• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 한국진공학회지
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• 제17권1호
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• pp.40-45
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• 2008

유리기판 위에 약 500 nm 의 두께로 성장된 ZnO층의 구조적, 광학적, 전기적 성질에 미치는 갈륨도핑의 영향에 대하여 연구 하였다. 다결정 ZnO 와 GZO 층은 상온에서 radio frequency magnetron sputtering 법을 사용하여 성장되었다. 투과전자현미경 (TEM)과 x-ray 회절분석 (XRD)에 의하면, 갈륨이 도핑된 ZnO 박막의 결정성은 ZnO에 비하여 향상되었고 (002)방향을 따라 우선성장 되었음이 발견되었다. GZO 박막의 투과도는 가시광 영역에서 ZnO 박막에 비해 약 10% 정도 향상된 것으로 나타났다. PL 분석에 따르면, NBE emission 세기와 DL emission 세기의 비는 GZO 와 ZnO의 경우 각각 2.65:1 과 1.27:1로 나타났다. GZO와 ZnO의 비저항은 각각 1.27과 1.61 $\Omega{\cdot}cm$로서 GZO의 전기전도도가 높았다. GZO 와 ZnO의 캐리어농도는 각각 $10^{18}$ and $10^{20}cm^2$/Vs으로 측정되었다. 본 실험결과 따르면, Ga 도핑으로 인해 ZnO 박막의 전기적, 광학적, 구조적 특성이 향상되었음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.168-168
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• 2012

Al doped ZnO (AZO)는 태양전지, 평판 디스플레이, OELD 등 광전자 소자에 적용되는 투명전도막용 재료인 ITO의 대체 재료로서 최근에 가장 각광받고 있는 물질이다. 하지만, $2.5{\times}10^{-4}{\Omega}{\cdot}cm$의 낮은 비저항과 90% 이상의 투과도를 갖는 ITO의 비해 AZO의 특성은 아직 부족한 상황이다. 수십 년간 많은 연구자들에 의해 다양한 제조 방법과 공정 조건들로 전기적, 광학적 특성을 향상시키기 위한 노력들이 진행되어 왔다. 하지만 실리콘 반도체와는 달리 II-VI족 물질의 정확한 근본적인 원리는 아직 불분명한 상태이다. 지금까지 AZO의 특성 향상의 원인을 결정립 크기, 주상구조의 우선 방위, 결정성, Zn-O 구조내의 산소 결핍 등의 메커니즘으로 설명해 왔다. 하지만, 본 연구에서는 지금까지 제안된 상기 요인의 변화 없이 전기적, 광학적 특성을 향상시키는 것이 짧은 열처리만으로도 가능했다. AZO 박막의 전기적, 광학적 특성에 큰 영향을 미치는 보다 근본적인 원인은 도핑 효율이다. ZnO 내에 도핑된 Al의 양보다 실제로로 활성화된 Al의 비율을 올리는 것이 중요하다. 본 연구에서 구조적, 조성적 변화 없이 도핑효율을 8.9%에서 66.7%까지 증가시켰으며, 이동도는 박막 표면의 및 결정립계 사이의 과잉산소를 줄임으로서 optical phonon scattering 감소를 통하여 증가시킬 수 있고, 이러한 과잉산소의 감소는 deep level emission을 감소시킴으로서 투과도 증가에도 영향을 준다. 본 연구에서 짧은 열처리를 통해 구조적 변화 없이 도핑효율의 증가만으로 $4.8{\times}10^{-4}{\Omega}{\cdot}cm$의 비저항과 90%의 투과도를 갖는 AZO 박막을 제조하였다.

