• Title/Summary/Keyword: DC voltage ripple

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Improved instantaneous Following Control Function for High Power Factor PWM Matrix Converter (고역율 PWM 매트릭스 컨버터의 개선된 순시추종 제어함수)

  • Kim, Kwang-Tae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.3
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    • pp.35-43
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    • 2005
  • Matrix converters have been studied for eliminating dc link of conventional converter-inverter system, and various undulation strategy have been proposed. Therefore, matrix converter have no energy storage component except for small ac later for the elimination of switching ripple, and can be made compact and highly reliable compare with the do link inverter system. Matrix converter, however, directly connected the input and the output terminals by bidirectional static switch. As a result if the input voltage are asymmetrical, and contain harmonics, the influence of the distortions directly appear on the output terminal. This problem is a major obstacle to the matrix converter. A new control method using average comparison strategy have been proposed in this paper. This control method realizes sinusoidal input and output current unity input displacement factor regardless of load power factor. Moreover, compensation of the asymmetrical and/or harmonic containing input voltage is automatically realized, and calculation time of control function is reduced.

Modeling and Direct Power Control Method of Vienna Rectifiers Using the Sliding Mode Control Approach

  • Ma, Hui;Xie, Yunxiang;Sun, Biaoguang;Mo, Lingjun
    • Journal of Power Electronics
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    • v.15 no.1
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    • pp.190-201
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    • 2015
  • This paper uses the switching function approach to present a simple state model of the Vienna-type rectifier. The approach introduces the relationship between the DC-link neutral point voltage and the AC side phase currents. A novel direct power control (DPC) strategy, which is based on the sliding mode control (SMC) for Vienna I rectifiers, is developed using the proposed power model in the stationary ${\alpha}-{\beta}$ reference frames. The SMC-based DPC methodology directly regulates instantaneous active and reactive powers without transforming to a synchronous rotating coordinate reference frame or a tracking phase angle of grid voltage. Moreover, the required rectifier control voltages are directly calculated by utilizing the non-linear SMC scheme. Theoretically, active and reactive power flows are controlled without ripple or cross coupling. Furthermore, the fixed-switching frequency is obtained by employing the simplified space vector modulation (SVM). SVM solves the complicated designing problem of the AC harmonic filter. The simplified SVM is based on the simplification of the space vector diagram of a three-level converter into that of a two-level converter. The dwelling time calculation and switching sequence selection are easily implemented like those in the conventional two-level rectifier. Replacing the current control loops with power control loops simplifies the system design and enhances the transient performance. The simulation models in MATLAB/Simulink and the digital signal processor-controlled 1.5 kW Vienna-type rectifier are used to verify the fast responses and robustness of the proposed control scheme.

Linearity Enhancement of Partially Doped Channel GaAs-based Double Heterostructure Power FETs (부분 채널도핑된 GaAs계 이중이종접합 전력FET의 선형성 증가)

  • Kim, U-Seok;Kim, Sang-Seop;Jeong, Yun-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.83-88
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    • 2002
  • To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.