• Title/Summary/Keyword: Deep ultraviolet

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Selection of Three (E)UV Channels for Solar Satellite Missions by Deep Learning

  • Lim, Daye;Moon, Yong-Jae;Park, Eunsu;Lee, Jin-Yi
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.1
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    • pp.42.2-43
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    • 2021
  • We address a question of what are three main channels that can best translate other channels in ultraviolet (UV) and extreme UV (EUV) observations. For this, we compare the image translations among the nine channels of the Atmospheric Imaging Assembly on the Solar Dynamics Observatory using a deep learning model based on conditional generative adversarial networks. In this study, we develop 170 deep learning models: 72 models for single-channel input, 56 models for double-channel input, and 42 models for triple-channel input. All models have a single-channel output. Then we evaluate the model results by pixel-to-pixel correlation coefficients (CCs) within the solar disk. Major results from this study are as follows. First, the model with 131 Å shows the best performance (average CC = 0.84) among single-channel models. Second, the model with 131 and 1600 Å shows the best translation (average CC = 0.95) among double-channel models. Third, among the triple-channel models with the highest average CC (0.97), the model with 131, 1600, and 304 Å is suggested in that the minimum CC (0.96) is the highest. Interestingly they are representative coronal, photospheric, and chromospheric lines, respectively. Our results may be used as a secondary perspective in addition to primary scientific purposes in selecting a few channels of an UV/EUV imaging instrument for future solar satellite missions.

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A Study on the Properties of MgF2 Antireflection Film for Solar Cells

  • Yang, Hyeon-Hun;Park, Gye-Choon
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.33-36
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    • 2010
  • $MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

Pure Density Evolution of the Ultraviolet Quasar Luminosity Function at 2 < z < 6

  • Kim, Yongjung;Im, Myungshin
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.1
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    • pp.53.2-53.2
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    • 2021
  • Quasar luminosity function (QLF) shows the active galactic nucleus (AGN) demography as a result of the combination of the growth and the evolution of black holes, galaxies, and dark matter halos along the cosmic time. The recent wide and deep surveys have improved the census of high-redshift quasars, making it possible to construct reliable ultraviolet (UV) QLFs at 2 < z < 6 down to M1450 = -23 mag. By parameterizing these up-to-date observed UV QLFs that are the most extensive in both luminosity and survey area coverage at a given redshift, we show that the UV QLF has a universal shape, and their evolution can be approximated by a pure density evolution (PDE). In order to explain the observed QLF, we construct a model QLF employing the halo mass function, a number of empirical scaling relations, and the Eddington ratio distribution. We also include the outshining of AGN over its host galaxy, which made it possible to reproduce a moderately flat shape of the faint end of the observed QLF (slope of ~ -1.1). This model successfully explains the observed PDE behavior of UV QLF at z > 2, meaning that the QLF evolution at high redshift can be understood under the framework of halo mass function evolution. The importance of the outshining effect in our model also implies that there could be a hidden population of faint AGNs (M1450 > -24 mag), which are buried under their host galaxy light.

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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

  • Kim, Sung-Bock;Bae, Sung-Bum;Ko, Young-Ho;Kim, Dong Churl;Nam, Eun-Soo
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.79-85
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    • 2017
  • The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

Photoprotective Effect of Bamboo (Phyllostachys nigra var. henenis Strapf) Leaf Extract against Ultraviolet Radiation-induced Chronic Skin Damage in the Hairless Mouse (자외선 조사 마우스에서 만성 피부손상에 대한 분죽(Phyllostachys nigra var. henenis Strapf)잎 추출물의 효과)

  • Byeon, Jeong-Soo;Lee, Hae-June;Moon, Changjong;Kim, Jong Choon;Jo, Sung Kee;Jang, Jong Sik;Kim, Tae Hwan;Kim, Sung-Ho
    • Journal of Radiation Industry
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    • v.5 no.3
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    • pp.203-210
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    • 2011
  • To evaluate the ability of Bamboo (Phyllostachys nigra var. henenis Strapf) leaf extract (BL) to protect the skin from photodamage, the gross and microscopic changes in the skin of hairless mice and BL-treated mice exposed chronically to ultraviolet (UV) were examined. The skin of the UV-irradiated mice showed characteristic signs of photoaging, such as deep wrinkles across the back, increased epidermal thickeness, numerous cell infiltration, and many enlarged keratinizing cysts. BL-treated mice showed a significantly decreased wrinkling score and lack of proliferation of cysts. By the 22nd week, 88.9% (i.p. with saline) or 60.0% (topical administration with cream base) of the UV-irradiated mice developed at least one tumor. BL delayed tumor onset significantly. BL (i.p.) was also effective in reducing the occurrence of UV radiation-induced skin tumors and reduced the number of tumors per mouse. After 22 weeks of treatment, 37.5% (i.p.) of the mice treated with BL were tumor-free. Tumor multiplicity was reduced by 81.2% (i.p.) in the BL treated groups. It is noted that skin that is chronically exposed to UV is subject to photoaging and photocarcinogenesis and regular use of BL would prevent these photodamaging effects of UV.

