• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.223-223
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• 2010

본 연구에서는 Al-doped ZnO (AZO) 박막을 linear facing target sputter (LFTS) 시스템을 이용하여 성막 하였고 박막의 특성을 분석하였다. LFTS 시스템은 마주보는 두 AZO 타겟 사이에 고밀도의 플라즈마를 구속시켜 플라즈마 데미지 없이 산화물 박막을 성막 시킬 수 있는 장치이다. LFTS로 성막된 AZO 박막의 인가된 DC 파워에 따른 전기적 특성을 분석하기 위해 four-point probe와 Hall measurement 장비를 이용하여 분석을 진행 하였으며, 광학적 특성 분석을 위해 UV/Vis spectrometer 장비를 이용하여 분석하였다. AZO 박막의 구조적, 표면적 특성을 분석하기 위해 X-ray diffraction(XRD) 및 scanning electron microscope(SEM)을 사용하여 상온에서 성막된 AZO 박막의 특성을 관찰 하였다. 또한 AZO 박막의 PET 기판과의 접합성 및 구부림 시의 안정성을 평가하기 위해 bending test를 진행 하였다. 최적화된 AZO 박막으로부터 기판에 성막 중 열처리공정이나 후 열처리 공정의 진행 없이 35 ohm/square의 낮은 면저항과 약 80 % 이상의 투과율을 얻을 수 있었다. LFTS 시스템을 이용하여 낮은 공정온도에서 AZO 박막을 성막 하였음에도 불구하고 낮은 저항과 높은 투과도 특성을 나타내고 있어 기존의 투명 박막을 대체 할 수 있는 가능성을 제시하였다

• 한국표면공학회지
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• 제37권5호
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• pp.243-248
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• 2004

A palladium-nikel(Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support formed with nickel powder. Plasma surface treatment process is introduced as pre-treatment process instead of HCI activation. Pd coating layer was prepared by dc magnetron sputtering deposition after $H_2$ plasma surface treatment. Palladium-nickel alloy composite layer had a fairly uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature of 773 K and pressure of 2.2psi. The hydrogen permeance was 6 ml/minㆍ$\textrm{cm}^2$ㆍatm and the selectivity was 120 for hydrogen/nitrogen($H_2$/$N_2$) mixing gases at 773 K.

• 한국표면공학회지
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• 제29권3호
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국세라믹학회지
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• 제41권6호
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• pp.476-480
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• 2004

펄스 do 마그네트론 스퍼터링법에 의해 유리 기판 위에 AZO(Al-doped ZnO) 박막을 제조하여 박막의 구조적, 전기적 및 광학적 특성을 조사하였다. 본 연구를 위해 l.0 at% Al이 도핑 된 ZnO세라믹 타켓을 사용하였다. XRD 분석을 통하여 30KHz의 펄스 주파수가 인가되었을 때 c축 배향성이 가장 우수하게 나타났고, 표면 형상 분석을 통하여 매우 치밀한 박막이 성장되었음을 알 수 있었다. 증착율은 펄스 주파수가 증가함에 따라 선형적으로 감소하였고, 30KHz의 펼스 주파수가 인가되었을 때 비저항은 8.67${\times}$$10^{-4}$ $\Omega$-cm의 가장 낮은 비저항을 나타내었으며, UV-vis. 투과율 측정결과, 평균 85% 이상의 높은 투과도를 나타내었다. 이러한 낮은 비저항 및 높은 광 투과도로 볼 때 AZO 박막은 투명 전도성 산화물 박막으로의 응용 가능성을 나타내었다.

• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.207-212
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• 2005

Al, Ti, Ta 및 Cr 박막을 DC 마그네트론 스퍼터링방법으로 0 - 800 W의 RF 바이어스로 폴리이미드 기판에 가하면서 증착한 후 금속박막의 접착성을 연구하였다. 접착력은 $90^{\circ}$ 필 테스트로 평가하였다. 필 테스트 결과 모든 시편에서 기판에 RF 바이어스를 가하면 접착력이 향상되었다. RF바이어스를 가한 시편은 필링 도중 계면근처의 폴리이미드 내에서 파괴가 일어나면서 소성변형이 심하게 발생하였다. 단면 투과전자현미경 관찰에 의하면 금속/폴리이미드 계면은 분명하지 않고 복잡한 형상을 띄고 있었다. 이런 복잡한 계면은 RF 바이어스의 영향으로 생겼으며 접착력 향상의 주요 요인이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• 한국재료학회지
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• 제23권6호
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.52.2-52.2
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• 2011

본 연구의 목적은 CIGS 태양전지의 두 가지 TCO층 중 AZO를 제외한 intrinsic ZnO의 전자빔 처리 영향에 대한 특성 분석을 하고자 함이다. 또한 추후 CIGS 태양전지를 제조하여 적용 시 전자빔 처리 전후의 특성이 어떻게 변하는지를 알아보기 위한 사전 실험이다. Intrinsic ZnO는 RF magnetron sputter 를 이용하여 약 100nm의 두께로 증착 하였다. 이때 공정 압력을 변수로 RF power는 80W로 설정 하였으며 Ar 분압은 10mtorr, 5mtorr, 1mtorr로 각각 달리 하며 증착 하였다. 이후 전자빔 처리를 위해 각각의 시편에 Argon flow 7sccm 상태에서 DC power 3kW, RF power 300W의 세기로 전자빔 처리를 실시 하였다. 전자빔 처리에 따른 전기적, 구조적 특성을 분석하기위해 Hall measurement와 SEM, XRD, UV-vis spectroscopy을 사용하였다. 먼저 Hall measurement 측정을 통한 전기적 분석 결과 비저항이 무한대에서 약 $40m{\Omega}{\cdot}cm$로 감소된 결과를 도출 할 수 있었으며, $2{\sim}3.4{\times}10^{18}/cm^3$ 이상의 carrier density 가 측정 되었다. UV-vis spectroscopy를 이용한 투과도 측정결과 모든 시편에서 Band gap이 감소하는 결과를 보였다. SEM, XRD를 이용한 분석결과 결정성 및 grain의 크기가 증가하는 결과를 얻을 수 있었다.

• 한국재료학회지
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• 제18권10호
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.