• Journal of the Korean institute of surface engineering
• /
• v.51 no.6
• /
• pp.393-399
• /
• 2018

Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

• Korean Journal of Materials Research
• /
• v.29 no.7
• /
• pp.456-462
• /
• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Corrosion Science and Technology
• /
• v.18 no.1
• /
• pp.1-7
• /
• 2019

To find proper lathe machining parameters for SA182 Grade 304 stainless steel (SS), six kinds of samples with different machining surface states were prepared using a lathe. Surface morphologies and microstructures of near surface deformed layers on different samples were analysed. Surface morphologies and chemical composition of oxide films formed on different samples in simulated primary water with $100{\mu}g/L\;O_2$ at $310^{\circ}C$ were characterized. Results showed that surface roughness was mainly affected by lathe feed. Surface machining caused grain refinement at the top layer. A severely deformed layer with different thicknesses formed on all samples. In addition to high defect density caused by surface deformation, phase transformation, residual stress, and strain also affected the oxidation behaviour of SA182 Grade 304 SS in the test solution. Machining parameters used for # 4 (feed, 0.15 mm/r; back engagement, 2 mm; cutting speed, 114.86 m/min) and # 6 (feed,0.20 mm/r; back engagement, 1 mm; cutting speed, 73.01 m/min) samples were found to be proper for lathe machining of SA182 Grade 304 SS.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.2
• /
• pp.63-68
• /
• 2021

This study was focused to investigate the effect of NbC-coated crucible on the quality of the SiC crystals. Then, the different properties between SiC crystals grown in a conventional graphite crucible and NbC-coated crucible were systematically compared. SiC crystals were grown using the Physical Vapor Transport (PVT) method at a temperature of 2300℃ and a pressure of 5 Torr in Ar atmosphere. After grinding and polishing, the polytype of the grown SiC crystal was analyzed using Raman spectroscopy, and crystallinity was confirmed by HR-XRD. Furthermore, the defect density and the concentration of impurities were analyzed by an optical microscope and a SIMS, respectively.

• Korean Journal of Metals and Materials
• /
• v.49 no.9
• /
• pp.732-738
• /
• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Journal of Trauma and Injury
• /
• v.34 no.4
• /
• pp.299-304
• /
• 2021

Atypical hemolytic uremic syndrome (aHUS) is a rare, progressive, life-threatening condition of thrombotic microangiopathy characterized by thrombocytopenia, microangiopathic hemolytic anemia, and renal impairment. The mechanisms underlying aHUS remain unclear. Herein, we present the first case in the literature of aHUS after a traumatic injury. A 55-year-old male visited the emergency department after a traumatic injury caused by a tree limb. Abdominal computed tomography revealed a rectal wall defect with significant air density in the perirectal space and preperitoneum, implying rectal perforation. Due to the absence of intraperitoneal intestinal perforation, we performed diverting sigmoid loop colostomy. An additional intermittent simple repair was performed due to perianal and anal injuries. One day postoperatively, his urine output abruptly decreased and serum creatinine level increased. His platelet level decreased, and a spiking fever occurred after 2 days. The patient was diagnosed with acute renal failure secondary to aHUS and was treated with fresh frozen plasma replacement. Continuous renal replacement therapy (CRRT) was also started for oliguria and uremic symptoms. The patient received CRRT for 3 days and intermittent hemodialysis thereafter. After hemodialysis and subsequent supportive treatment, his urine output and renal function improved. The hemolytic anemia and thrombocytopenia also gradually improved. Dialysis was terminated on day 22 of admission and the patient was discharged after recovery. This case suggests that that a traumatic event can trigger aHUS, which should be considered in patients who have thrombocytopenia and acute renal failure with microangiopathic hemolytic anemia. Early diagnosis and appropriate management are critical for favorable outcomes.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.26 no.4
• /
• pp.526-532
• /
• 2022

With the development of IoT technology, image processing is being utilized in various fields such as image analysis, image recognition, medical industry, and factory automation. Noise is generated in image data from causes such as defect in transmission line. Image noise must be removed because it damages the performance of the image processing application program. Salt and Pepper noise is a representative type of image noise, and various studies have been conducted to remove Salt and Pepper noise. Widely known methods include A-TMF, AFMF, and SDWF. However, as the noise density increases, the performance deteriorates. Thus, this paper proposes an algorithm that performs filtering using a fuzzy logic weight mask only in case of noise after noise determination. In order to prove the noise removal performance of the proposed algorithm, an experiment was performed on images with 10% to 90% noise added and the PSNR was compared.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.3
• /
• pp.31-35
• /
• 2022

Recently, with the 4th industrial revolution, the demand for high-density semiconductors for large-capacity data processing is increasing. Researchers are interested in researching the reliability of surface mount technology (SMT). In this study, the effect of PCB pad design on assembly and adhesion reliability of passive component was analyzed using design of experiment (DOE). The DOE method was established using the pad length, width, and distance between pads of the PCB as variables. The assembly defect rate of the passive element after the reflow process was derived according to the misplacement direction of the chip resistor. The shear force between the passive element and the PCB was measured using shear tests. In addition, the shape of the solder according to the pad design was analyzed through cross-sectional analysis.

• Nuclear Engineering and Technology
• /
• v.55 no.8
• /
• pp.2797-2801
• /
• 2023

CdZnTeSe (CZTS) has attracted attention for applications in X- and gamma-ray detectors owing to its improved properties compared to those of CdZnTe (CZT). In this study, we grew and processed single crystals of CZT and CZTS using the Bridgeman method to confirm the feasibility of using a dosimeter for high-energy X-rays in radiotherapy. We evaluated their linearity and precision using the coefficient of determination (R²) and relative standard deviation (RSD). CZTS showed sufficient RSD values lower than 1.5% of the standard for X-ray dosimetry, whereas CZT's RSD values increased dramatically under some conditions. CZTS exhibited an R² value of 0.9968 at 500 V/cm, whereas CZT has an R² value of 0.9373 under the same conditions. The X-ray response of CZTS maintains its pulse shape at various dose rates, and its properties are improved by adding selenium to the CdTe matrix to lower the defect density and sub-grain boundaries. Thus, we validated that CZTS shows a better response than CZT to high-energy X-rays used for radiotherapy. Further, the applicability of an onboard imager, a high-energy X-ray (>6 MV) image, is presented. The proposed methodology and results can guide future advances in X-ray dose detection.

• Advances in nano research
• /
• v.14 no.1
• /
• pp.1-15
• /
• 2023

Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.