• Title/Summary/Keyword: Defect Phenomena

Search Result 78, Processing Time 0.025 seconds

Prediction of Defect Rate Caused by Meteorological Factors in Automotive Parts Painting (기상환경에 따른 자동차 부품 도장의 불량률 예측)

  • Pak, Sang-Hyon;Moon, Joon;Hwang, Jae-Jeong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2021.10a
    • /
    • pp.290-291
    • /
    • 2021
  • Defects in the coating process of plastic automotive components are caused by various causes and phenomena. The correlation between defect occurrence rate and meteorological and environmental conditions such as temperature, humidity, and fine dust was analyzed. The defect rate data categorized by type and cause was collected for a year from a automotive parts coating company. This data and its correlation with environmental condition was acquired and experimented by machine learning techniques to predict the defect rate at a certain environmental condition. Correspondingly, the model predicted 98% from fine dust and 90% from curtaining (runs, sags) and hence proved its reliability.

  • PDF

A study of electrical stress on short channel poly-Si thin film transistors (짧은 채널 길이의 다결정 실리콘 박막 트랜지스터의 전기적 스트레스에 대한 연구)

  • 최권영;김용상;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.32A no.8
    • /
    • pp.126-132
    • /
    • 1995
  • The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

  • PDF

A Study on the Jetting Phenomena in Injection Molding Process (사출성형 공정에서 젯팅 현상에 관한 고찰)

  • Lyu Min-Young
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2002.02a
    • /
    • pp.125-131
    • /
    • 2002
  • Surface defects in injection molded parts are due to the unsteady flow of polymer melt which are related to the geometries of cavity and gate, the operational conditions of injection and the rheological properties of polymer. In this study we have examined jetting phenomena in injection molding process for three kinds of PCs which have different molecular weight and structure, PBT and PC/ABS alloy with several injection speeds. We have used various cavity shapes that are tensile, flexural and impact test specimens with various gate and cavity thicknesses. Through this study we have observed that the formation of surface defect associated with jetting during filling stage in injection molding is strongly related to die swell. This means that the jetting is strongly affected by the elastic property rather than the viscous property in viscoelastic characteristics of molten polymer. Large die swell would eliminate jetting however, the retardation of die swell would stimulate jetting. In the point of mold design, reducing the thickness ratio of cavity to gate can reduce or eliminate jetting and associated surface defects regardless of magnitude of elastic property. It also enlarges process window that can produce steady flow of polymer melt in injection molding.

  • PDF

A Study on Cause of Defects in NIL Molding Process using FEM (유한요소 해석을 이용한 나노임프린트 가압 공정에서 발생하는 결함 원인에 대한 연구)

  • Song, N.H.;Son, J.W.;Kim, D.E.;Oh, S.I.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2007.10a
    • /
    • pp.364-367
    • /
    • 2007
  • In nano-imprint lithography (NIL) process, which has shown to be a good method to fabricate polymeric patterns, several kinds of pattern defects due to thermal effects during polymer flow and mold release operation have been reported. A typical defect in NIL process with high aspect ratio and low resist thickness pattern is a resist fracture during the mold release operation. It seems due to interfacial adhesion between polymer and mold. However, in the present investigation, FEM simulation of NIL molding process was carried out to predict the defects of the polymer pattern and to optimize the process by FEA. The embossing operation in NIL process was investigated in detail by FEM. From the analytical results, it was found that the lateral flow of polymer resin and the applied pressure in the embossing operation induce the weld line and the drastic lateral strain at the edge of pattern. It was also shown that the low polymer-thickness result in the delamination of polymer from the substrate. It seems that the above phenomena cause the defects of the final polymer pattern. To reduce the defect, it is important to check the initial resin thickness.

  • PDF

The Improvement of NDF(No Defect Found) on Mobile Device Using Datamining (데이터 마이닝 기법을 활용한 Mobile Device NDF(No Defect Found) 개선)

