• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1375-1377
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, in which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%) $N_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition($300^{\circ}C$, 3 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}{\Omega}$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4$\sim$20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS..

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.247-247
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• 2008

In this work, VOx thin films have been deposited by DC magnetron sputtering method on glass substrate using argon and oxygen gases. We examined the effects of the post annealing temperature on the structural, optical, and electrical variations of VOx films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using RTA equipment in air ambient. The thickness of the film and interface between film and substrate were observed by field emission scanning electron microscopy (FESEM). To analysis the structural properties of VOx with various annealng temperatures, we used XRD method. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.4
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• pp.667-674
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• 2004

This thesis is about the Impressed Current Cathodic Protection (ICCP) control and monitoring system. which brings protection against the corrosion of the ship's hull in the sea environments. The ICCP system is composed of a power supply. anode. reference electrode and controller. AC sources from the ship's generator are converted to DC sources in terms of power supply, and a protection current is sent to ship's hull though anode. The controller fully senses whether or not the detected potential is within a range of protection of ship's hull and then it is automatically controlled to increase or decrease the amount of protective current to be sent to the anode. The monitoring system with RS 232/485 communication is also studied in order to check the normal state of the system at a long period. because an operator does not always watch over this system and thus the system cannot operate well because of his or her negligent management. Since the vessel always navigates in the sea. an characteristics experiment of the ICCP system is conducted by introducing various corrosive environmental factors such as velocity, resistivity, dissolved oxygen, PH, temperature and contamination degree. These results must be referred to when the ICCP system is set up. In short. the ICCP is a multi-system for use on ships and on land structures because it includes a safety device. It is suggested that this system can accomodate a ship's automation and will be very useful.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.2-111.2
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• 2012

정보 기술 시대에 맞춰 광전소자의 연구가 활발해지면서 투명전극으로 사용될 수 있는 Transparent Conductive Oxide (TCO) 재료에 대한 관심이 높아지고 있다. 하지만 TCO의 대표적인 물질인 Indium Tin Oxide (ITO)의 경우 In의 가격 상승으로 인해 최근에는 낮은 전도도와 높은 투과도를 가질 수 있는 대체 물질에 대한 연구가 활발히 진행되고 있다. 그 중에서 3.2 eV 의 높은 밴드갭을 갖는 ZnO 는 가시광선 영역에서 높은 투과율을 나타낼 뿐만 아니라 Al, Ga을 도핑함으로써 낮은 전도도를 가질 수 있다. 이러한 TCO 재료는 surface texturing을 통하여 optical region 에서 반사를 억제 시킴으로서 빛을 모으는 역할을 하여 태양전지의 효율을 향상 시킬 수 있기 때문에 PV (Photovoltaics) Cell의 anti-reflective coating에 적용 할 수 있다. 본 연구에서는 pulsed DC magnetron sputtering을 이용하여 Ga-doped ZnO (GZO) 박막을 증착하였고, HCl 0.5 wt %로 wet etching을 통하여 surface texturing을 진행하였다. 결정성은 X-ray diffractometer (XRD)로 분석하였으며, 표면 형상은 Scanning Electron Microscope (SEM)을 통해 확인하였다. Van der Pauw 방법을 통해 resistivity, carrier concentration, hall mobility 등의 전기적 특성을 분석하였고 UV-Vis spectrophotometer 를 통해 투과도 및 반사도를 측정하였다.