post - growth cooling ($20^{\circ}C/hr:1240-1000^{\circ}C,\;30^{\circ}C/hr:1000-700^{\circ}C$). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.

• Steel and Composite Structures
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• 제18권4호
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• pp.1045-1062
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• 2015

Concrete-filled circular t steel tubular joints (CFSTJs) in practice are frequently subjected to fluctuated loadings caused by wind, earthquake and so on. As fatigue crack is sensitive to such cyclic loadings, assessment on performance of CFSTJs with crack-like defect attracts more concerns because both high stress concentration at the brace/chord intersection and welding residual stresses along weld toe cause the materials in the region around the intersection to be more brittle. Once crack initiates and propagates along the weld toe, tri-axial stresses in high gradient around the crack front exist, which may bring brittle fracture failure. Additionally, the stiffness and the load carrying capacity of the CFSTJs with crack may decrease due to the weakened connection at the intersection. To study the behaviour of CFSTJs with initial crack, experimental tests have been carried out on three full-scale CFCST T-joints with same configuration. The three specimens include one uncracked joint and two corresponding cracked joints. Load-displacement and load-deformation curves, failure mode and crack propagation are obtained from the experiment measurement. According to the experimental results, it can be found that he load carrying capacity of the cracked joints is decreased by more than 10% compared with the uncracked joint. The effect of crack depth on the load carrying capacity of CFCST T-joints seems to be slight. The failure mode of the cracked CFCST T-joints represents as plastic yielding rather than brittle fracture through experimental observation.

• 한국세라믹학회지
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• 제29권11호
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• pp.900-904
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• 1992

High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

• 한국재료학회지
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• 제22권1호
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.985-988
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• 2004

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

• 대한기계학회논문집A
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• 제26권9호
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• pp.1746-1752
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• 2002

Fatigue fracture in machine components is produced by surface micro-crack from stress concentration area such as notch and material defect. It is difficult to predict the remaining fatigue lift of mechanical components because the surface micro-crack on critical area initiates and grows with statistical distribution. Plane bending fatigue tests were carried out on the plain specimen of Al 2024-T3 and the initiation and growth behavior of surface micro cracks were observed. The statistical distribution of surface length of multiple micro cracks and their maximum length were investigated. The maximum surface crack length distributions were analyzed on the basis of the statistics of extremes in order to examine the prediction of remaining life.

• 콘크리트학회지
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• 제11권1호
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• pp.129-139
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• 1999

본 연구는 콘크리트 구조물의 보강공법으로 널리 쓰이고 있는 강판에 의한 부착식 보강공법의 단점인 단부에서의 강판분리 현상에 대한 보완실험으로 실시되었다. 실험결과 노치가 적용된 강판부착식 공법이 항복하중 이후 최대하중까지의 증가율이 기존의 공법보다 증가되어 구조물의 보강 성능의 개선 및 안전성의 확보 측면에서 크게 개선되었을 뿐만 아니라 균열이나 처짐의 조절측면에서도 우수한 것으로 판명되었다. 이는 강판에 대한 약간의 변형만으로도 구조물의 수명을 연장시킬 수 있다는 장점과 함께 경제적으로도 보강된 구조물에 대한 추가적인 제반 비용의 절감도 기대할 수 있을 것이다.