• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.215-215
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• 2003

현재 이용되고 있는 위상 변위 마스크, 즉 Cr 계열의 마스크나 MoSiON 마스크는 DUV지역에서 낮은 굴절률을 갖는다. 그 겯과 마스크의 두께가 90 nm 이상이 되고, 웨이퍼에서 패턴 형성 시 에러율이 증가하게 된다. 본 연구에서는 DUV 지역에서 굴절률이 높을 것이라고 예상되는 Zr과 Hf의 oxide를 위상 변위 마스크 물질의 선정하고 각 물질의 전자 상태와 천이 상태를 분석하여 위상변위 마스크로써의 이용가능성을 연구하자 한다. 상온에서 Zr, Hf oxide의 안정한 구조는 cubic 구조와 monoclinic 구조이다. 현재 cubic 구조의 Zr, Hf oxide에 대한 전자 상태는 연구가 많이 되어 있는 반면 monoclinic 구조에서의 전자상태 연구는 미흡하다. 본 연구에서는 monoclinic 구조를 이용하여 Zr, Hf oxide의 클러스터 모델을 제작하였다. 제작된 클러스터 모델에 대하여 DV-X$\alpha$ 계산법을 적용, 기저상태의 전자상태를 계산하였다. 그리고 각 모델에서 Zr L-edge, Hf L-edge 그리고 O K-edge의 천이상태를 연구하여, 기저 상태의 전자상태와 천이상태를 연구하여 광학 성질과의 연관성을 연구하고자 하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.40-40
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• 1996

• Current Optics and Photonics
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• v.2 no.4
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• pp.361-367
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• 2018

Ultrafast deep-ultraviolet (DUV) pulse generation from the subwavelength aperture of a plasmonic waveguide was investigated. The plasmonic nanofocusing of near-infrared (NIR) pulses was exploited to enhance DUV photoemission of surface third harmonic generation (STHG) at the amorphous $SiO_2$ dielectric. The generated DUV pulses which are successfully made from a nano-aperture using 10 fs NIR pulses have a spectral bandwidth of 13 nm at a carrier wavelength of 266 nm. This method is applicable for tip-based ultrafast UV laser spectroscopy of nanostructures or biomolecules

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.10-15
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• 2012

In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.

• The Optical Journal
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• v.14 no.3 s.79
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• pp.51-53
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• 2002

2002년 초에 Dataquest에 의해 발표된 시장전망에 의하면, 2003년 이후 3$~$4년간 엑시머 레이저를 이용한 DUV 노광장비 시장은 큰 폭으로 확대될 것으로 전망하고 있으며, DRAM 수요의 증가와 12인치(300mm) 공정의 가속화가 그 예상을 뒷받침 하고 있다. 특히, KrF엑시머 레이저 공정 이후에 도입될 ArF엑시머 레이저 시장의 확대가 주목된다.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.373-380
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• 1993

A five mirror system with a reduction magnification(M=+1/5) is designed for DUV optical lithography. Initially, numerical solutions of all zero 3rd order aberrations and zero 5th order spherical aberration are obtained for the spherical mirror system. Next, by the optimization method, the aspherization is carried out to the two spherical mirrors to obtain a system that has as less residual aberrations, higher NA and improved MTF as possible. We have finally obtained the system of which NA is 0.45 and the resolution is about 500 cycles/mm at the 50% MTF value criterion and the depth of focus of $1.0{\mu}m$ for the nearly incoherent illumination$({\sigma}=1.0)$ and the wavelength of 0.248 m(KrF excimer laser line).

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.1-8
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• 1994

A five mirror system with a reduction magnification(M=+1/5) is designed for DUV optical lithography. First, for spherical mirror systems, the numerical solutions of all zero 3rd order aberrations are derived and the 3-dimensional shape of the solution-domain is obtained. In these solutions, we select solutions which have as less residual aberrations and smaller central obscurration as possible and the aspherization is carried out to the last two spherical mirrors to obtain a system that has as higher NA as possible. Finally we obtain the system of which NA is 0.45, the central obscuration is about 25% and the resolution is about 650 cycles/mm at the 50% MTF value criterion and the depth of focus of 0.8${\mu}m$ for the nearly incoherent illumination (${\sigma}$=1.0) and the wavelength of 0.193${\mu}m$ (ArF excimer laser line).

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.157-161
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• 1993

An optical autofocus system for a DUV KrF excimer laser wafer stepper was developed by using the PSD (Position Sensitive Detector) as the position sensor. The laser beam was incident on the surface of wafer and the reflected beam was magnified optically by a lens. And the beam was directed onto the surface of PSD by a mirror system. The spatial resolution of the autofocus system was found to be $0.03{\mu}m$.