This study is aimed to identify the method to use the CaO-$Al_2O_3$ system of rapidly cooled steel making slag (RCSS) as the environment-friendly inorganic accelerating agent by analyzing its physical and chemical properties. The fraction of rapidly cooled steel making slag is distinguished from its fibrous, and the contents of CaO and $Fe_2O_3$ are inversely proportional across different fractions. In addition, as the content of CaO decreased and the content of $Fe_2O_3$ increased, the loss ignition tended to become negative (-) and the density increased. The pore distribution by mercury intrusion porosimetry is very low as compared to the slowly cooled steel-making slag, which indicates that the internal defect and the microspore rate are remarkably lowered by the rapid cooling. To analyze the major minerals the rapidly cooled steel-making slag, XRD, f-CaO quantification and SEM-EDAX analysis have been performed. The results shows that f-CaO does not exist, and the components are mainly consisted of $C_{12}A_7$ and reactive ${\beta}-C_2S$.
Purpose: Various kinds of biodegradable membranes are currently used in dental clinics. And the frequency and the necessity of their usage are increasing due to their numerous advantages. Therefore it is important to understand the difference of various membranes and histological reaction against implanted membranes. Materials and Methods: Biodegradable membranes of $Biogide^{(R)}$, $Resolute^{(R)}$, and $Tutodent^{(R)}$ were cut into small pieces by $1.0{\times}0.5cm$. The membranes were implanted 1.5cm apart from each other under the epithelium on the skull of 18 Sprague Dawley rats. The animals were sacrificed at 3, 7, and 14 days after surgical procedure. The specimens were examined by histological analysis. Results: 1. Early period after implantation of the membranes showed connective tissues surrounding membranes and there were a few inflammatory cells present. 2. In $Biogide^{(R)}$ and $Tutodent^{(R)}$ specimens, inflammatory cells and surrounding tissues were shown to infiltrate from outside with slight density difference inside. In $Resolute^{(R)}$ specimens, membranes were fragmented. Inflammatory cells and connective tissues were also observed inside. 3. In $Resolute^{(R)}$ specimen, giant cells were present which implicates that foreign body reaction has occurred. 4. $Biogide^{(R)}$ had lower integrity than other membranes and is not enough to be used alone in defect area. However, $Resolute^{(R)}$ had superior firmness than others. $Tutodent^{(R)}$ had middle level of integrity. Conclusion: This experimental model enabled to observe early inflammatory reactions and morphological changes of materials and can be used to develop and evaluate the efficacy of biodegradable membranes. Duplication of standardized human oral environment will be required in future experiments.
A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.
A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.
Journal of the Korean Crystal Growth and Crystal Technology
/
v.32
no.6
/
pp.219-224
/
2022
CaF2 single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF2 belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF2 single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF2 single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF2 crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.
Park, Chul-Soo;Mok, Young-Jin;Choi, Chan-Yong;Lee, Tai-Hee
Journal of the Korean Geotechnical Society
/
v.25
no.9
/
pp.45-55
/
2009
The quality of railroad trackbed fills has been controlled by field measurements of density and bearing resistance of plate-load tests. The control measures are compatible with the design procedures whose design parameter is $k_{30}$ for both ordinary-speed railways and high-speed railways. However, one of fatal flaws of the design procedures is that there are no simple laboratory measurement procedures for the design parameters ($k_{30}$ or, $E_{v2}$ and $E_{v2}/E_{v1}$) in design stage. To overcome the defect, the compressional wave velocity was adopted as a control measure, in parallel with the advent of the new design procedure, and its measurement technique was proposed in the preliminary investigation. The key concept of the quality control procedure is that the target value for field compaction control is the compressional wave velocity determined at optimum moisture content using modified compaction test, and direct-arrival method is used for the field measurements during construction, which is simple and reliable enough for practice engineers to access. This direct-arrival method is well-suited for such a shallow and homogeneous fill lift in terms of applicability and cost effectiveness. The sensitivity of direct-arrival test results according to the compaction quality was demonstrated at a test site, and it was concluded that compressional wave velocity can be effectively used as quality control measure. The experimental background far the companion study (Park et al., 2009) was established through field and laboratory measurements of the compressional wave velocity.
