• 대한전자공학회논문지
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• 제25권11호
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• pp.1294-1303
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• 1988

광 유도 전류 천이 (photo-induced current transient)방법으로 측정한 SI GaAs의 전자와 정공 trap이 갖을 수 있는 activation energy({\Delta}E_r)의 범위는 0.16$\pm$ 0.01eV에서 0.98$\pm$ 0.01eV까지 분포되어 있다. SI Undoped GaAs가 SI GaAs : Cr 보다 깊은 준위의 수가 적음을 확인 하였다. Trap의 열적인 capture cross section과 농도를 평가 하였고, 약간의 trap은 SI GaAs 성장시에 발생될 수 있는 결함과 관련되어 있음을 확인하였다. 특히 SI GaAs에서 보상 level로 작용하는 Cr과 “0” level를 좀 더 정확하게 측정하기 위하여 서로 다른 측정방법을 사용하여 측정한 결과를 각기 비교 검토 하였다. 즉, PICT측정, 상온 이상의 온도에서 측정한 Hall data 및 광전류 spectra data 등을 비교 검토 하였으며, 보상 level은 격자 결합이 매우 약함을 확인할 수 있었다. Hall data를 computer로 분석한 결과 중성 불순물 scattering이 측정 온도 범위에서 매우 중요한 역할을 하고 있음을 알 수 있었다.

• 한국정밀공학회지
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• 제31권1호
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• pp.75-81
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• 2014

Laser beam machining has been known as efficient for glass micromachining. It is usually used the ultra-short pulsed laser which is time-consuming and uneconomic process. In order to use economic and powerful long pulsed laser, indirect processing called laser-induced backside wet etching (LIBWE) is good alternative method. In this paper, micromachining of glass using Nd:YAG laser with nanosecond pulsed beam has been attempted. In order to improve shape accuracy, combined processing with magnetic stirrer has been widely used. Magnetic stirrer acts to circulate the solution and remove the bubble but it is not suitable for deep hole machining. To get better effect, ultrasonic vibration was applied for improving shape accuracy.

• Macromolecular Research
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• 제10권2호
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Tribology and Lubricants
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• 제9권1호
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• pp.55-61
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• 1993

Recently, due to the erosion damage that were generated increasingly at alloy metals of slide bearing by cavity of lubricating oil with tendency of high speed and high output of reciprocating engine, there is a need to study the process on the formation of cavitation erosion, and the characteristic of cavitation erosion at lubricating oil environments under various condition for marine ship. Therefore, the apparatus of cavitation erosion experiment used 20 KHz, $24 \mu m$ piezoelectric vibrator. The main results obtained through this test method are as follows: 1. The max. erosion rate at lubricating oil environments was related to the change of space, oil film thickness, and shown to tendency of gear oil>system oil>turbine oil>mixed oil environments with different viscosity. 2. The pitted hole by cavitation erosion at high viscosity oil environments became small and deep, and in addition to, they appeared to be wide and shallow at low viscosity.

• 천문학회보
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• 제43권1호
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• pp.39.2-39.2
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• 2018

GW170817/GRB170817A establishes a double neutron star merger as the progenitor of a short gamma-ray burst, starting 1.7 s post-coalescence. GRB170817A represents prompt or continuous emission from a newly formed hyper-massive neutron star or black hole. We report on a deep search for broadband extended gravitational-wave emission in spectrograms up to 700 Hz of LIGO O2 data covering this event produced by butterfly filtering comprising a bank of templates of 0.5 s. A detailed discussion is given of signal-to-noise ratios in image analysis of spectrograms and confidence levels of candidate features. This new pipeline is realized by heterogeneous computing with modern graphics processor units (GPUs). (Based on van Putten, M.H.PM., 2017, PTEP, 093F01.)

• Journal of Advanced Marine Engineering and Technology
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• 제18권2호
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• pp.64-74
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• 1994

The gundrill is capable of machining for having large length to diameter ratio in single pass. The techniques of gundrill and gun boring began developing in the late 18th century with the need for more accurate bores in rifle, cannon, machinery part and marine part etc. The main feature of the gun drilling provides a stabilizing cutting force resultant necessary for self guidance of the drill head. A study of the accuracy and surface finish of holes produced would reveal quite useful information regarding the process. The thesis deals with the experimental results obtained during gun drilling on marine part materials for different machining conditions.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.240-245
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• 2000

This paper presents the experimental study of drilling for duralumin A2024 with intermittently decelerated feed rate. It is achieved through a programmed periodic increase and decrease in the feed rate using a machining center. The following experimental result were performed with the objective of solving chip to disposal problems. In conventional drilling of aluminum, long continuous chips are produced that wind around the drill causing difficulties in eliminating chips from the cutting zone. In order to acquire the basic data necessary to regulate the chip profile, the relationship between cutting variables and chip shape was investigated. The following conclusions are established from the experimental results. At a suitable feed fluctuation ratio, intermittently decelerated feed drilling proved successful in breaking chips to appropriate lengths while maintaining stable cutting. Thus, it is an effective method for improving chip disposal. The amplitude of the dynamic component of cutting force in intermittent feed frilling is influenced by the feed fluctuation ratio.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.239-241
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• 2009

DRIE(Deep Ion Reactive Etching) 공정은 실리콘 웨이퍼를 식각하는 기술로서 Si wafer 비아 홀 제조에 주로 사용되고 있다. 즉, DRIE 공정은 식각 및 보호층 증착을 반복함으로써 직진성 식각을 가능하게 하는 공정이다. 또한, 3차원 적층 실장에서 Si wafer 비아 홀에 결함없이 효과적으로 구리 충진을 하기 위해서는 직각형 via보다 경사벽을 가진 via가 형상적으로 유리하다. 본 연구에서는 3차원 적층을 위한 Si wafer 비아 홀의 결함 없는 효과적인 구리 충진을 위해, DRIE 공정을 이용하여 기존의 경사벽을 가지는 via 흘 형성 공정보다 더욱 효과적인 공정을 개발하였다.

• 대한치과기공학회지
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• 제23권1호
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• pp.107-114
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• 2001

R.P.D fabrication can be made if the skills already is properly used in the manufacturing press. You may feel extremely comfortable to wear it. The material used has high elasticity that it can endure the hole process of Acetal Wax pattern casting without any deformation moreover its adaptability is not bad. Because of the poor financial condition of patterns and health insurance, Acetal R.P.D Framework can be one of the best alternatives used for setting clasp partial denture cheaply. R.P.D Framework is aesthetically excellent. The color caused by saliva is so similar to that of the rest of teeth that even dentists as well as patients can not recognize clasp arm. Clasp also helps to secure prosthesis ideally without damaging teeth due to its deep position downward. Since dentists and patients have a good reaction to clasp so far, we are encouraged to apply it to other technical fields.

• 센서학회지
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• 제17권5호
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.