• Title/Summary/Keyword: Damage threshold

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The analysis of the relation between noise induced hearing loss and noise exposure (소음유발 청력손실과 소음폭로에 대한 연구)

  • 장호경
    • Progress in Medical Physics
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    • v.9 no.4
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    • pp.217-225
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    • 1998
  • In this paper, the analysis of the relation between noise induced hearing loss and noise exposure is described for the A-weighted noise levels and exposure duration. The hearing loss and sensitivity threshold shift is investigated by changing the various parameters such as the effects of aging and noise exposure. Total hearing loss is proportional to a function of exposure level based upon the integral of pressure with time. If the noise exposure term is large so that the presbycusis may be neglected, the hearing loss due to aging and noise exposure becomes the noise induced hearing loss. It is shown that exposure to excessive noise can cause temporary loss of hearing that may become permanent if the exposure is prolonged or intense. An audiogram taken from a person suffering from noise induced hearing loss will usually show the greatest loss of hearing sensitivity in the 4kHz region, which is typically the region most sensitive to damage resulting from many types of industrial noise.

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Investigation on the lasing characteristics of an $Ar^+$ laser-pumped Nd:glass laser ($Ar^+$ 레이저로 펌핑되는 Nd:glass 레이저의 발진특성)

  • 이종무;강응철;남창희
    • Korean Journal of Optics and Photonics
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    • v.3 no.4
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    • pp.222-226
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    • 1992
  • The lasing characteristics of a Nd:phosphate glass laser pumped by 514 nm of an $Ar^{+}$ laser has been investigated. The oscillator consists of a Nd:glass gain medium set at Brewster angle, and two concave mirrors, and a flat mirror with a reflectance of 98%. The $Ar^{+}$ laser pumping beam is focused longitudinally at the beam waist of laser mode for efficient pumping. The pumping beam is chopped at 100 Hz to reduce the heat loading to prevent the thermal damage of the gain medium by the latent heat from the absorbed pumping beam. The maximum laser output power of 70 mW at 1.5 W pumping and the threshold input power of 520 mW have been obtained.

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The Sensitivity of the Parameters of Microcontroller Device with Coupling Caused by UWB-HPEM (Ultra Wideband-High Power Electromagnetics) (광대역 고출력 전자기 펄스에 의한 마이크로컨트롤러 소자의 매개변수들의 민감성 분석)

  • Hwang, Sun-Mook;Hong, Joo-Il;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.369-373
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    • 2010
  • Modem electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 kV. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Ma1function Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.

The Damage of Microcontroller Devices due to Coupling Effects under High Power Electromagnetic Wave by Magnetron (고출력 전자기파의 커플링 효과에 의한 마이크로 컨트롤러의 손상)

  • Hong, Joo-Il;Hwang, Sun-Mook;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.12
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    • pp.2263-2268
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    • 2008
  • We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.

Loss of strength in asbestos-cement water pipes due to leaching

  • Gil, Lluis;Perez, Marco A.;Bernat, Ernest;Cruz, Juan J.
    • Structural Engineering and Mechanics
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    • v.40 no.5
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    • pp.655-663
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    • 2011
  • Asbestos-cement is a material with valuable strength and durability. It was extensively used for water distribution pipes across the world from the 1950s until the early 1980s. The network of pipes in this case study dates from the 1970s, and after more than 30 to 40 years of service, some pipes have been found to break under common service pressure with no apparent reason. A set of mechanical tests was performed including bending, compression, pressure and crushing tests. Microscopy analysis was also used to understand the material behaviour. Tests showed that there was a clear loss of strength in the pipes and that the safety factor was under the established threshold in most of the specimens. Microscopy results showed morphological damage to the pipes. The loss of strength was attributed to a leaching effect. Leaching damages the cement matrix and reduces the frictional interfacial shear stress.

