• Macromolecular Research
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• v.17 no.8
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• pp.609-615
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• 2009

Two types of nano composite were obtained by in situ chemical method in polyaniline (PANI)/dodecyl-benzenesulfonic acid (DBSA) system depending on the use of either ammonium persulfate (APS) or ferric chloride ($FeCl_3$) as the oxidant. In order to study the difference of the two composites in the surface characteristics, thermal stability, and electric properties, the composite films were studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), and temperature dependent DC electrical conductivity. The results revealed a large difference in the surface morphology, thermal stability, and the microstructure properties between the two composites, and these differences were considered responsible for the molecular order and conductivity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.14-23
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• 2010

This paper reports the fabrication of a DVB-T/H System in Package (SiP) that is able to receive and process the DVB-T/H signal. The DVB-T/H is the European telecommunication standard for Digital Video Broadcasting (DVB). An IC-embedded Printed Circuit Board (PCB) process, interpose a chip between PCB layers, has applied to the DVB-T/H SiP. The chip inserted in DVB-T/H SiP is the System on Chip (SoC) for mobile TV. It is comprised of a RF block for DVB-T/H RF signal and a digital block to convert received signal to digital signal for an application processor. To operate the DVB-T/H IC, a 3MHz DC-DC converter and LDO are on the DVB-T/H SiP. And a 38.4MHz crystal is used as a clock source. The fabricated DVB-T/H SiP form 4 layers which size is $8mm{\times}8mm$. The DVB-T/H IC is located between 2nd and 3rd layer. According to the result of simulation, the RF signal sensitivity is improved since the layout modification of the ground plane and via. And we confirmed the adjustment of LC value on power transmission is necessary to turn down the noise level in a SiP. Although the size of a DVB-T/H SiP is decreased over 70% than reference module, the power consumption and efficiency is on a par with reference module. The average power consumption is 297mW and the efficiency is 87%. But, the RF signal sensitivity is declined by average 3.8dB. This is caused by the decrease of the RF signal sensitivity which is 2.8dB, because of the noise from the DC-DC converter.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.39-47
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• 1998

A fourth-order $\Sigma$-$\Delta$ modulator is designed and implemented in 0.6 $\mu\textrm{m}$ CMOS technology. The modulator is verified by introducing nonlinear factors such as DC gain and slew rate in system model that determines the transfer function in S-domain and in time-domain. Dynamic range is more than 110 dB and the peak SM is 102.6 dB at a clock rate of 2.8224 MHz for voiceband signal. The structure of a ∑-$\Delta$ modulator is a modified fourth-order ∑-$\Delta$ modulator using direct feedback loop method, which improves performance and consumes less power. The transmission zero for noise is located in the first-second integrator loop, which reduces entire size of capacitors, reduces the active area of the chip, improves the performance, and reduces power dissipation. The system is stable because the output variation with respect to unit time is small compared with that of the third integrator. It is easy to implement because the size of the capacitor in the first integrator, and the size of the third integrator is small because we use the noise reduction technique. This paper represents a new design method by modeling that conceptually decides transfer function in S-domain and in Z-domain, determines the cutoff frequency of signal, maximizes signal power in each integrator, and decides optimal transmission-zero frequency for noise. The active area of the prototype chip is 5.25$\textrm{mm}^2$, and it dissipates 10 mW of power from a 5V supply.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.20-23
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• 2002

The local coercivity distribution of CoCrPt alloy films prepared by dc magnetron sputtering has been investigated by means of a magneto-optical microscope magnetometer (MOMM) capable of simultaneously measuring the local properties on 400 nm spatial resolutions. Serial samples of CoCrPt alloy films were prepared with the Pt composition of a range from 6 to 28 at. %. We find that the local coercivity distribution crosses over from Gaussian to non-Gaussian distribution in CoCrPt alloy films with increasing Pt composition, with increasing trends in the width of the distribution as well as the average local coercivity. Transmission electron microscopy (TEM) studies reveal that our findings are closely correlated with the dependences of the grain size distribution and its average size on Pt concentration.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.4
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• pp.491-497
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• 2015

In this paper a method of design and Implementation of RFID based control system for reducing standby power consumption at the power outlet is described. The system is composed of a RF controlled power outlet having relay and an active RFID tag communicating with the RF reader module controlling the relay. When the tag carried by human approaches to the RF reader the reader recognizes the tag and switch off the relay based on the RSSI level measurement. A low power packet prediction algorithm has been used to decrease the DC power consumption at both the tag and the RF reader. The result of experiment shows that successful operation of the relay control has been obtained while low power operation of the tag and the reader is achieved using above algorithm. Also setting the distance between the reader and the tag by controlling transmission power of the tag and adjusting the duty cycle of the packet waiting time when the reader is in idle state allows us to reduce DC power consumption at both the reader and the tag.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.2-60.2
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• 2011

본 연구에서는 Indium-free 및 gallium-free 기반의 산화물 TFT를 제작하기 위해 n-type $TiO_2$ 반도체 기반의 thin film transistor ($Mo/TiO_{2-x}/SiO_2/p+\;+Si$)를 oxygen deficient black $TiO_{2-x}$ 타겟을 이용하여 DC magnetron sputtering 공법으로 제작하고 그 특성을 분석하였다. DC magnetron sputtering 공법으로 성막된 $TiO_{2-x}$ semiconductor의 전기적, 광학적, 화학적 결합 에너지 및 구조적 특성 분석을 위해 semiconductor parameter analyzer (Aglient 4156-C), UV/Vis spectrometer, X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy를 각각 이용하여 분석하였으며 이를 RTA 전/후 특성 비교를 통하여 관찰하였다. $TiO_{2-x}$ TFT의 소자 특성은 RTA 열처리 전/후 전형적인 insulator 특성에서 semiconductor 특성으로 변화되는 것을 관찰할 수 있었으며, 최적화된 열처리 공정에서 filed effect mobility 0.69 $cm^2$/Vs, on to off current ratio $2.04{\times}10^7$, sub-threshold swing 2.45 V/decade와 Vth 10.45 V를 확보할 수 있었다. 또한 RTA 열처리 후 밴드갭이 3.25에서 3.41로 확장되는 특성을 나타내었다. 특히 RTA 열처리 후 stoichiometric $TiO_2$ 상태와는 다른 $Ti^{2+}$, $Ti^{3+}$, $Ti^{4+}$ 등의 다양한 oxidation states가 관찰되었으며 이러한 oxidation states를 $TiO_{2-x}$ 박막에서의 oxygen deficient 상태와 연관시킴으로써 oxygen vacancy의 n-type dopant로의 거동을 확인하였다. $TiO_2$ 채널 기반의 TFT 특성을 통하여서 indium free 또는 gallium free 산화물 채널로써의 가능성을 확인하였다.