  • Lee, Jewang;Han, Chang Hee
    • Journal of Korean Society of Industrial and Systems Engineering
    • /
    • v.44 no.1
    • /
    • pp.60-70
    • /
    • 2021
  • Recently, with the development of technologies for the fourth industrial revolution, convergence and complex technology are being applied to aircraft, electronic home appliances and mobile devices, and the number of parts used is increasing. Increasing the number of parts and the application of convergence technologies such as HW (hardware) and SW (software) are increasing the No Defect Found (NDF) phenomenon in which the defect is not reproduced or the cause of the defect cannot be identified in the subsequent investigation systems after the discovery of the defect in the product. The NDF phenomenon is a major problem when dealing with complex technical systems, and its consequences may be manifested in decreased safety and dependability and increased life cycle costs. Until now, NDF-related prior studies have been mainly focused on the NDF cost estimation, the cause and impact analysis of NDF in qualitative terms. And there have been no specific methodologies or examples of a working-level perspective to reduce NDF. The purpose of this study is to present a practical methodology for reducing NDF phenomena through data mining methods using quantitative data accumulated in the enterprise. In this study, we performed a cluster analysis using market defects and design-related variables of mobile devices. And then, by analyzing the characteristics of groups with high NDF ratios, we presented improvement directions in terms of design and after service policies. This is significant in solving NDF problems from a practical perspective in the company.

A Study on the Failure Mode of the Rolling Bearing with Defective Balls

  • Hyun, J.S.;Park, T.J.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
    • /
    • 2002.10b
    • /
    • pp.305-306
    • /
    • 2002
  • In this paper, the endurance life of the rolling bearings with defective balls and their failure (flaking) phenomena are presented. It was found that the lives of ball bearings with defective balls were shorter than that of calculated L10 life as well as that of normal bearings in spite of the using standard bearing components. Although the bearings were assembled with defective balls, whereas the other parts were qualified new ones, the main failures were occurred on the inner ring raceways. Moreover, the failures were on the center of the groove curvature and the severity of failure is similar to the order of initial defect depth of the balls. These shows that the defects on the bearings can affect the life of tribologically contacted mating parts.

  • PDF

A Study on the Piping Defect at The Final Stage of Axisymmetric Extrusion by Upper Bound Element Technique (상계요소법에 의한 축대칭 압출의 최종공정에서의 파이핑 발생에 관한 연구)

  • Choi, Jae-Chan;Choi, In-Keun
    • Transactions of Materials Processing
    • /
    • v.3 no.1
    • /
    • pp.23-37
    • /
    • 1994
  • The upper bound element technique(UBET) is used to analyze the final stage of the axisymmetric forward extrusion. Kinematically admissible velocity field involving curved surface of velocity discontinuity is assumed. The required power to arise the piping defect is obtained and is compared with Aviture's solution a the same condition. Conditions for inception of the cavity and development of the pipe are predicted. The internal radius of the pipe and critical length of billet are also determined. Experiments are carried out for extrusion with lead specimens to investigate the piping phenomena. The theoretically predicted results showed reasonably good agreement with the experimental observation.

  • PDF

Thermal and Chemical Quenching Phenomena in a Microscale Combustor (I) -Fabrication of SiOx(≤2) Plates Using ion Implantation and Their Structural, Compositional Analysis- (마이크로 연소기에서 발생하는 열 소염과 화학 소염 현상 (I) -이온 주입법을 이용한 SiOx(≤2) 플레이트 제작과 구조 화학적 분석-)

  • Kim Kyu-Tae;Lee Dae-Hoon;Kwon Se-Jin
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.30 no.5 s.248
    • /
    • pp.397-404
    • /
    • 2006
  • Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

Transport phenomena of a-Se:As thin film for digital X-ray Conversion Material (디지털 X-선 변환물질을 위한 비소(As) 첨가 비정질 셀레늄(a-Se) 박막의 수송현상)

  • Park, Chang-Hee;Kim, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.282-283
    • /
    • 2006
  • The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

  • PDF

The Improvement of Weldline and Flow mark Defection by using Injection Molding Analysis (사출성형 해석을 통한 Weldline 및 Flow mark 개선사례)

  • Lee, Yeong Chang
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.30 no.12
    • /
    • pp.1295-1301
    • /
    • 2013
  • The cause of flow mark defect is known as non-uniform temperature of mold surface when the flow front meets the cold cavity. The exact definition and classification of Flow mark is not clear because the mechanism of flow mark is not figured out till now. Any injection molding analysis software can not predict the flow mark phenomena. To solve weldline and flow mark defects, the gate thickness is reduced to increase the melt front velocity and the melt front velocity of the flow mark area is increased from 82.3mm/s to 104.7mm/s. In addition, the bulk temperature of the flow mark area is increased from $178.3^{\circ}C$to $215.2^{\circ}C$ by adding a cold slug well. The flow mark phenomena can be greatly reduced by increasing the flow front velocity and elevating the bulk temperature.