• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.65-73
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• 2003

This paper presents the implementation of an analog signal-processing ASIS to detect an angular velocity signal from a vibrator angular velocity detection sensor. The output of the sensor to be charge appeared as the variation of the capacitance value in the structure of the sensor was detected using charge amplifiers and a self oscillation circuit for driving the sensor was implemented with a sinusoidal self oscillation circuit using the resonance characteristics of the sensor. Specially an automatic gain control circuit was utilized to prevent the deterioration of self-oscillation characteristics due to the external elements such as the characteristic variation of the sensor process and the temperature variation. The angular velocity signal, amplitude-mod)Hated in the operation characteristics of the sensor, was demodulated using a synchronous detection circuit. A switching multiplication circuit was used in the synchronous detection circuit to prevent the magnitude variation of detected signal caused by the amplitude variation of the carrier signal. The ASIC was designed and implemented using 0.5${\mu}{\textrm}{m}$ CMOS process. The chip size was 1.2mm x 1mm. In the experiment under the supply voltage of 3V, the ASIC consumed the supply current of 3.6mA and noise spectrum density from dc to 50Hz was in the range of -95 dBrms/√Hz and -100 dBrms/√Hz when the ASIC, coupled with the sensor, was in normal operation.