• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.6
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• pp.483-486
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• 2005

The relationship between the EFBH (Equivalent Flat-Bottom Hole) size measured by non-destructive method and the actual size by destructive method in many rotors manufactured at Doosan Heavy Industries & Construction Co. Ltd. was investigated. In this investigation. "the Master Curve" compensating the differences between UT reported sizes and actual sizes of defects in our rotor forgings were obtainable. The applicability of this "Master Curve" as a way of calculating the actual defect size was also investigated. For the evaluation of rotor forgings, it is expected that this "Master Curve" may be used to determine the accurate actual sizes of defects.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.854-857
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• 2000

Chemical Mechanical Polishing(CMP) has been accepted as one of the essential processes for VLSI fabrication. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. This defect makes removal rate decrease with a number of polished wafer and the desired within-chip planarity, within wafer and wafer-to-wafer nonuniformity are unable to be achieved. So, pad conditioning is essential to overcome this defect. The eletroplated diamond grit disk is used as the conventional conditioner, And alumina long fiber, the .jet power of high pressure deionized water and vacuum compression are under investigation. But, these methods have the defects like scratches on wafer surface by out of diamond grits, subsidences of pad pores by over-conditioning, and the limits of conditioning effect. To improve these conditioning methods. this paper presents the Characteristics of Ultrasonic conditioning aided by cavitation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.5
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• pp.606-613
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• 2011

In this paper, patterns of laser scattering and detection of micro defects have been investigated based on Rayleigh criterion for silicon wafer in solar cell. Also, a new laser scattering mechanism is designed using characteristics of light scattering against silicon wafer surfaces. Its parameters are to be optimally selected to obtain effective and featured patterns of laser scattering. The optimal parametric ranges of laser scattering are determined using the mean intensity of laser scattering. Scattering patterns of micro defects are investigated at the extracted parameter region. Among a lot of pattern features, both maximum connected area and number of connected component in patterns of laser scattering are regarded as the important information for detecting micro defects. Their usefulness is verified in the experiment.

• Journal of the Korean Chemical Society
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• v.54 no.4
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• pp.380-386
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• 2010

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.124-127
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• 2007

In this study, we focused on investigation of governing parameters affected on the fatigue properties in the hyper-eutectoid steel wires used for TBR tires. Steel wires are fabricated under different drawing strain from 3.36 to 3.80. Their diameters are 0.21 mm and 0.185mm, respectively. The fatigue properties was measured by hunter rotating beam tester, specially designed thin-sized steel wires. The results showed that the fatigue properites of steel wire, marked as A-1, were greater than the others, due to the low value of residual stress. In order to elucidate the variations of fatigue properties, the microstructure, surface defect and residual stress were observed and measured by useful analysis technique, such as TEM, 3D profiler and FIB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.569-572
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• 2003

In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".

• Proceedings of the Korean Institute of Building Construction Conference
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• 2022.11a
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• pp.97-98
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• 2022

The purpose of this study is to find out the failure conditions of fire doors in the process of use and prepare maintenance measures against them and find out the failure conditions and failure rates of fire doors according to the period of use of buildings. According to a survey of the failure rate and failure factor of fire doors, the failure rate of fire doors under 5 years was 3.7%, 13.4% of fire doors under 5 years and 10 years, and 14.8% of fire doors under 15 years and 27.6% of fire doors over 20 years. In particular, 15 years later, the failure rate of fire doors exceeded 20%. The main defects were found to be natural aging, holes, opening and closing failures, gaps, and failure and wear of accessories such as gaskets and door closers.

• Journal of the Korean Ceramic Society
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• v.16 no.4
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• pp.213-224
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• 1979

The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.2
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• pp.122-129
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• 2006

Shearography is one of optical methods that has been applied to nondestructive testing (NDT) and strain/stress analysis. The technique has the merit of the directly measuring relative displacement, which is insensitive to environmental vibration disturbance. Previous studies about the method have emphasized on extending its application to new fields and lack insufficient research on effective parameters for qualitative and quantitative evaluation of defects. In this paper, the influence of shearing amount on the detection of an internal defect is investigated. In experiment, slender defects along longitudinal direction of pipeline are artificially designed and detection results according to the change of shearing amount are analyzed. Based on the investigation, we propose the technique for the determination of defect size and accurate source location.