• Electrical & Electronic Materials
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• v.9 no.7
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• pp.719-726
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• 1996

DLTS measurements were performed to study the annealing induced changes of the trap centers in MOV and to shed more light on the stability mechanism of the MOV. Two electron traps, Ec-0.26[eV] and Ec-(O.2-0.3)[eV], were observed in the unannealed samples in large quantities(7-9 X 1014[CM 3]), whereas the three electron traps Ec-0.17 [eV], Ec-0.26[eV] and Ec-(O.2-0.3)[eV] were observed far less in the annealed samples. The minima in the Ec-0.26[eV] trap density, coupled with the presented results that unannealed devices are unstable whereas 600.deg. C annealed devices are most stable, suggests that the instability of the MOV under long term electrical stressing is related to the Ec-0.26[eV] trap. This results support that the ion migration model for the device instability where the Ec-0.26[eV] defects may be the interstitial zinc or the migrating ions. The interstitial zinc originated as a result of the nonstoichiometric nature of ZnO might cause the degradation of the I-V characteristics of the MOV with long term electrical stressing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.126-130
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• 2021

The ball grid array is one of the packaging methods that used in high density printed circuit board. Solder void defects caused by voids in the solder ball during the BGA process do not directly affect the reliability of the product, but it may accelerate the aging of the device on the PCB layer or interface surface depending on its size or location. Void inspection is important because it is related in yields with products. The most important process in the optical inspection of solder void is the segmentation process of solder and void. However, there are several segmentation algorithms for the vision inspection, it is impossible to inspect all of images ideally. When X-Ray images with poor contrast and high level of noise become difficult to perform image processing for vision inspection in terms of software programming. This paper suggests the solution to deal with the suggested problem by means of using Mask R-CNN instead of digital image processing algorithm. Mask R-CNN model can be trained with images pre-processed to increase contrast or alleviate noises. With this process, it provides more efficient system about complex object segmentation than conventional system.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.127-132
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• 2009

We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.32 no.3
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• pp.189-199
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• 2006

Purpose of study: Partial thickness skin graft is the golden standard regimen for full-thickness skin defect caused by burn or trauma. However, in case of extensive burns of more than 50% of total body surface area, the donor site is not sufficient to cover all defects. As a second choice, allograft, xenograft and synthetic materials have been used to treat skin defect. Among them the amniotic membrane(AM) was used as a biological dressing for centuries because of its potential for wound healing. In this study, quantification of EGF in AM and effect of AM-collagen complex on full thickness skin defects was examined. Materials & Methods: The concentration of EGF in fresh, deep frozen and freeze-dried AM was evaluated by ELISA. EGF-R immunostaining was performed in freeze-dried AM. SD rats weighing 250${\sim}$300g was used for wound healing experiment. Three full thickness skin defects(28mm diameter) were made on dorsal surface of SD rat. The control group was covered by Vaselin gauze and AM-collagen complex and $Terudermis^{(R)}$. was grafted in two other defects. Healing area, Cinamon's score were evaluated before biopsy. Grafted sites were retrieved at 3 days, 1 week, 2 weeks and 4 weeks after operation. H & E and Factor VIII immunohistochemical stain was performed to evaluate the microscopic adhesion and structural integrity and microvessel formation. Results: 1. EGF concentration of fresh, deep frozen and freeze-dried AM showed similar level and EGF-R was stained in epithelial layer of freeze-dried AM. 2. At 4 weeks after grafting, the healing area of AM-collagen and Terudermis group was 99.29${\pm}$0.71% and 99.19${\pm}$0.77 of original size. However, that of control group was 24.88${\pm}$2.90. 3. The Cinamon's score of AM-Collagen and $Terudermis^{(R)}$. group at 4 weeks was 15.6${\pm}$1.26 and 14.6${\pm}$3.13 and that of control group was 3.7${\pm}$0.95. Significant difference was observed among control and experimental groups(p<0.05). 4. Histologic examination revealed that AM protected leukocyte infiltration and epithelial migration was nearly completed at 4 weeks. $Terudermis^{(R)}$. group showed mild neutrophil infiltration until 2 weeks and completion of epithelization at 4 weeks. Control group showed massive leukocyte infiltration until 4 weeks. 5. Microvessels were increased sharply at 1 week and control group at 1 and 4 week showed significant differences with $Terudermis^{(R)}$. group of same interval(p<0.05) but no differences were found with AM group(p<0.05). Conclusion: EGF and EGF-R were well preserved in freeze-dried AM. AM attached to collagen acted as excellent biologic dressing which had similar effect with $Terudermis^{(R)}$. AM showed anti-inflammatory action and healing was completed at 4 weeks after full-thickness skin defect.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.725-728
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• 2011

Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of EL2 centers was to be expected in the immediate vicinity of the dislocations. More recent work indicates that contrary to the expected behavior the photoqu$\acute{e}$nching of transmission images at T=80K does not appreciably change the image structure itself but more largely the uniform background level of absorption. Such investigations show that the transmission images of isolated dislocations (Indium doped materials) or cell structures of tangled dislocations (undoped materials) can be partly attributed to scattered light; similar operation at T=10K removes the dark features associated to EL2 but still preserves the skeleton of the pattern which is due to scattering. A result of the measurements is that dislocations must not be considered any longer as inexhaustive EL2 reservoirs. The lifetime of the photoqu$\acute{e}$nching mechanism is shown to vary differently for EL2 centers located close to the dislocations or in the matrix. In this paper we will develop the details of infrared image photoqu$\acute{e}$nching experiments in the vicinity of dislocations; undoped and In doped GaAs materials will be shown. These results will be discussed in the light of surface etching experiments.