• KIPS Transactions on Computer and Communication Systems
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• v.10 no.7
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• pp.199-204
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• 2021

Digital substation refers to a substation that digitizes functions and communication methods of power facilities such as monitoring, measuring, control, protection, and operation based on IEC 61850, an international standard for the purpose of intelligent power grids. Based on the intelligent operating system, efficient monitoring and control of power facilities is possible, and automatic recovery function and remote control are possible in the event of an accident, enabling rapid power failure recovery. With the development of digital technology and the expansion of the introduction of eco-friendly renewable energy and electric vehicles, the spread of direct current distribution systems is expected to expand. MVDC is a system that utilizes direct current lines with voltage levels and transmission capacities between HVDCs applied to conventional transmission systems and LVDCs from consumers. Converting existing lines in substations, where most power equipment is alternating current centric, to direct current lines will reduce transmission losses and ensure greater current capacity. The process bus of a digital substation is a communication network consisting of communication equipment such as Ethernet switches that connect installed devices between bay level and process level. For MVDC linkage to existing digital substations, the process level was divided into two buses: AC and DC, and a system that can be comprehensively managed in conjunction with diagnostic IEDs as well as surveillance and control was proposed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.25-34
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• 2019

Recently, when a fault occurs at a long-distance point in a LVDC (low voltage direct current) distribution feeder in a light rail system, the magnitude of the current can decrease to less than that of the load current of a light rail system. Therefore, proper protection coordination method to distinguish a fault current from a load current is required. To overcome these problems, this paper proposes an optimal algorithm of protection devices for a LVDC distribution feeder in a light rail system. In other words, based on the characteristics of the fault current for ground resistance and fault location, this paper proposes an optimal operation algorithm of a selective relay to properly identify the fault current compared to the load current in a light rail system. In addition, this paper modelled the distribution system including AC/DC converter using a PSCAD/EMTDC S/W and from the simulation results for a real light rail system, the proposed algorithm was found to be a useful and practical tool to correctly identify the fault current and load current.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.