• Korean Journal of Materials Research
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• v.11 no.6
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• pp.492-497
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• 2001

We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.10 s.89
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• pp.1011-1017
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• 2004

Ultra Wideband(UWB) technologies have been developed to exploit a new spectrum resource in substances and to realize ultra-high-speed communication, high precision geolocation, and other applications. The energy of UWB signal is extremely spread from near DC to a few GHz. This means that the interference between conventional narrowband systems and UWB systems is inevitable. However, the interference effects had not previously been studied from UWB wireless systems to conventional mobile wireless systems sharing the frequency bands such as Korean Cellular CDMA and WCDMA. This paper experimentally evaluates the interference from two kinds of UWB sources, namely a direct-sequence spread-spectrum CDMA(DS-CDMA) UWB source and an impulse radio UWB source, to a Cellular CDMA and WCDMA digital transmission system. The average frame error rate degradation of each system are presented. From these experimental results, the interference effects of DS-CDMA UWB source is not severe compared to the Impulse UWB.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.3
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• pp.74-83
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• 2002

The maximun short circuit current of modern power system is becoming so large that circuit breaker is not expected to be able to shut down the current in the future In order cut over-currents, a system composed of a superconducting fault current limiter(SFCL) and traditional breaker seems to provide a promising solution for furture power operation. In present paper, three line-to-ground fault is assumed to happen at the center of 345kV transmission lines in a large capacity electric power system. The superconducting fault current limiter was represented using a commutation type, which consists of a non-inductive superconducting coil and current limiting element (resistor or reactor). from the viewpoint of current limiting performance, the prevention of the voltage drop at the load bus and comparision characteristics for two type SFCL. Desired design specification and operation parameters of SECL were also given qualitatively by the performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.277-277
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• 2010

The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Tribology and Lubricants
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• v.35 no.1
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• pp.1-8
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• 2019

Demand for plastic gears are increasing in many industries due to their low production cost, light weight, applicability without lubricant, corrosion resistance and high resilience. Despite these benefits, utilizing plastic gears is limited due to their poor material properties. In this work, DLC coating was applied to improve the tribological properties of polyamide66 gear. 0 V, 40 V, and 70 V of negative bias voltages were selected as a deposition parameter in DC magnetron sputtering system. Pin-on-disk experiment was performed in order to investigate the wear characteristics of the gears. The results of the pin-on-disk experiment showed that DLC coated polyamide66 with 40 V of negative bias voltage had the lowest friction coefficient value (0.134) and DLC coated PA66 with 0 V of negative bias voltage showed the best wear resistance ($9.83{\times}10^{-10}mm^3/N{\cdot}mm$) among all the specimens. Based on these results, durability tests were conducted for DLC coated polyamide66 gears with 0 V of negative bias voltage. The tests showed that the temperature of the uncoated polyamide66 gear increased to about $37^{\circ}C$ while the DLC coated gear saturated at about $25^{\circ}C$. Also, the power transmission efficiency of the DLC coated gear increased by about 6% compared to those without coating. Weight loss of the polyamide66 gears were reduced by about 73%.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.71-76
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• 2017

The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2017.04a
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• pp.71-71
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• 2017

농용트랙터의 운전자는 작업, 주행으로 인한 유해한 저주파 진동에 장시간 노출된다. 이에 따라 운전자에게 전달되는 노면 진동을 감소시켜주기 위한 전방차축 현가장치의 역할이 커지고 있다. 트랙터의 전방차축 현가장치는 주로 유압식으로 설계되어 있으며 이를 구성하는 유압요소 선정이 현가장치의 성능에 중요한 영향을 미친다. 하지만, 실제와 유사한 조건에서 트랙터 차체 무게만큼 큰 부하를 제공하여 유압회로의 성능을 실험하는 것은 비용과 시간 측면에서 비효율적이다. 본 연구에서는 이를 대체하기 위하여 개별 유압요소의 성능을 테스트 할 수 있는 현가장치 유압회로 요인 시험기를 설계제작 하였다. 이를 이용하여 개별 부품의 성능곡선을 센서를 이용 측정하였고 얻은 특성값을, 구성한 유압 시뮬레이션 모델에 반영하여 실제조건의 유압특성을 얻을 수 있는 유효한 시뮬레이션 모델 개발에 활용하였다. 또한, 실험실 환경에서 유압식 현가장치를 간소화 시킨 형태로 유압회로의 성능을 예비시험해 볼 수 있도록 다양한 센서를 장착 데이터를 취득할 수 있도록 하였다. 개발한 요인 시험기는 하부에 설치된 가진 실린더를 이용하여 상부에 설치된 현가장치 실린더의 스트로크 변위와 속도에 따른 힘을 측정할 수 있도록 구성하였다. 이를 위해 현가장치 실린더의 헤드부와 로드부에 각각 압력센서를 설치하였으며 헤드부, 로드부의 압력 차이와 로드셀을 이용해 측정한 가진 실린더의 힘의 관계를 확인하였다. 상부의 현가 실린더 장치는 복동 형태로 제작되어 헤드부, 로드부 양쪽 방향으로 유량이 흐를 수 있도록 설계되었다. 이를 이용해 헤드부와 로드부 사이에 어큐뮬레이터, 가변 오리피스, 릴리프 밸브 등으로 유압회로를 구성하였으며 어큐뮬레이터 용량에 따른 힘의 변화, 가변 오리피스의 개도량에 따라서 전달되는 힘의 크기 등을 측정하였다. 하부의 가진 실린더는 사인파, 삼각파, 계단 입력, DC 레벨 등의 신호를 발생시킬 수 있도록 제작되었다. 신호의 주파수는 0~4Hz, 범위에서 사용자가 조절할 수 있도록 설정되었으며 계단응답 성능 측정 시험을 평가한 결과 정상상태오차는 0.470mm~0.536mm, 입상시간은 0.194초~0.202초, 정착시간은 0.230초~0.421초로 나타났다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.