Hyeong-Yun Kim;Sunjae Kim;Hyeon-U Cheon;Jae-Hyeong Lee;Dae-Woo Jeon;Ji-Hyeon Park
Korean Journal of Materials Research
/
v.33
no.12
/
pp.525-529
/
2023
β-Ga2O3 has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga2O3 epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga2O3 on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga2O3 epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 1019 to 1 × 1016 cm-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga2O3 hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga2O3 applications with the advantage of low substrate cost.
Proceedings of the Korean Vacuum Society Conference
/
2012.02a
/
pp.100-101
/
2012
The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.
This study was conducted to monitor 4 years of changes in the vegetation structure starting from 2007 when restoration began and propose vegetation management ideas for the riparian ecological restoration areas in the purchased land around Nakdonggang(River). The study was conducted in each of 15 locations ($208,342m^2$) in the riparian ecological restoration areas in November 2007, September 2008, October 2009 and September 2010. The analysis results of the changes in planting species and population showed that, in the case of trees, Acer pseudo-sieboldianum, Quercus acutissima, Acer ginnala, Quercus aliena, Quercus variabilis indicated relatively little changes in their numbers and Quercus dentata, Cornus walteri, Morus alba, Styrax obassia, Sorbus alnifolia var. macrophylla indicated a 100% withering rate. Most shrubs withered due to the oppressive pressure of herbs and climbing plants. The planting density decreased over 4 years on average 28 plants/$100m^2$ to 20 plants/$100m^2$ to 16 plants/$100m^2$. Shortly after the restoration, The the amount of growth was reduced by restoration stress. however as time goes on after the restoration tended to stabilize. The changes in the basal area showed a decrease from $507.1cm^2/100m^2$ in 2007 right after restoration to $301.8cm^2/100m^2$ in 2008 and afterwards showed an increasing trend by going to $324.9cm^2/100m^2$ in 2009 and $372.7cm^2/100m^2$ in 2010. To improve the planting structure of the riparian ecological restoration area, the selection of tree species that have been considered for soil moisture and the differentiation of suitable planting structures that have been considered for local conditions were needed.
Corner block with anchor bolt(CBA) joint method used in knock-down type table furniture manufacturing can reduce the packing and transporting cost. Unfortunately. it also has the disastrous defect to be loosend and unstable during the service life mainly due to fatigue and creep(repeated and prolonged loading). So 22 joint groups constructed were tested to evaluate the effect of some design factors related to the size of side rail(apron). block attachment to side rail. and the number of anchor bolt as well as the effect of the type of corner block(mitered type vs. rectangular type) Usable strength from the stiffness coefficients of each joint group were analysed with SPSS /PC+ and described as the criteria of CBA joint construction. The conclusions were as follows: The height of side rail(50, 75 and 100 mm) and the addition of polyvinyl acetate(PVAc) emulsion in the corner block attactment to side rail had the effect on raising the usable strength of CBA joint with remarkable high significance. And the effect of 2 - anchor bolts was also superior to that of 1 - bolt significantly. However. the thickness of side rail(22 mm vs. 25 mm) had no effect on the strengthening the table joint rigidity. Mitered type corner block joint appeared to he recommendable for CBA jointed table construction rather than the rectangular type one regardless of the method of block attachment to side rail. The best result identified from Duncan's multiple comparison was in the construction with 25 mm thick and 100 mm height of side rail fastened using 2 - anchor bolts in mitered type corner block. But it would be reasonable to use 22 mm thick & 75 mm high side rail and mitered corner block with PVAc emulsion & 2 bolts considering the productivity and production cost down in the MDF furniture manufacturing industries.
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