Ultraviolet LEDs using n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction (n-ZnO/i-ZnO/p-GaN:Mg 이종접합을 이용한 UV 발광 다이오드)

  • Han, W.S.;Kim, Y.Y.;Kong, B.H.;Cho, H.K.;Lee, J.H.;Kim, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.50-50
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    • 2008
  • ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

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COMPARISON OF PHYSICAL PROPERTIES AND EVOLUTION OF AKARI AND SPITZER 24 ㎛-DETECTED GALAXIES AT z = 0.4 - 2

  • Fujishiro, Naofumi;Hanami, Hitoshi;Ishigaki, Tsuyoshi
    • Publications of The Korean Astronomical Society
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    • v.32 no.1
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    • pp.313-315
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    • 2017
  • We present physical properties of $24{\mu}m$ galaxies detected by AKARI and Spitzer and their evolution between redshifts 0.4 < z < 2. Using multi-wavelength data from X-ray to radio observations in NEP Deep Field (for AKARI) and Subaru/XMM-Newton Deep Field (for Spitzer), we derive photometric redshift, stellar mass, star-formation rate (SFR), dust extinction magnitude and rest-frame luminosities/colors of the $24{\mu}m$ galaxies from photometric SED fitting. We infer the SFRs from rest-frame ultraviolet luminosity and total infrared luminosity calibrated against Herschel photometric data. For both survey fields, we obtain complete samples with stellar mass of > $10^{10}M_{\odot}$ and SFR of > $30M_{\odot}/yr$ up to z = 2. We find that specific SFRs evolves with redshift at all stellar masses in NON-power-law galaxies (non-PLGs) as star-formation dominant luminous infrared galaxies (LIRGs). The correlations between specific SFR and stellar mass in the Spitzer and AKARI galaxy samples are well consistent with trends of the main sequence galaxies. We also discuss nature of PLGs and their evolution.

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

  • Oh, Teresa;Kim, Chy Hyung
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.207-212
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    • 2014
  • Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

Ultraviolet (UV)Ray 후처리를 통한 InGaZnO 박막 트랜지스터의 전기적 특성변화에 대한 연구

  • Choe, Min-Jun;Park, Hyeon-U;Jeong, Gwon-Beom
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.333.2-333.2
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    • 2014
  • RF 스퍼터링 방법을 이용하여 제작된 IGZO 박막 트랜지스터 및 단막을 제조하여 UV처리 유무에 따른 전기적 특성을 평가하였다. IGZO 박막 트랜지스터는 Bottom gate 구조로 제조되었으며 UV처리 이후 전계효과 이동도, 문턱전압 이하 기울기 값등 모든 전기적 특성이 개선된 것을 확인 하였다. 이후 UV처리에 따른 소자의 전기적 특성 개선에 대한 원인을 분석하기위해 물리적, 전기적, 광학적 분석을 실시하였다. XRD분석을 통해 UV처리 유무에 따른 IGZO박막의 물리적 구조 변화를 관찰했지만 IGZO박막은 UV처리 유무에 상관없이 물리적 구조를 갖지 않는 비정질 상태를 보였다. IGZO 박막 트랜지스터의 문턱전압 이하의 기울기 값과을 통하여 반도체 내부에 존재하는 결함의 양을 계산한 결과 UV를 조사하였을 때 결함의 양이 감소하는 결과를 얻었으며 이 결과는 SE를 통해 밴드갭 이하 결함부분을 측정하였을 때와 같은 결과였다. 또한 UV처리 전에는 shallow level defect, deep level defect등의 넓은 준위에서 결함이 발견된 반면 UV처리 이후에는 deep level defect준위는 없어지고 shallow level defect준위 역시 급격하게 감소한 것을 볼 수 있었다. 결과적으로 IGZO 박막의 경우 UV처리를 함에 따라 결함의 양이 감소하여 IGZO박막 트랜지스터의 전계 효과 이동도를 증가 시킬 뿐 아니라 문턱전압 이하 기울기 값을 감소시키는 원인으로 작용하게 된다는 결과를 도출하였다.

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Development of a Deep Learning-Based Automated Analysis System for Facial Vitiligo Treatment Evaluation (안면 백반증 치료 평가를 위한 딥러닝 기반 자동화 분석 시스템 개발)

  • Sena Lee;Yeon-Woo Heo;Solam Lee;Sung Bin Park
    • Journal of Biomedical Engineering Research
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    • v.45 no.2
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    • pp.95-100
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    • 2024
  • Vitiligo is a condition characterized by the destruction or dysfunction of melanin-producing cells in the skin, resulting in a loss of skin pigmentation. Facial vitiligo, specifically affecting the face, significantly impacts patients' appearance, thereby diminishing their quality of life. Evaluating the efficacy of facial vitiligo treatment typically relies on subjective assessments, such as the Facial Vitiligo Area Scoring Index (F-VASI), which can be time-consuming and subjective due to its reliance on clinical observations like lesion shape and distribution. Various machine learning and deep learning methods have been proposed for segmenting vitiligo areas in facial images, showing promising results. However, these methods often struggle to accurately segment vitiligo lesions irregularly distributed across the face. Therefore, our study introduces a framework aimed at improving the segmentation of vitiligo lesions on the face and providing an evaluation of vitiligo lesions. Our framework for facial vitiligo segmentation and lesion evaluation consists of three main steps. Firstly, we perform face detection to minimize background areas and identify the face area of interest using high-quality ultraviolet photographs. Secondly, we extract facial area masks and vitiligo lesion masks using a semantic segmentation network-based approach with the generated dataset. Thirdly, we automatically calculate the vitiligo area relative to the facial area. We evaluated the performance of facial and vitiligo lesion segmentation using an independent test dataset that was not included in the training and validation, showing excellent results. The framework proposed in this study can serve as a useful tool for evaluating the diagnosis and treatment efficacy of vitiligo.