• 제목/요약/키워드: DIW(do-ionized water)

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실리카 슬러리의 희석과 연마제의 첨가가 CMP 특성에 미치는 영향 (Effects of Diluted Silica Slurry and Abrasives on the CMP Characteristics)

  • 박창준;김상용;서용진
    • 한국전기전자재료학회논문지
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    • 제15권10호
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    • pp.851-857
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    • 2002
  • CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.

패드 컨디셔닝 온도 변화가 ITO 박막의 전기적.광학적 특성에 미치는 영향 (Electrical and Optical Properties of ITO Thin Film with a Control of Temperature in Pad Conditioning Process)

  • 최권우;서용진;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.352-353
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    • 2005
  • Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

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혼합 연마제 슬러리를 이용한 Oxide CMP 특성에 관한 연구 (A Study on the Oxide CMP Characteristics of using Mixed Abrasive Slurry(MAS))

  • 이성일;박성우;이우선;서용진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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    • pp.1267-1268
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    • 2006
  • Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

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혼합 연마제 슬러리를 이용한 Oxide CMP 특성에 관한 연구 (A Study on the Oxide CMP Characteristics of using Mixed Abrasive Slurry(MAS))

  • 이성일;박성우;이우선;서용진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1727-1728
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    • 2006
  • Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

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