• 전자공학회논문지A
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• 제28A권11호
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

• 대한전자공학회논문지
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• 제27권5호
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• pp.737-746
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• 1990

Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

• 천문학회보
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• 제42권2호
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• pp.40.1-40.1
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• 2017

Massive early-type galaxies (ETG) have been spectroscopically confirmed up to z>3 which, together with their ages and abundances at z>1.5, implies that their progenitors must have converted gas into stars on short timescales. The termination of star formation in these galaxies can occur through several channels, but they remain largely conjectural, in part due to the current lack of direct measurements of the amount of residual gas in high redshift ETGs. Here I will present constraints on the star formation rate and dust/gas content of z=1.4-2.5 ETGs. These galaxies, close to their epoch of quenching, contained more than 2 orders of magnitude more dust than their local counterparts, which suggests the presence of substantial amounts of gas and a low star formation efficiency.

• Journal of Photoscience
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• 제12권3호
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.243-248
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• 2015

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.192.1-192.1
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• 2014

We report solution-processed organic trilayer solar cells consisting of poly (3-hexylthiophene) (P3HT), a conjugated polyelectrolyte (CPE) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), wherein the effect CPE layer thickness on device properties was investigated. The current-voltage characteristics under illumination and dark as well as photoluminescence were characterized using various concentrations (0.02, 0.1, and 0.3wt%) of to deposit the CPE interlayer between the donor and acceptor layers. We also investigated the influence of molecular dipole moments in the trilayer solar cells by external stimuli. These results provide an experimental approach for investigating the influence of interfacial dipoles on solar cell parameters when placed between the donor and acceptor and allow us to obtaining fundamental information about the donor/acceptor interface in organic solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.5 %, and the removal effect of latent charge by using light erase method was its 95.5 %.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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• pp.187-190
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• 2007

The Geostationary Ocean Color Imager (GOCI) is under development to provide a monitoring of ocean-color around the Korean Peninsula from geostationary platforms. It is planned to be loaded on Communication, Ocean, and Meteorological Satellite (COMS) of Korea. The GOCI has been designed to provide multi-spectral data to detect, monitor, quantify, and predict short term changes of coastal ocean environment for marine science research and application purpose. The target area of GOCI observation covers sea area around the Korean Peninsula. Based on the nonlinear radiometric model, the GOCI calibration method has been derived. The nonlinear radiometric model for GOCI will be validated through ground test. The GOCI radiometric calibration is based on on-board calibration devices; solar diffuser, DAMD (Diffuser Aging Monitoring Device). In this paper, the GOCI radiometric error propagation is analyzed. The radiometric model error due to the dark current nonlinearity is analyzed as a systematic error. Also the offset correction error due to gain/offset instability is considered. The radiometric accuracy depends mainly on the ground characterization accuracies of solar diffuser and DAMD.

• 천문학회지
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• 제37권4호
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• pp.185-191
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• 2004

We have been developing a solar observing system based on a fast CCD camera 1M30P made by the DALSA company. Here we examine and present the characteristics and performance of the camera. For this we have analyzed a number of images of a flat wall illuminated by a constant light source. As a result we found that in the default operating mode 1) the mean bias level is 49 ADU/pix, 2) the mean dark current is about 8 ADU /s/pix, 3) the readout noise is 1.3 ADU, and 4) the gain is about 42 electrons/ ADU. The CCD detector is found to have a linearity with a deviation smaller than $6\%$, and a uniform sensitivity better than $1\%$. These parameters will be used as basic inputs in the analysis of data to be taken by the camera.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.17-22
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• 2005

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.