• 제목/요약/키워드: Defect Model

검색결과 791건 처리시간 0.053초

Quantitative nondestructive evaluation of thin plate structures using the complete frequency information from impact testing

  • Lee, Sang-Youl;Rus, Guillermo;Park, Tae-Hyo
    • Structural Engineering and Mechanics
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    • 제28권5호
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    • pp.525-548
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    • 2008
  • This article deals the theory for solving an inverse problem of plate structures using the frequency-domain information instead of classical time-domain delays or free vibration eigenmodes or eigenvalues. A reduced set of output parameters characterizing the defect is used as a regularization technique to drastically overcome noise problems that appear in imaging techniques. A deconvolution scheme from an undamaged specimen overrides uncertainties about the input signal and other coherent noises. This approach provides the advantage that it is not necessary to visually identify the portion of the signal that contains the information about the defect. The theoretical model for Quantitative nondestructive evaluation, the relationship between the real and ideal models, the finite element method (FEM) for the forward problem, and inverse procedure for detecting the defects are developed. The theoretical formulation is experimentally verified using dynamic responses of a steel plate under impact loading at several points. The signal synthesized by FEM, the residual, and its components are analyzed for different choices of time window. The noise effects are taken into account in the inversion strategy by designing a filter for the cost functional to be minimized. The technique is focused toward a exible and rapid inspection of large areas, by recovering the position of the defect by means of a single accelerometer, overriding experimental calibration, and using a reduced number of impact events.

Enhancing Model-based Fault Traceability by Using Similarity between Bug and Commit Information

  • 정동주;민경식;이정원;이병정
    • 인터넷정보학회논문지
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    • 제20권2호
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    • pp.29-37
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    • 2019
  • As software development technology evolves, the quality of software has increased. But software created through sophisticated technology is still defective. The developer will be aware of the defect through a bug report and the reported defect must be fixed as soon as possible for the software to function correctly. It is important to know which component of the program is related to the reported defect and should be fixed. However, even though the developer understands the developed software, the task of tracing faults is a time-consuming task and requires effort. Therefore, if there is a way for developers to support tracing faults, they could fix defects more quickly. Because fixing defects rapidly is a factor of software reliability, fault traceability is essential and an effective method is needed. Therefore, in this paper, we propose a model-based fault traceability enhancement technique by using bug report and commit information and verify the effectiveness of the proposed technique.

Oxygen Plasma Effect on AlGaN/GaN HEMTs Structure Grown on Si Substrate

  • Seo, Dong Hyeok;Kang, Sung Min;Lee, Dong Wha;Ahn, Du Jin;Park, Hee Bin;Ahn, Youn Jun;Kim, Min Soo;Kim, Yu Kyeong;Lee, Ho Jae;Song, Dong Hun;Kim, Jae Hee;Bae, Jin Su;Cho, Hoon Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.420-420
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    • 2013
  • We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

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두개골 성형술에서 석고와 신속조형모델을 이용한 간단한 Methylmethacrylate 삽입물 제작법 (Easy Molding Technique of Methylmethacrylate Implant Using Plaster and Rapid Prototyping Model in Cranioplasty)

  • 박기린;김용하;김태곤;이준호;하주호
    • 대한두개안면성형외과학회지
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    • 제13권2호
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    • pp.125-129
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    • 2012
  • Purpose: Methylmethacrylate is the most commonly used alloplastic material in cranioplasty. However during the polymerization of methylmethacrylate, a significant exothermic reaction takes place. This reaction may result in thermal injury to the brain tissue and other soft tissues. Also it is difficult to make three-dimensional methylmethacrylate implant that is perfectly matched to the defect during the operation time. We report on the molding technique of methylmethacrylate implant using plaster mold and the rapid prototyping model in cranioplasty. Methods: A 44-year-old male was referred to the department for severe frontal hollowness. He was involved in an automobile accident resulting in large frontal bone defect with irregular margin. The preformed patient-specific methylmethacrylate implant was made using plaster mold and the rapid prototyping model before the operative day. The methylmethacrylate implant was placed in the frontal defect and rigidly fixed with miniplates and screws on the operative day. Results: The operation was performed in an hour. In the 6 months follow-up period, there were no complications. Patient was satisfied with the results of cranioplasty. Conclusion: Safe cranioplasty was performed with the preformed patient-specific methylmethacrylate implant using plaster mold and the rapid prototyping model. The result of this method was satisfactory, aesthetically and functionally.