• 한국세라믹학회지
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• 제41권5호
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• pp.359-363
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• 2004

Photoluminescence excitation (PLE) spectroscopy studies were performed for anodically etched porous Zn, which exhibited a PL in the blue/violet spectral range peaking at 420 nm (2.95 eV), and oxidzed porous Zn at 380$^{\circ}C$ for 10 min and 12 h. A broad absorption band was observed at 4.07 eV (305 nm), 3.49 (355 nm) for anodically etched porous Zn. In contrast, both the oxidized porous Zn and sintered ZnO exhibited an almost identical one broad absorption band at 3.85 eV (322 nm), when PLE spectra were measured at 378 nm (3.28 eV). The oxidized porous Zn and sintered ZnO, which displayed both UV and green luminescence band, showed an additional absorption band at 389 nm (3.19 eV) and 467 nm (2.66 eV). In contrast, no significant absorption band was detected for a 10-min oxidized porous Zn, which only displayed one UV luminescence void of deep-level luminescence. These absorption bands determined by PLE studies enabled a clear understanding of an emission mechanism for the UV and green luminescence from ZnO.

• 한국분말재료학회지
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• 제22권6호
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• 한국재료학회지
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• 제28권2호
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• pp.101-107
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• 2018

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• 대한원격탐사학회지
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• 제39권6_3호
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• pp.1679-1692
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• 2023

대한민국은 인구 증가와 산업 발전의 결과로 많은 양의 오염물질을 배출하는 국가이자, 지리적 위치로 인해 월경성 대기오염의 심각한 영향을 받는 국가이다. 국내외에서 발생하는 오염물질이 대한민국의 대기오염에 큰 피해를 야기하는 상황에서, 대기 오염물질 배출원의 위치 정보는 대기 중 오염물질의 이동 및 분포를 파악하고, 국가 차원의 대기오염 관리 및 대응 전략을 수립하는 데 매우 중요하다. 본 연구는 이러한 배경을 바탕으로, 고해상도 광학위성 영상과 딥러닝 기반의 영상 분할 모델을 활용하여 대기오염 현황을 분석하는 데 필수적인 국내외 대기오염물질 배출원의 공간 정보를 효과적으로 획득하는 것을 목표로 수행되었다. 특히, 월경성 대기오염에 크게 기여하는 것으로 평가된 산업단지와 채석장을 주요 연구 대상으로 선정하였으며, 이들 영역에 대한 다목적실용위성 3호 및 3A호의 영상들을 수집하여 전처리한 후, 모델 학습을 위한 입력 및 라벨 데이터로 변환하였다. 해당 데이터를 활용하여 U-Net 모델을 학습시킨 결과, 전체 정확도는 0.8484, mean Intersection over Union (mIoU)은 0.6490을 달성하였다. 모델의 예측 결과 맵은 코스 어노테이션(Course Annotation) 방식으로 제작된 라벨 데이터보다 객체의 경계를 더욱 정확하게 추출하는 것으로 나타나, 데이터 처리 및 모델 학습 방법론의 유효성을 입증하였다.

• Ocean and Polar Research
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• 제34권2호
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• pp.239-251
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• 2012

The food web dynamics in a coastal ecosystem of Korea were predicted with Ecosim, a trophic flow model, under various scenarios of primary productivity due to ocean warming and ocean acidification. Changes in primary productivity were obtained from an earth system model 2.1 under A1B scenario of IPCC $CO_2$ emission and replaced for forcing functions on the phytoplankton group during the period between 2020 and 2100. Impacts of ocean acidification on species were represented in the model for gastropoda, bivalvia, echinodermata, crustacean and cephalopoda groups with effect sizes of conservative, medium and large. The model results show that the total biomass of invertebrate and fish groups decreases 5%, 11~28% and 14~27%, respectively, depending on primary productivity, ocean acidification and combined effects. In particular, the blenny group shows zero biomass at 2080. The zooplankton group shows a sudden increase at the same time, and finally reaches twice the baseline at 2100. On the other hand, the ecosystem attributes of the mean trophic level of the ecosystem, Shannon's H and Kempton's Q indexes show a similar reduction pattern to biomass change, indicating that total biomass, biodiversity and evenness shrink dynamically by impacts of climate change. It is expected from the model results that, after obtaining more information on climate change impacts on the species level, this study will be helpful for further investigation of the food web dynamics in the open seas around Korea.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.