Highly stable amorphous indium.gallium.zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure

  • Mativenga, M.;Choi, J.W.;Hur, J.H.;Kim, H.J.;Jang, Jin
    • Journal of Information Display
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    • v.12 no.1
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    • pp.47-50
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    • 2011
  • Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

Interface State Control of Amorphous InGaZnO Thin Film Transistor by Surface Treatment of Gate Insulator (게이트 절연막의 표면처리에 의한 비정질 인듐갈륨징크옥사이드 박막트랜지스터의 계면 상태 조절)

  • Kim, Bo-Sul;Kim, Do-Hyung;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.693-696
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    • 2011
  • Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

An Experimental Study on the Galling Characteristics of valve Seat Materials for Water Works (밸브시트 재료의 갤링 특성에 관한 실험적 연구)

  • 박성준;김영태;이상조
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.3
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    • pp.100-108
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    • 2004
  • Contamination of environment induces the shortage of drinkables. In this trend, the leakage of water that occurs by breakage or erosion of rubber valve seats is serious problem. Rubber is apt to cause breakage between two materials when they contact with each other. The possible way to avoid leakage of water by damage and breakdown of rubber is to replace that with metal. Because of this reason, nowadays, rubber is being substituted with metal as valve seat materials for water works. In tribology, a severe from of wear is characterized by local, macroscopic material transfer, removal, or formation of surface protrusions when two solid surfaces experience relative sliding under load. One of the major problems in sliding of metals is galling due to bad surface quality. Experimentally, there are various elements which influence on incipient galling, such as hardness, surface roughness, temperature, load, velocity and external environments. This paper is aimed at verifying the galling tendencies according to hardness, surface roughness, load and velocity and showing how much effect the factors have on the galling tendencies.

Population characteristics of the bivalve Ruditapes philippinarum from Cheju Island coasts, Korea

  • Silina, A.V.
    • The Korean Journal of Malacology
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    • v.26 no.3
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    • pp.227-234
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    • 2010
  • A comparative analysis of size and age structures of coastal subfossil shell assemblages of the shortnecked clam Ruditapes philippinarum from open and protected bays of Cheju Island (Korea) was carried out. On the whole, taking into account the damage of small fragile shells, size and age structures of the shell assemblages corresponded to the classical curve of bivalve population distribution when its mortality diminishes with age increase up to a certain threshold. It was found that shell samples from open bays of the western, southern and eastern coasts included shells of smaller and younger individuals (L ${\leq}$ 40 mm, ${\leq}$ 4 years) than samples from the eastern protected bay (L ${\leq}$ 54.5 mm, ${\leq}$ 6 years). Evidently, strong wave activity was the reason for a short life-span of the clams from the open areas. Growth was investigated retrospectively by annual growth rings on the shells. Growth rates of the clams from the various coasts of Cheju Island differed. However, growth rates of the clams from different biotopes at the same (eastern) side of the Island were similar. Shell height/length and width/length ratios statistically significantly increased with the clam age increase. Most likely, the reason for such shell shape alteration is that more conglobated individuals more survive being more energy-optimal than oblong specimens.

Cochlear Implantation via the Transmeatal Approach in an Adolescent with Hunter Syndrome-Type II Mucopolysaccharidosis

  • Kim, Hantai;An, Jun Young;Choo, Oak-Sung;Jang, Jeong Hun;Park, Hun Yi;Choung, Yun-Hoon
    • Korean Journal of Audiology
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    • v.25 no.1
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    • pp.49-54
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    • 2021
  • Type II mucopolysaccharidosis (MPS II) commonly known as Hunter syndrome, is a rare X-linked lysosomal storage disorder caused by iduronate-2-sulfatase deficiency, which in turn causes otorhinolaryngological manifestations, including sensorineural hearing loss (SNHL). Previously, the median survival age of patients with MPS was approximately 13.4 years. However, in the era of enzyme replacement therapy and other multidisciplinary care modalities, the life expectancy has increased. Herein, we report a rare case of an adolescent with MPS II who underwent SNHL treatment with cochlear implantation (CI). Based on unexpected findings of mastoid emissary veins and overgrowth of the vessels around the temporal bone, CI was performed using the transmeatal approach instead of the conventional transmastoid method, to avoid damage to the vessels. The average hearing threshold after CI was 35 dB and no surgical complications were encountered. Adolescent MPS II may present vessel abnormalities, which can reduce the success rate of surgery. In patients with MPS II with SNHL, CI should be performed under careful monitoring of vessel overgrowth. Moreover, with regard to feasibility of CI in adolescent patients with MPS II with SNHL, surgical techniques such as the transmeatal approach should be selected based on adequate assessment of the case.