유전 알고리즘 기법을 이용한 HA 모델 설계 (A Hybird Antibody Model Design using Genetic Algorithm Scheme)

  • 신미예;전승흡;이상호
    • 한국컴퓨터정보학회논문지
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    • 제14권10호
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    • pp.159-166
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    • 2009
  • 자연면역 시스템은 여러 신체 부위에서 다양한 기능으로 외부침입에 민감하게 대응할 뿐만 아니라 기존에 감염된 정보를 기억하는 기능을 수행한다. 그러나 자연 면역 시스템의 원리를 적용한 컴퓨터 보안 시스템에서는 자연면역 시스템이 갖는 기능을 충분히 제공하지 못하는 문제점이 있다. 이 논문에서는 자연면역 시스템의 네거티브 셀렉션을 적용한 항체와 임의의 비정상 시스템 콜 시퀀스를 선택하여 유전자 알고리즘을 적용한 항체를 결합하여 자연면역 시스템과 유사한 기능을 제공하는 하이브리드 모델을 제안한다. 제안된 모델은 긍정적 결함과 부정적 결함을 줄이기 위해 임의의 비정상 시스템 콜 시퀀스를 이용한다. 실험에 사용된 데이터는 UNM(University of New Maxico)에서 제공된 샌드메일 데이터이며 실험 결과 제안 모델은 기존 네거티브 셀렉션보다 비정상 시스템 콜을 정상 시스템 콜로 판정하는 부정적 결함이 평균 0.55% 낮게 나타났다.

수율 예측을 위한 변수 설정과 모델링에 대한 연구 (A Study of Establishment of Parameter and Modeling for Yield Estimation)

  • 김흥식;김진수;김태각;최민성
    • 전자공학회논문지A
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    • 제30A권2호
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    • pp.46-52
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    • 1993
  • The estimation of yield for semiconductor devices requires not only establishment of critical area but also a new parameter of process defect density that contains inspection mean defect density related cleanness of manufacure process line, minimum feature size and the total number of mask process. We estimate the repaired yield of memory devide, leads the semiconductor technique, repaired by redundancy scheme in relation with defect density distribution function, and we confirm the repaired yield for different devices as this model. This shows the possibility of the yield estimation as statistical analysis for the condition of device related cleanness of manufacture process line, design and manufacture process.

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탐상조건 예측을 위한 초음파 시뮬레이션 (Ultrasonic Simulation for Test Condition Estimate)

  • 허선철;박영철;이광영;박원조
    • 한국정밀공학회지
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    • 제18권9호
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    • pp.37-44
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    • 2001
  • Ultrasonic testing has a characteristics such as excellent permeability, high-sensitivity to find defect and an almost exact measurement for position. size and direction of inner defect, which differ from other non-destructive testing. In the study, we developed program into optimal testing condition, to distinguish obstacle echo and defect position. This program shows generation and processing of ultrasonic pulse. We compared simulation with ultrasonic test in 45$^\circ$, 60$^\circ$and 70$^\circ$transducer. Test results were in accordance with simulation within 0.1~7.2%.

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CANDU 압력관 건전성평가를 위한 결함해석 (Defect Assessment for Integrity Evaluation of CANDU Pressure Tubes)

  • 김영진;석창성;박윤원
    • 대한기계학회논문집
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    • 제19권3호
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    • pp.731-740
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    • 1995
  • The objective of this paper is to develop defect assessment technology for integrity evaluation of CANDU pressure tubes. In fracture mechanics analysis, three-dimensional and two-dimensional (line-spring model) finite element analyses were performed to obtain the stress intensity factor for axial and circumferential surface cracks. In leak before break (LBB) analysis, heat transfer analyses for through-wall cracks were performed by considering the cooling effect and the LBB application time was computed. It was shown that the analytical results obtained in this study provide less-conservative but accurate solution for defect assessment of CANDU pressure tubes.

고속철도의 장파장 제도틀림 분석에 대한 연구 (A Study of the Long Wave Track Defect Analysis for High Speed Railway)

  • 강기동
    • 한국철도학회논문집
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    • 제8권2호
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    • pp.111-115
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    • 2005
  • The Study provides the technical background and calculation method f3r the long wave track defect. On high speed railway, It is necessary to manage the long wave band up to 80m track defect fur improving a riding quality. For this reason, Track recording methods for highspeed railway are used 10m and 30m recording bases, these are covered middle wave band and long wave band successfully. Extended base recording data is calculated by geometrical model and this data provides a good result for KTX riding index.

짧은 채널 길이의 다결정 실리콘 박막 트랜지스터의 전기적 스트레스에 대한 연구 (A study of electrical stress on short channel poly-Si thin film transistors)

  • 최권영;김용상;한민구
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.126-132
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    • 1995
  • The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

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